Semiconductor switch and semiconductor circuit
The object of the present invention is to provide a semiconductor switch and a semiconductor circuit having a higher degree of convenience. Provided is a semiconductor switch including a first transistor and a second transistor, the first transistor being a field-effect transistor, the second transistor being a superjunction bipolar junction transistor, wherein the first transistor and the second transistor are Darlington-connected in such a way that the first transistor to be the front stage.
1 . A semiconductor circuit comprising:
a semiconductor switch; and
a drive circuit, wherein
the semiconductor switch includes a first transistor and a second transistor, the first transistor being a field-effect transistor, the second transistor being a superjunction bipolar junction transistor,
the drive circuit includes a signal input section which receives an input signal and a charge extraction unit,
the first transistor and the second transistor are Darlington-connected such that the first transistor is located in the front stage, and
the charge extraction unit is configured to make a potential of a base of the second transistor lower than a potential of an emitter of the second transistor when the semiconductor switch is turned off in response to the input signal.
2 . The semiconductor circuit of claim 1 , wherein
the drive circuit further includes:
a first switch section connected to a gate of the first transistor; and
a direct current voltage source connected to the first switch section,
the signal input section is connected to the first switch section so that the input signal is input to the first switch section,
the first switch section is configured to invert the polarity of the voltage supplied from the direct current voltage source to the semiconductor switch, depending on whether the input signal is a first voltage or a second voltage, and
the charge extraction unit is connected to the base of the second transistor,
when the input signal is the first voltage, a predetermined voltage from the direct current voltage source is applied to the gate of the first transistor to turn on the semiconductor switch, and
in the transition of the input signal from the first voltage to the second voltage, charges in the gate of the first transistor are extracted to the direct current voltage source via the first switch section to turn off the semiconductor switch, and charges in the base of the second transistor are extracted to the negative pole of the direct current voltage source.
3 . The semiconductor circuit of claim 2 , wherein
the drive circuit further includes a first resistor connected to the direct current voltage source and the first switch section,
the charge extraction unit includes:
a second switch section connected to the direct current voltage source; and
a second resistor connected to the base of the second transistor and the second switch section,
the signal input section is connected to the second switch section so that the input signal is input to the second switch section, and
in the transition of the input signal from the first voltage to the second voltage, charges in the gate of the first transistor are extracted to the direct current voltage source via the first switch section and the first resistor, and the second switch section is turned on and charges in the base of the second transistor are extracted to the direct current voltage source via the second resistor and the second switch section.
4 . The semiconductor circuit of claim 2 , wherein
the drive circuit further includes a first resistor connected to the direct current voltage source and the first switch section,
the charge extraction unit includes an extraction diode whose anode is connected to the base of the second transistor and whose cathode is connected to the gate of the first transistor, and
in the transition of the input signal from the first voltage to the second voltage, charges in the gate of the first transistor are extracted to the direct current voltage source via the first switch section and the first resistor, and charges in the base of the second transistor are extracted to the direct current voltage source via the extraction diode and the first switch section.