Film deposition apparatus
A film deposition apparatus includes a reactive gas supply configured to supply a reactive gas to a first chamber; a source gas supply configured to supply a source gas to a second chamber; a first plasma mechanism configured to generate inductively coupled plasma for activating the reactive gas; a second plasma mechanism configured to generate capacitively coupled plasma for activating the reactive gas activated by the first plasma mechanism and the source gas; and a controller. The second plasma mechanism includes an upper electrode; a lower electrode opposite to the upper electrode; a first high-frequency power supply configured to apply a high-frequency power to the upper electrode via a first matcher; a second high-frequency power supply configured to apply a high-frequency power to the upper electrode via a second matcher; and a third matcher connected to the lower electrode. The third matcher includes a variable capacitor.
1 . A film deposition apparatus comprising:
a reactive gas supply configured to supply a reactive gas to a first chamber;
a source gas supply configured to supply a source gas to a second chamber;
a first plasma mechanism configured to generate inductively coupled plasma for activating the reactive gas;
a second plasma mechanism configured to generate capacitively coupled plasma for activating the reactive gas activated by the first plasma mechanism and the source gas; and
a controller,
wherein the second plasma mechanism includes:
an upper electrode;
a lower electrode opposite to the upper electrode;
a first high-frequency power supply configured to apply a high-frequency power to the upper electrode via a first matcher;
a second high-frequency power supply configured to apply a high-frequency power to the upper electrode via a second matcher; and
a third matcher connected to the lower electrode, wherein the third matcher includes at least one variable capacitor of the third matcher.
2 . The film deposition apparatus according to claim 1 , wherein the at least one variable capacitor of the third matcher includes:
a first variable capacitor and a second variable capacitor arranged in parallel; and
a coil arranged in series with respect to the first variable capacitor and the second variable capacitor.
3 . The film deposition apparatus according to claim 1 ,
wherein the first matcher includes a first high-frequency sensor,
wherein the controller controls a variable capacitor of the first matcher based on a detection result of the first high-frequency sensor,
wherein the second matcher includes a second high-frequency sensor; and
wherein the controller controls a variable capacitor of the second matcher based on a detection result of the second high-frequency sensor.
4 . The film deposition apparatus according to claim 3 ,
wherein the third matcher includes a third high-frequency sensor, and
wherein the controller controls the at least one variable capacitor of the third matcher based on a detection result of the third high-frequency sensor.
5 . The film deposition apparatus according to claim 4 ,
wherein the controller controls the variable capacitor of the first matcher again based on a detection result of the first high-frequency sensor and controls the variable capacitor of the second matcher again based on a detection result of the second high-frequency sensor, after a state of the capacitively coupled plasma in the second plasma mechanism is changed by controlling the at least one variable capacitor of the third matcher.
6 . The film deposition apparatus according to claim 1 , further comprising:
a first heater provided in a gas flow path connected from the first plasma mechanism to a showerhead of the second plasma mechanism; and
a second heater provided in the showerhead.