Semiconductor storage device
A semiconductor storage device includes a wiring pattern on an insulating base material; an insulating film covering partially the wiring pattern; and an electronic component. The wiring pattern includes a first pad having an edge in an arc shape, and a first wire. The insulating film has a first opening larger than the first pad. The first wire has a first portion, a second portion, and a third portion. The first portion is connected to the first pad inside the first opening extends in a first direction. The second portion is connected to the first pad inside the first opening and extends in a second direction. The third portion is connected to the first portion and the second portion. The first wire is connected with the first pad in an angular range of not more than 90 degrees in a circumferential direction of the first pad.
1 . A semiconductor storage device comprising:
an insulating base material;
a wiring pattern on the insulating base material;
an insulating film on a surface of the insulating base material, the insulating film covering a part of the wiring pattern; and
an electronic component electrically connected to the wiring pattern,
wherein the wiring pattern includes a first pad having an edge formed in an arc shape, and a first wire,
the insulating film has a first opening larger than the first pad,
the first wire has a first portion, a second portion, and a third portion,
the first portion being connected to the first pad inside the first opening and the first portion extending in a first direction,
the second portion being connected to the first pad inside the first opening and the second portion extending in a second direction, the second portion has a first distance from the first portion and a second distance from the first pad,
the first distance increases as the second distance increases, and
the third portion being in a side opposite to the first pad with respect to the first portion and the second portion, the third portion being connected to the first portion and the second portion, and
the first wire is connected with the first pad in an angular range of not more than 90 degrees in a circumferential direction of the first pad.
2 . The semiconductor storage device according to claim 1 , wherein a gap is present between the first portion and the second portion in the circumferential direction.
3 . The semiconductor storage device according to claim 1 , wherein the second portion is connected to the first pad at a position separated from the first portion in the circumferential direction.
4 . The semiconductor storage device according to claim 1 , wherein the first wire is connected with the first pad in the angular range of not more than 60 degrees in the circumferential direction of the first pad.
5 . The semiconductor storage device according to claim 1 , wherein the first wire includes a line portion disposed in a side opposite to the first pad with respect to the third portion and the line portion extends linearly,
when a virtual line that connects the first pad and the line portion at a shortest distance is defined as a first virtual line, the first direction is inclined to a first side with respect to the first virtual line, and
the second direction is inclined to a second side opposite to the first side with respect to the first virtual line.
6 . The semiconductor storage device according to claim 1 , wherein the wiring pattern further includes a second pad disposed near the first pad and having an edge in an arc shape, and a second wire,
the insulating film further has a second opening larger than the second pad,
the second wire has a first portion connected to the second pad inside the second opening and the first portion extends in a third direction different from the first direction, the second wire has a second portion connected to the second pad inside the second opening, and the second portion extends in a fourth direction different from the second direction where a distance of the second portion from the first portion of the second wire increases as a distance of the second portion from the second pad increases, and the second wire has a third portion disposed in a side opposite to the second pad with respect to the first portion and the second portion of the second wire and the third portion is connected to the first portion and the second portion of the second wire, and
the second wire is connected with the second pad in an angular range of not more than 90 degrees in a circumferential direction of the second pad.
7 . The semiconductor storage device according to claim 1 , wherein the electronic component has a solder joint connected to the first pad.
8 . The semiconductor storage device according to claim 1 , wherein the first portion and the second portion are exposed through the first opening.
9 . The semiconductor storage device according to claim 1 , wherein the electronic component is a semiconductor package.
10 . The semiconductor storage device according to claim 6 , wherein the first wire includes a first line portion in a side opposite to the first pad with respect to the third portion of the first wire and the first line portion extends linearly,
the second wire includes a second line portion in a side opposite to the second pad with respect to the third portion of the second wire and the second line portion extends linearly, and
the first line portion and the second line portion extends at least in part in parallel to each other.