Expanded bulk silicon anode material
A method for making an electrode involves forming a molten salt, attaching a negative terminal of a direct current power source to a silicon blank and a positive terminal of the direct current power source to a sacrificial electrode or a container for the molten salt. The method further involves submerging the silicon blank in the molten salt such that an electrolytic reaction drives alkali metal ions into the lattice of the silicon blank.
1 . A method of forming an electrode, the method comprising:
while concurrently applying negative potential to a bulk silicon blank and positive potential to a sacrificial electrode or a container holding a molten salt, comprising sodium hydroxide or lithium hydroxide, at a temperature of at least 500 degrees C., submerging for a predetermined period of time the bulk silicon blank and sacrificial electrode in the molten salt such that an electrolytic reaction of the molten salt with the bulk silicon blank drives sodium ions or lithium ions from the molten salt into a lattice of the bulk silicon blank resulting in formation of an anode and ductile deformation thereof; and
after the predetermined period of time, removing the anode from the molten salt to cool the anode.
2 . The method of claim 1 further comprising arranging a current collector in contact with the anode.
3 . The method of claim 1 , wherein the sodium ions or lithium ions are driven into the lattice such that after discharge, at least some of the sodium ions or lithium ions remain in the lattice.
4 . The method of claim 1 , wherein the predetermined period of time is sufficient to permit the anode to achieve a maximum holding capacity.
5 . The method of claim 1 , further comprising heating sodium or lithium hydroxide to form the molten salt.
6 . The method of claim 1 , wherein the bulk silicon blank is a silicon wafer.
7 . A method of forming an electrode, the method comprising:
heating sodium hydroxide or lithium hydroxide to at least 500 degrees C. to form a molten salt;
attaching a negative terminal of a direct current power source to a silicon wafer and attaching a positive terminal of the direct current power source to a sacrificial electrode or the molten salt;
lowering the silicon wafer, with the negative and positive terminals attached, into the molten salt to drive sodium ions or lithium ions into a lattice of the silicon wafer resulting in formation of an ion laden anode; and
after the ion laden anode achieves maximum holding capacity, raising the ion laden anode out of the molten salt to cool the ion laden anode.
8 . The method of claim 7 , further comprising arranging a current collector in contact with the ion laden anode.
9 . The method of claim 7 , wherein the sodium ions or lithium ions are driven into the lattice such that after discharge, at least some of the sodium ions or lithium ions remain in the lattice.
10 . A method of forming an electrode, the method comprising:
preparing a molten salt by heating an alkali metal hydroxide to a temperature of at least 500 degrees C.;
concurrently applying a negative potential to a bulk silicon blank and positive potential to a sacrificial electrode or container holding the molten salt; and
immersing the silicon blank and sacrificial electrode in the molten salt to initiate an electrolytic reaction driving alkali metal ions from the molten salt into a lattice of the bulk silicon blank resulting in formation of an ion laden anode.
11 . The method of claim 10 further comprising, after a predetermined period of time, subsequently removing the ion laden anode from the molten salt to allow it to cool.
12 . The method of claim 10 further comprising arranging a current collector in contact with the ion laden anode.
13 . The method of claim 10 , wherein the alkali metal ions are driven into the lattice such that after discharge, at least some of the alkali metal ions remain in the lattice.
14 . The method of claim 10 , wherein the alkali metal ions are sodium or lithium ions.