Substrate processing apparatus
There is provided a substrate processing apparatus including a chamber having a processing space therein, a dielectric window arranged at an upper portion of the chamber and configured to cover an upper surface of the chamber, and an RF source disposed on the dielectric window and configured to supply RF power to generate plasma from gas in the processing space, wherein the RF source includes an RF electrode disposed on the dielectric window and an RF plate disposed on the RF electrode, the dielectric window includes a groove extending vertically downward from an uppermost surface of the dielectric window, and the RF plate has a ring shape.
1 . A substrate processing apparatus, comprising:
a chamber defining a processing space therein;
a dielectric window arranged at an upper portion of the chamber, a lower planar surface of the dielectric window spanning across the upper portion and defining an upper planar surface of the chamber; and
an RF source disposed on the dielectric window and being configured to supply RF power to generate plasma from gas in the processing space,
wherein the RF source includes an RF electrode disposed on the dielectric window and an RF plate disposed on the RF electrode,
the dielectric window defining a groove extending vertically downward from an uppermost surface of the dielectric window, and the RF plate has a ring shape,
an uppermost surface of the dielectric window being arranged at a same vertical level as a vertical level of a lower surface of the RF electrode, and is arranged at a vertical level greater than a vertical level of a lowermost surface of the RF plate.
2 . The substrate processing apparatus of claim 1 , wherein a vertically oriented protrusion portion of the RF plate is engaged with the groove, and the lower planar surface spans horizontally across the upper portion.
3 . The substrate processing apparatus of claim 1 , wherein, in a plan view, each of side surfaces of the RF plate is not aligned with side surfaces of the groove in a vertical direction, and is located inside each of the side surfaces of the groove in a horizontal direction.
4 . The substrate processing apparatus of claim 1 , wherein the RF electrode includes an optically transparent material.
5 . A substrate processing apparatus, comprising:
a chamber defining a processing space therein;
a dielectric window arranged at an upper portion of the chamber and being configured to cover an upper surface of the chamber; and
an RF source disposed on the dielectric window and being configured to supply RF power to generate plasma from gas in the processing space,
wherein the RF source includes an RF electrode disposed on the dielectric window and an RF plate disposed on the RF electrode,
the dielectric window including a groove extending vertically downward from an uppermost surface of the dielectric window, and the RF plate has a ring shape,
wherein an uppermost surface of the dielectric window is arranged at a same vertical level as a vertical level of a lower surface of the RF electrode, and is arranged at a vertical level greater than a vertical level of a lowermost surface of the RF plate.
6 . A substrate processing apparatus, comprising:
a chamber defining a processing space therein;
a dielectric window arranged at an upper portion of the chamber and being configured to cover an upper surface of the chamber; and
an RF source disposed on the dielectric window and being configured to supply RF power to generate plasma from gas in the processing space,
wherein the RF source includes an RF power source configured to generate the RF power, an RF electrode disposed on the dielectric window, and an RF plate disposed on the RF electrode,
the RF plate including
a trench being defined to extend vertically upward from a surface where the RF plate and the RF electrode are in contact with each other; and
a gasket arranged inside the trench,
the dielectric window defining a groove extending vertically downward from an uppermost surface of the dielectric window,
a protrusion portion of the RF plate being engaged with the groove,
the RF electrode including an optically transparent material, and
the RF plate having a ring shape.
7 . The substrate processing apparatus of claim 6 , wherein an uppermost surface of the gasket is in direct contact with an uppermost surface of an uneven surface of the RF plate, and
a lowermost surface of the gasket is in direct contact with an upper surface of the RF electrode.
8 . The substrate processing apparatus of claim 6 , wherein an upper surface of the RF electrode is in contact with a lower surface of the trench, and
a lower surface of the RF electrode is in contact with the upper surface of the dielectric window.
9 . The substrate processing apparatus of claim 6 , wherein the RF plate defines a hole, the RF plate further including a coupling arranged inside the hole to fix the RF plate and the dielectric window together.
10 . The substrate processing apparatus of claim 9 , wherein a lower surface of the coupling is arranged at a vertical level less than a vertical level of a lowermost surface of the RF plate, and
in a plan view, the coupling is arranged inside the groove.
11 . The substrate processing apparatus of claim 9 , wherein the coupling includes a non-conductive material for electrical insulation of the dielectric window.
12 . The substrate processing apparatus of claim 6 , wherein the gasket includes a conductive material for electrical connection between the RF electrode and the RF plate.
13 . The substrate processing apparatus of claim 6 , wherein the gasket is elastically compressed.
14 . The substrate processing apparatus of claim 6 , wherein a major axis of a vertical cross-section of the gasket is parallel to a horizontal direction, and
a minor axis of a vertical cross-section of the gasket is parallel to a vertical direction.