Semiconductor device

1 . A semiconductor device, comprising:

a substrate comprising a first side surface and a second side surface;

a first type semiconductor structure comprising a first surface, a second surface opposite the first surface and away from the substrate, a first extension, and a second extension;

semiconductor columnar bodies located between the substrate and the first type semiconductor structure, and the semiconductor columnar bodies comprising a first columnar body adjacent to the first side surface and a second columnar body adjacent to the second side surface;

a first electrode on the second surface of the first type semiconductor structure; and

a second electrode on the second surface of the first type semiconductor structure.

2 . The semiconductor device of claim 1 , wherein one of the semiconductor columnar bodies comprises a second type semiconductor structure, a current confinement layer and an active structure.

3 . The semiconductor device of claim 1 , further comprising an adhesive layer between the substrate and the semiconductor columnar bodies.

4 . The semiconductor device of claim 1 , further comprising a first connection layer on the second surface of the first type semiconductor structure, wherein the first connection layer has a width is smaller than a width of the first type semiconductor structure.

5 . The semiconductor device of claim 1 , further comprising a second connection layer between the substrate and the first type semiconductor structure, and the second connection layer comprising a first protruding portion extending beyond the first extension and a second protruding portion extending beyond the second extension.

6 . The semiconductor device of claim 5 , wherein the second connection layer is provided with a plurality of marking structures.

7 . The semiconductor device of claim 1 , further comprising a first pad structure and a second pad structure, wherein the first electrode is between the first pad structure and the first type semiconductor structure, and the second electrode is between the second pad structure and the first type semiconductor structure.

8 . The semiconductor device of claim 7 , wherein the first pad structure and the second pad structure comprise an element, but neither the first electrode nor the second electrode comprises the element.

9 . The semiconductor device of claim 8 , wherein the element comprises nickel (Ni), platinum (Pt), or both.

10 . The semiconductor device of claim 7 , further comprising an insulating layer between the first electrode and the first pad structure and between the second electrode and the second pad structure.

11 . The semiconductor device of claim 1 , further comprising an insulating layer between the first electrode and the first type semiconductor structure, wherein the first type semiconductor structure comprises a lateral surface between the first surface and the second surface, and the first electrode extends from the second surface to the lateral surface and is electrically connected to one of the semiconductor columnar bodies.

12 . The semiconductor device of claim 11 , wherein the insulating layer extends from the second surface to the first surface.

13 . The semiconductor device of claim 11 , wherein the insulating layer includes an opening portion adjacent to the first surface, wherein the first electrode extends from the second surface to the opening portion, and the opening portion is distributed within a peripheral region of the substrate.

14 . The semiconductor device of claim 1 , wherein the first electrode has a height, and the first type semiconductor structure has an epitaxial thickness substantially equal to the height.

15 . A semiconductor device, comprising:

a first type semiconductor structure comprising a first surface, a second surface opposite the first surface, a first lateral surface and a second lateral surface between the first surface and the second surface;

semiconductor columnar bodies on the first surface of the first type semiconductor structure, and the semiconductor columnar bodies comprising a first columnar body adjacent to the first lateral surface and a second columnar body adjacent to the second lateral surface;

a connection layer on the semiconductor columnar bodies and extending to the first surface of the first type semiconductor structure;

a first electrode on the second surface of the first type semiconductor structure; and

a second electrode on the second surface of the first type semiconductor structure;

wherein the connecting layer includes a first protruding portion extending beyond the first lateral surface of the first type semiconductor structure and a second protruding portion extending beyond the second lateral surface of the first type semiconductor structure, and the first electrode connects to the first protruding portion.

16 . The semiconductor device of claim 15 , further comprising an insulating layer between the first electrode and the first type semiconductor structure, the insulating layer comprising opening portions.

17 . The semiconductor device of claim 16 , wherein the first lateral surface of the first type semiconductor structure is between one of the opening portions and the first columnar body, the first electrode connects to the first protruding portion through the one of the opening portions.

18 . The semiconductor device of claim 16 , wherein the second lateral surface of the first type semiconductor structure is between one of the opening portions and the second columnar body.

19 . The semiconductor device of claim 18 , wherein the first electrode connects to the second protruding portion through the one of the opening portions.

20 . The semiconductor device of claim 16 , wherein the opening portions position beyond the first lateral surface or the second lateral surface.