Plasma activated fluid processing system
The disclosure relates to a plasma activated fluid processing; including an alternating current, AC, source, one reaction chamber, wherein the one reaction chamber has a plurality of reaction electrodes and a corresponding ground electrode, each reaction electrode and corresponding ground electrode separated by a gap; or a plurality of reaction chambers, wherein each reaction chamber has at least one reaction electrode and a corresponding ground electrode, the reaction electrode and corresponding ground electrode separated by a gap; wherein the AC source is electrically connected on one side to each ground electrode in parallel and on another side to each reaction electrode in parallel, wherein each reaction electrode is connected to ground via a capacitor, and wherein an inductor is provided between each reaction electrode and the AC source.
1 . A plasma activated fluid processing system, comprising:
an alternating current, AC, source operating between 10 KHz and 50 MHz; and
one or more reaction chambers, wherein each reaction chamber of the one or more reaction chambers comprises a plurality of reaction electrodes and at least one corresponding ground electrode, wherein each reaction electrode and the at least one corresponding ground electrode are separated by a gap,
wherein the AC source is electrically connected on one side to the at least one corresponding ground electrode in parallel and on another side to each reaction electrode of the plurality of reaction electrodes in parallel,
wherein each of reaction electrode of the plurality of reaction electrodes includes a capacitor connected to ground,
wherein an inductor is provided between each of the reaction electrodes and the AC source, and
wherein a frequency of the AC source is near a resonance frequency of an inductor-capacitor circuit formed by the inductor and the respective capacitor for each reaction electrode of the plurality of reaction electrodes.
2 . The plasma activated fluid processing system according to claim 1 , wherein the inductors provided between each of the reaction electrodes and the AC source are arranged a symmetrical fashion around a central point.
3 . The plasma activated fluid processing system according to claim 1 , wherein a voltage gain of the fluid processing system is configured to be determined, and wherein the frequency of the AC source is adjusted to maximize the voltage gain.
4 . The plasma activated fluid processing system according to claim 1 , wherein the capacitor is formed by an intrinsic capacitance of the system.
5 . The plasma activated fluid processing system according to claim 4 , wherein the intrinsic capacitance includes a stray capacitance of the reaction electrode and stray capacitance of the inductor.
6 . The plasma activated fluid processing system according to claim 1 , wherein the AC source is configured to control a voltage and/or a frequency and/or a waveform shape of the AC source output.
7 . The plasma activated fluid processing system according to claim 1 , wherein the at least one corresponding ground electrode is provided with a water interface, wherein the water interface forms the dielectric barrier.
8 . The plasma activated fluid processing system according to claim 1 , further comprising
a gas inlet and/or outlet,
a fluid inlet, and
a fluid outlet.
9 . The plasma activated fluid processing system according to claim 8 , wherein the fluid inlet and the fluid outlet are connected to a water reservoir for plasma activated water.