Method for manufacturing vibration power generation device and vibration device
A method for manufacturing a vibration power generation device includes: first silicon substrate patterning for patterning a first silicon substrate to form a first support portion and a fixed electrode finger; second silicon substrate patterning for patterning a second silicon layer of a second silicon substrate in which a first silicon layer and the second silicon layer are laminated to form a movable electrode finger and patterning the first silicon layer to form a second support portion and a movable portion; electret film forming for forming an electret film at one of the movable electrode finger and the fixed electrode finger; and bonding for bonding the first silicon substrate to the second silicon layer side of the second silicon substrate such that the movable electrode finger and the fixed electrode finger face each other.
1 . A method for manufacturing a vibration power generation device including a support portion having a first support portion and a second support portion, a movable portion that is displaced in a first direction with respect to the support portion, a movable electrode finger coupled to the movable portion, and a fixed electrode finger coupled to the support portion, the method comprising:
first silicon substrate patterning for patterning a first silicon substrate by etching to form the first support portion and the fixed electrode finger;
second silicon substrate patterning for patterning a second silicon layer of a second silicon substrate in which a first silicon layer and the second silicon layer are laminated by etching to form the movable electrode finger and patterning the first silicon layer by etching to form the second support portion and the movable portion;
electret film forming for forming an electret film at one of the movable electrode finger and the fixed electrode finger; and
bonding for bonding the first silicon substrate to the second silicon layer side of the second silicon substrate such that the movable electrode finger and the fixed electrode finger face each other.
2 . The method for manufacturing a vibration power generation device according to claim 1 , wherein
the second silicon substrate is an SOI substrate in which a silicon oxide layer is interposed between the first silicon layer and the second silicon layer.
3 . The method for manufacturing a vibration power generation device according to claim 1 , wherein
in the second silicon substrate patterning, the first silicon layer is patterned by etching to form a spring portion that couples the second support portion with the movable portion.
4 . The method for manufacturing a vibration power generation device according to claim 1 , wherein
a first alignment mark is formed at the first support portion,
a second alignment mark is formed at the second support portion, and
in the bonding, the first silicon substrate and the second silicon substrate are positioned based on the first alignment mark and the second alignment mark.
5 . The method for manufacturing a vibration power generation device according to claim 4 , wherein
the first alignment mark is a through-hole penetrating the first support portion, and
in the bonding, the first silicon substrate and the second silicon substrate are positioned such that the through-hole and the second alignment mark overlap with each other.
6 . The method for manufacturing a vibration power generation device according to claim 1 , wherein
in the electret film forming, the electret film is formed at the movable electrode finger.
7 . A vibration device comprising:
a support portion having a first support portion and a second support portion;
a movable portion that is displaced in a first direction with respect to the support portion;
a movable electrode finger coupled to the movable portion; and
a fixed electrode finger coupled to the support portion, wherein
the first support portion and the fixed electrode finger are provided on a first silicon substrate,
the movable electrode finger is provided on a first silicon layer in a second silicon substrate on which the first silicon layer and a second silicon layer are laminated, and
the second support portion and the movable portion are provided on the second silicon layer in the second silicon substrate.