Antenna device

1 . An antenna device, comprising:

a first substrate;

a first antenna unit, disposed above the first substrate, and comprising:

a first transistor;

a first lower antenna electrode, electrically connected to the first transistor; and

a first upper antenna electrode, at least partially overlapping with the first lower antenna electrode;

a second antenna unit, disposed above the first substrate, and comprising:

a second transistor, wherein a gate electrode, a source electrode and a drain electrode of the first transistor are respectively symmetrical to a gate electrode, a source electrode and a drain electrode of the second transistor;

a second lower antenna electrode, electrically connected to the second transistor; and

a second upper antenna electrode, at least partially overlapping with the second lower antenna electrode.

2 . The antenna device of claim 1 , wherein the first lower antenna electrode is symmetrical to the second lower antenna electrode.

3 . The antenna device of claim 1 , wherein the gate electrode, the source electrode and the drain electrode of the first transistor are respectively mirror symmetrical to the gate electrode, the source electrode and the drain electrode of the second transistor based on an external mirror symmetry axis.

4 . The antenna device of claim 3 , wherein the first lower antenna electrode is mirror symmetrical to the second lower antenna electrode based on the external mirror symmetry axis.

5 . The antenna device of claim 1 , wherein the first antenna unit comprises: a third transistor, wherein a gate electrode, a source electrode and a drain electrode of the third transistor are respectively mirror symmetrical to the gate electrode, the source electrode and the drain electrode of the first transistor based on an internal mirror symmetry axis.

6 . The antenna device of claim 1 , wherein the first lower antenna electrode has a mirror symmetry structure based on an internal mirror symmetry axis.

7 . The antenna device of claim 1 , wherein the second antenna unit comprises: a fourth transistor, wherein a gate electrode, a source electrode and a drain electrode of the fourth transistor are respectively mirror symmetrical to the gate electrode, the source electrode and the drain electrode of the third transistor based on an external mirror symmetry axis.

8 . The antenna device of claim 1 , wherein the gate electrode, the source electrode and the drain electrode of the first transistor are configured to have a rotational symmetry with the gate electrode, the source electrode and the drain electrode of the second transistor based on an external rotational symmetry axis.

9 . The antenna device of claim 1 , wherein the first antenna unit comprises: a third transistor, wherein a gate electrode, a source electrode and a drain electrode of the third transistor are configured to have a rotational symmetry with the gate electrode, the source electrode and the drain electrode of the first transistor based on an internal rotational symmetry axis.

10 . The antenna device of claim 1 , wherein the first lower antenna electrode has a rotationally symmetric structure based on an internal rotational symmetry axis.

11 . The antenna device of claim 1 , wherein the gate of the first transistor and the gate of the second transistor are electrically connected to each other through a scan line.

12 . The antenna device of claim 1 , further comprises:

a metal mesh structure, electrically connected with the first upper antenna electrode and the second upper antenna electrode.

13 . The antenna device of claim 12 , further comprises:

a barrier layer, overlapping with the first transistor in a normal direction of a top surface of the first substrate, wherein the barrier layer and the first upper antenna electrode belong to a same layer.

14 . The antenna device of claim 1 , further comprises:

a second substrate, wherein the first antenna unit and the second antenna unit are located between the first substrate and the second substrate;

a third substrate and a fourth substrate:

a third antenna unit, disposed between the third substrate and the fourth substrate, wherein the third antenna unit comprises:

a third transistor;

a third lower antenna electrode, electrically connected to the third transistor; and

a third upper antenna electrode, at least partially overlapping with the third lower antenna electrode, wherein the gate electrode, the source electrode and the drain electrode of the first transistor are respectively overlapping with a gate electrode, a source electrode and a drain electrode of the third transistor; and

a spacer layer, supporting a distance between the first substrate and the third substrate so that there is an air gap between the first substrate and the third substrate.

15 . The antenna device of claim 1 , wherein the first antenna unit further comprises a first common electrode surrounding the first upper antenna electrode, the second antenna unit further comprises a second common electrode surrounding the second upper antenna electrode wherein the first common electrode and the second common electrode are integrated as one.

16 . The antenna device of claim 1 , wherein the first antenna unit further comprises a first common electrode surrounding the first upper antenna electrode, the second antenna unit further comprises a second common electrode surrounding the second upper antenna electrode, and the first common electrode and the second common electrode are electrically connected to each other through a conductive line structure.

17 . The antenna device of claim 1 , wherein the first lower antenna electrode comprises a plurality of strip structures or a plurality of L-shaped structures.