Known-failure error handling in a memory sub-system

1 . A system comprising:

a memory device; and

a processing device, operatively coupled with the memory device, the processing device to perform operations comprising:

detecting a failure exhibited by a first set of cells of the memory device;

estimating a severity of the failure;

identifying, based on the severity of the failure, a failed subset of cells of the first set of cells;

copying data from the failed subset of cells to a second set of cells of the memory device;

identifying an adjacent subset of cells of the first set of cells that are adjacent to the failed subset of cells; and

programming first dummy data to the failed subset of cells and second dummy data to the adjacent subset of cells.

2 . The system of claim 1 , wherein estimating the severity of the failure further comprises:

determining whether the failure exhibited by the first set of cells corresponds to a known-failure mode; and

initiating a verification operation based on the known-failure mode.

3 . The system of claim 2 , wherein determining whether the failure exhibited by the first set of cells corresponds to the known-failure mode further comprises:

determining whether metadata associated with the first set of cells satisfies a threshold condition of one or more known-failure identifiers of the known-failure mode.

4 . The system of claim 1 , wherein the failure is caused by a physical defect of the failed subset of cells.

5 . The system of claim 1 , wherein estimating the severity of the failure further comprises:

responsive to determining that a voltage distribution of a set of voltage distributions for the first set of cells has shifted, determining a voltage shift of the voltage distribution; and

adjusting an estimate of the severity of the failure based on the voltage shift.

6 . The system of claim 1 , the operations further comprising:

identifying the first set of cells as a partially failed set of cells.

7 . The system of claim 1 , the operations further comprising:

precluding the first set of cells from being used by a memory write operation.

8 . A method comprising:

detecting, by a processing device, a failure exhibited by a first set of cells of a memory device;

estimating a severity of the failure;

identifying, based on the severity of the failure, a failed subset of cells of the first set of cells;

copying data from the failed subset of cells to a second set of cells of the memory device;

identifying an adjacent subset of cells of the first set of cells that are adjacent to the failed subset of cells; and

programming first dummy data to the failed subset of cells and second dummy data to the adjacent subset of cells.

9 . The method of claim 8 , wherein estimating the severity of the failure further comprises:

determining whether the failure exhibited by the first set of cells corresponds to a known-failure mode; and

initiating a verification operation based on the known-failure mode.

10 . The method of claim 9 , wherein determining whether the failure exhibited by the first set of cells corresponds to the known-failure mode further comprises:

determining whether metadata associated with the first set of cells satisfies a threshold condition of one or more known-failure identifiers of the known-failure mode.

11 . The method of claim 8 , wherein the failure is caused by a physical defect of the failed subset of cells.

12 . The method of claim 8 , wherein estimating the severity of the failure further comprises:

responsive to determining that a voltage distribution of a set of voltage distributions for the first set of cells has shifted, determining a voltage shift of the voltage distribution; and

adjusting an estimate of the severity of the failure based on the voltage shift.

13 . The method of claim 8 , further comprising:

identifying the first set of cells as a partially failed set of cells.

14 . The method of claim 8 , further comprising:

precluding the first set of cells from being used by a memory write operation.

15 . A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:

detecting a failure exhibited by a first set of cells of a memory device;

estimating a severity of the failure;

identifying, based on the severity of the failure, a failed subset of cells of the first set of cells; and

copying data from the failed subset of cells to a second set of cells of the memory device;

identifying an adjacent subset of cells of the first set of cells that are adjacent to the failed subset of cells; and

programming first dummy data to the failed subset of cells and second dummy data to the adjacent subset of cells.

16 . The non-transitory computer-readable storage medium of claim 15 , the operations further comprising:

determining whether metadata associated with the first set of cells satisfies a threshold condition of one or more known-failure identifiers of a known-failure mode.

17 . The non-transitory computer-readable storage medium of claim 15 , the operations further comprising:

identifying the first set of cells as a partially failed set of cells; and

precluding the partially failed set of cells from being used by a memory write operation.