IP Library Granted Patent US 12688874
Granted Patent B2
US 12688874 · App. 19/077,742 · Granted Jul 21, 2026

Ferroelectric data storage reader

Inventors: Peter Jeremy Czoschke (Bloomington, MN); Ali Ghoreyshi (Minneapolis, MN)
Assignee: Seagate Technology LLC
G11B9/02G11B2220/23
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Quick Facts
Patent No.
US 12688874
App. No.
19/077,742
Granted
Jul 21, 2026
Kind
B2
Abstract

Provided are devices and methods for reading data from rotating ferroelectric data storage media using a reader that includes a channel region disposed between a source and a drain. The data bits, stored as dipoles in the ferroelectric media, induce a current flowing through the channel region of the reader from the source to the drain when a bias voltage is applied to the media. The bias voltage can be tuned for desired reader operation, such as enhancing the signal or operating within a linear response regime.

Claims (28)

1 . A data storage device comprising:

rotating media having a ferroelectric layer configured to store bits in first and second dipole states; and

a reader adjacent to the rotating media, the reader comprising a source, a drain, and a channel configured to detect the dipole states stored in the ferroelectric layer based on current flowing through the channel between the source and drain when a bias voltage is applied to the rotating media, the reader being configured to provide a substantially linear signal response between a first signal threshold for detecting the first dipole state and a second signal threshold for detecting a second dipole state.

2 . The data storage device of claim 1 , wherein the first dipole state induces current in the reader above a first threshold voltage, the second dipole state induces current in the reader above a second threshold voltage, and the bias voltage is selected to be between the first threshold voltage and the second threshold voltage.

3 . The data storage device of claim 2 , wherein the bias voltage is selected to be about halfway between the first threshold voltage and the second threshold voltage.

4 . The data storage device of claim 1 , wherein an air bearing separates the reader from the rotating media.

5 . The data storage device of claim 1 , wherein a surface of the reader contacts a surface of the rotating media.

6 . The data storage device of claim 1 , wherein the reader includes a flux concentrator that extends from the channel toward the rotating media.

7 . The data storage device of claim 6 , wherein the flux concentrator reduces an area over which electric field flux from the dipole states is collected.

8 . The data storage device of claim 6 , wherein the flux concentrator expands an area over which electric field flux from the dipole states is collected.

9 . The data storage device of claim 1 , wherein the reader is configured to enhance a difference in signal between detection of the first dipole state and detection of the second dipole state.

10 . A method for use with a ferroelectric data storage device that comprises a rotating media having a ferroelectric layer storing data bits in first and second dipole states, comprising the steps of:

applying a bias voltage to the rotating media;

positioning a reader adjacent to the rotating media to thereby induce a current to flow through a channel region of the reader disposed between a source and a drain; and

measuring the induced current to thereby detect the first and second dipole states, wherein the reader is configured to provide a substantially linear signal response between a first signal threshold for detecting the first dipole state and a second signal threshold for detecting a second dipole state.

11 . The method of claim 10 , wherein the bias voltage is selected to be between a first threshold voltage for inducing current flowing through the channel region based on the first dipole state and a second threshold voltage for inducing current flowing through the channel region based on the second dipole state.

12 . The method of claim 11 , wherein the bias voltage is selected to be about halfway between the first threshold voltage and the second threshold voltage.

13 . The method of claim 10 , wherein positioning the reader adjacent to the rotating media comprises floating the reader on an air bearing that separates the reader from the rotating media.

14 . The method of claim 10 , wherein positioning the reader adjacent to the rotating media comprises brining the reader into contact with the rotating media.

15 . The method of claim 10 , wherein the reader includes a flux concentrator that extends from the channel toward the rotating media, and wherein positioning the reader adjacent to the rotating media comprises positioning a surface of the flux concentrator adjacent to the rotating media.

16 . The method of claim 15 , wherein the flux concentrator reduces an area over which the reader collects electric field flux from the dipole states.

17 . The method of claim 15 , wherein the flux concentrator expands an area over which the reader collects electric field flux from the dipole states.

18 . The method of claim 10 , wherein the reader is configured to enhance a difference in signal between detection of the first dipole state and detection of the second dipole state.

19 . A data storage device comprising:

rotating media having a ferroelectric layer configured to store bits in first and second dipole states; and

a reader adjacent to the rotating media, the reader comprising a source, a drain, and a channel configured to detect the dipole states stored in the ferroelectric layer based on current flowing through the channel between the source and drain when a bias voltage is applied to the rotating media,

wherein the first dipole state induces current in the reader above a first threshold voltage, the second dipole state induces current in the reader above a second threshold voltage, and the bias voltage is selected to be between the first threshold voltage and the second threshold voltage.

20 . The data storage device of claim 19 , wherein the bias voltage is selected to be about halfway between the first threshold voltage and the second threshold voltage.