Surface emitting laser and surface emitting laser array

1 . A surface emitting laser, comprising:

a substrate comprising a convex part on a surface of the substrate; and

a vertical resonator structure on the substrate, wherein the vertical resonator structure includes an active layer, a first semiconductor layer, and a current blocking layer, wherein:

the first semiconductor layer comprises a semiconductor layer of a first conductivity type,

the first semiconductor layer includes a step structure part that has a shape which conforms to the convex part at a location that faces the convex part,

the current blocking layer comprises a semiconductor layer of a second conductivity type different from the first conductivity type,

the current blocking layer has an opening in which an inner peripheral surface is in contact with an outer peripheral surface of the step structure part, and

the opening has a same shape as the convex part in plan view.

2 . The surface emitting laser according to claim 1 , wherein the vertical resonator structure further includes:

a first DBR (distributed Bragg reflector) layer on a substrate side in a positional relationship with the active layer, and

a second DBR layer on an opposite side to the substrate in a positional relationship with the active layer, and wherein

the first semiconductor layer comprises a spacer layer between the active layer and the second DBR layer, and

the current blocking layer is between the first semiconductor layer and the second DBR layer.

3 . The surface emitting laser according to claim 2 , wherein

the first semiconductor layer comprises a p-type semiconductor layer, and

the current blocking layer comprises an n-type or i-type single-layer semiconductor layer, or an n-type or i-type DBR layer.

4 . A surface emitting laser array, comprising:

a substrate comprising a plurality of convex parts on a surface of the substrate; and

a vertical resonator structure on the substrate, wherein the vertical resonator structure includes an active layer, a first semiconductor layer, and a current blocking layer, wherein:

the first semiconductor layer comprises a semiconductor layer of a first conductivity type,

the first semiconductor layer includes a plurality of step structure parts, each step structure part of the plurality of step structure parts faces a corresponding convex part of the plurality of convex parts,

each step structure part of the plurality of step structure parts has a shape conforming to the corresponding convex part of the plurality of convex parts, and

the current blocking layer comprises a semiconductor layer of a second conductivity type different from the first conductivity type,

the current blocking layer has an opening for each of the plurality of step structure parts, and

the opening has an inner peripheral surface in contact with an outer peripheral surface of a corresponding step structure part of the plurality of step structure parts, and

the opening has a same shape as the corresponding convex part in plan view.

5 . The surface emitting laser array according to claim 4 , further comprising a separation part that is configured to electrically separate the vertical resonator structure for each of the plurality of step structure parts.

6 . The surface emitting laser array according to claim 5 , wherein the separation part comprises a region having a high resistance, and the separation part is configured to perform ion implantation on the vertical resonator structure.

7 . The surface emitting laser array according to claim 5 , wherein

the vertical resonator structure has a mesa shape for each of the plurality of step structure parts, and

the separation part comprises a gap.