IP Library › Granted Patent US 12688974
Granted Patent B2
US 12688974 · App. 18/055,128 · Granted Jul 21, 2026

Capacitor structure and semiconductor device

Inventors: Je-Min Wen (Hsinchu City, TW); Cheng-Hua Lin (Hsinchu City, TW); Ching-Han Jan (Hsinchu City, TW)
Assignee: MEDIATEK INC.
H01G4/38H01G4/01H01G4/018H10D1/692
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Quick Facts
Patent No.
US 12688974
App. No.
18/055,128
Granted
Jul 21, 2026
Kind
B2
Abstract

A capacitor structure includes a first comb-shaped electrode, a second comb-shaped electrode, a bottom electrode, an insulator layer, and a top electrode. The first comb-shaped electrode has a first pad and first fingers connecting to the first pad. The second comb-shaped electrode has a second pad and second fingers connecting to the first pad, wherein one of the second fingers is disposed between two adjacent first fingers. The bottom electrode includes a first portion, a second portion and a third portion which are spaced apart, wherein the first portion and the third portion are electrically coupled to the first comb-shaped electrode and the second comb-shaped electrode, respectively. The insulator layer is disposed over the bottom electrode. The top electrode is disposed over the insulator layer.

Claims (41)

1 . A capacitor structure, comprising:

a first comb-shaped electrode having a first pad and a plurality of first fingers connecting to the first pad;

a second comb-shaped electrode having a second pad and a plurality of second fingers connecting to the second pad, wherein one of the second fingers is disposed between two adjacent first fingers;

a bottom electrode formed in a metal layer, the bottom electrode comprising a first portion, a second portion and a third portion which are separate portions and are spaced apart by a dielectric material, wherein the second potion is disposed between the first portion and the third portion, and wherein each of the first portion, the second portion, and the third portion is electrically isolated from one another through the dielectric material within the metal layer, and the first portion and the third portion are electrically coupled to the first comb-shaped electrode and the second comb-shaped electrode, respectively;

an insulator layer disposed over the bottom electrode; and

a top electrode disposed over the insulator layer.

2 . The capacitor structure as claimed in claim 1 , wherein the first comb-shaped electrode is spaced apart from the second comb-shaped electrode by the dielectric material.

3 . The capacitor structure as claimed in claim 1 , further comprising:

a third comb-shaped electrode disposed below the first comb-shaped electrode and having a third pad and a plurality of third fingers connecting to the third pad; and

a fourth comb-shaped electrode disposed below the first comb-shaped electrode and having a fourth pad and a plurality of fourth fingers connecting to the fourth pad, wherein one of the fourth fingers is disposed between two adjacent third fingers.

4 . The capacitor structure as claimed in claim 3 , wherein the third pad is substantially parallel to the first pad, and the fourth pad is substantially parallel to the second pad.

5 . The capacitor structure as claimed in claim 3 , wherein the third pad is substantially parallel to the plurality of first fingers, and the fourth pad is substantially parallel to the plurality of second fingers.

6 . The capacitor structure as claimed in claim 1 , further comprising:

a third comb-shaped electrode disposed over the top electrode and having a third pad and a plurality of third fingers connecting to the third pad; and

a fourth comb-shaped electrode disposed over the top electrode and having a fourth pad and a plurality of fourth fingers connecting to the fourth pad, wherein one of the fourth fingers is disposed between two adjacent third fingers.

7 . The capacitor structure as claimed in claim 6 , wherein the first portion and the third portion of the bottom electrode are electrically coupled to the third comb-shaped electrode and the fourth comb-shaped electrode, respectively.

8 . The capacitor structure as claimed in claim 6 , further comprising:

a fifth comb-shaped electrode disposed over the third comb-shaped electrode and having a fifth pad and a plurality of fifth fingers connecting to the fifth pad; and

a sixth comb-shaped electrode disposed over the third comb-shaped electrode and having a sixth pad and a plurality of sixth fingers connecting to the sixth pad, wherein one of the sixth fingers is disposed between two adjacent fifth fingers.

9 . The capacitor structure as claimed in claim 8 , wherein the fifth pad is substantially parallel to the third pad, and the sixth pad is substantially parallel to the fourth pad.

10 . The capacitor structure as claimed in claim 8 , wherein the fifth pad is substantially parallel to the plurality of third fingers, and the sixth pad is substantially parallel to the plurality of fourth fingers.

11 . A semiconductor device, comprising:

a first capacitor structure disposed over a substrate and comprising:

a first comb-shaped electrode; and

a second comb-shaped electrode adjacent to the first comb-shaped electrode;

a dielectric material disposed over the first capacitor structure; and

a second capacitor structure disposed over the dielectric material and comprising:

a bottom electrode formed in a metal layer, the bottom electrode comprising a first portion, a second portion, and a third portion which are separate portions and are spaced apart by the dielectric material, wherein the second potion is disposed between the first portion and the third portion, and wherein each of the first portion, the second portion, and the third portion is electrically isolated from one another through the dielectric material within the metal layer, and the first portion and the third portion are electrically coupled to the first capacitor structure;

an insulator layer disposed over the bottom electrode; and

a top electrode disposed over the insulator layer.

12 . The semiconductor device as claimed in claim 11 , wherein the dielectric material extends between the first comb-shaped electrode and the second comb-shaped electrode.

13 . The semiconductor device as claimed in claim 11 , further comprising a third capacitor structure disposed between the substrate and the first capacitor structure and comprising:

a third comb-shaped electrode; and

a fourth comb-shaped electrode adjacent to the third comb-shaped electrode and spaced apart from the third comb-shaped electrode by the dielectric material.

14 . The semiconductor device as claimed in claim 11 , further comprising a third capacitor structure disposed over the second capacitor structure and comprising:

a third comb-shaped electrode; and

a fourth comb-shaped electrode adjacent to the third comb-shaped electrode and spaced apart from the third comb-shaped electrode by the dielectric material.

15 . The semiconductor device as claimed in claim 14 , further comprising a fourth capacitor structure electrically coupled to the third capacitor structure and comprising:

a fifth comb-shaped electrode; and

a sixth comb-shaped electrode adjacent to the fifth comb-shaped electrode and spaced apart from the fifth comb-shaped electrode by the dielectric material.

16 . The semiconductor device as claimed in claim 14 , further comprising a conductive layer disposed between the second capacitor structure and the third capacitor structure.