IP Library › Granted Patent US 12689336
Granted Patent B2
US 12689336 · App. 18/340,872 · Granted Jul 21, 2026

Amplifier system

Inventors: Kunal Mahaseth (Hsinchu, TW); Hsieh-Hung Hsieh (Hsinchu, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H03F3/195H03F1/565H03F2200/222H03F2200/387H03F2200/451
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Quick Facts
Patent No.
US 12689336
App. No.
18/340,872
Granted
Jul 21, 2026
Kind
B2
Abstract

An amplifier system includes an input pad having an input shunt capacitance, an output pad having an output shunt capacitance, and a high frequency amplifier including an input terminal coupled to the input pad and an output terminal coupled to the output pad. The input shunt capacitance is greater than the output shunt capacitance.

Claims (50)

1 . An amplifier system, comprising:

an input pad including a substrate, a bottom conductive layer over the substrate; and a top conductive layer over the bottom conductive layer and spaced apart from the bottom conductive layer, the input pad having an input shunt capacitance;

an output pad having an output shunt capacitance; and

a high frequency amplifier including an input terminal coupled to the input pad and an output terminal coupled to the output pad;

wherein the input shunt capacitance is greater than the output shunt capacitance.

2 . The amplifier system of claim 1 , wherein the input pad is shielded.

3 . The amplifier system of claim 1 , wherein the output pad is unshielded.

4 . The amplifier system of claim 1 , wherein the

bottom conductive layer includes a first bottom conductive layer over the substrate.

5 . The amplifier system of claim 4 , wherein the bottom conductive layer further comprises:

a second bottom conductive layer over the first bottom conductive layer and electrically connected to the first bottom conductive layer.

6 . The amplifier system of claim 5 , further comprising a conductive via connecting the first bottom conductive layer and the second bottom conductive layer.

7 . The amplifier system of claim 4 , wherein the top conductive layer comprises:

a first top conductive layer over the bottom conductive layer; and

a second top conductive layer over the first top conductive layer and electrically connected to the first top conductive layer.

8 . The amplifier system of claim 7 , further comprising a conductive via connecting the first top conductive layer and the second top conductive layer.

9 . The amplifier system of claim 4 , wherein the top conductive layer overlaps the bottom conductive layer.

10 . The amplifier system of claim 1 , wherein the high frequency amplifier comprises a single amplifier stage.

11 . The amplifier system of claim 1 , wherein the high frequency amplifier comprises a plurality of amplifier stages.

12 . An amplifier system, comprising:

a high frequency amplifier including an input terminal and an output terminal;

an input pad coupled to the input terminal, the input pad including a substrate, a bottom conductive layer over the substrate, and a top conductive layer over the bottom conductive layer and spaced apart from the bottom conductive layer; and

an unshielded output pad coupled to the output terminal.

13 . The amplifier system of claim 12 , wherein the input pad has an input shunt capacitance, and the output pad has an output shunt capacitance lower than the input shunt capacitance.

14 . The amplifier system of claim 12 , wherein the bottom conductive layer comprises:

a first bottom conductive layer over the substrate;

a second bottom conductive layer over the first bottom conductive layer; and

a conductive via electrically connecting the first bottom conductive layer and the second bottom conductive layer.

15 . The amplifier system of claim 12 , wherein the top conductive layer comprises:

a first top conductive layer over the bottom conductive layer;

a second top conductive layer over the first top conductive layer; and

a conductive via electrically connecting the first top conductive layer and the second top conductive layer.

16 . The amplifier system of claim 12 , further comprising:

an input matching circuit connected between the input pad and the high frequency amplifier; and

an output matching circuit connected between the output pad and the high frequency amplifier.

17 . A method, comprising:

providing a substrate;

forming an input pad including forming a bottom conductive layer over the substrate, and forming a top conductive layer over the bottom conductive layer such that the top conductive layer overlaps and is spaced apart from the bottom conductive layer;

connecting the input pad to an input terminal of a high frequency amplifier circuit;

forming an output pad; and

connecting the output pad to an output terminal of the high frequency amplifier circuit.

18 . The method of claim 17 , wherein the input pad has an input shunt capacitance, and the output pad has an output shunt capacitance lower than the input shunt capacitance.

19 . The method of claim 17 , wherein forming the input pad includes:

forming a first bottom conductive layer over the substrate;

forming a second bottom conductive layer over the first bottom conductive layer; and

electrically connecting the first bottom conductive layer and the second bottom conductive layer.

20 . The method of claim 17 , wherein forming the input pad includes:

forming a first top conductive layer over the bottom conductive layer;

forming a second top conductive layer over the first top conductive layer; and

electrically connecting the first top conductive layer and the second top conductive layer.