IP Library Granted Patent US 12690136
Granted Patent B2
US 12690136 · App. 17/956,338 · Granted Jul 21, 2026

Embedded passives with cavity sidewall interconnect in glass core architecture

Inventors: Kristof Darmawikarta (Chandler, AZ); Srinivas Venkata Ramanuja Pietambaram (Chandler, AZ); Tarek A. Ibrahim (Mesa, AZ); Cary Kuliasha (Mesa, AZ); Siddharth K. Alur (Chandler, AZ); Jung Kyu Han (Chandler, AZ); Beomseok Choi (Chandler, AZ); Russell K. Mortensen (Chandler, AZ); Andrew Collins (Chandler, AZ); Haobo Chen (Chandler, AZ); Brandon C. Marin (Gilbert, AZ)
Assignee: Intel Corporation
H05K1/185H05K3/0047H05K3/4644H10W44/501H10W70/614H10W70/685H10W90/00H05K2201/1003H05K2201/10674
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Quick Facts
Patent No.
US 12690136
App. No.
17/956,338
Granted
Jul 21, 2026
Kind
B2
Abstract

An electronic device includes a substrate including a core layer; a cavity formed in the core layer, wherein the cavity includes sidewalls plated with a conductive material; a prefabricated passive electronic component disposed in the cavity; and a cavity sidewall connection providing electrical continuity from the plated cavity sidewalls to a first surface of the substrate and to a second surface of the substrate.

Claims (57)

1 . An electronic device comprising:

a substrate including a core layer;

a cavity within the core layer, wherein the cavity is defined by sidewalls of the core layer, and wherein at least a portion of the sidewalls includes a conductive material;

a prefabricated passive electronic component in the cavity, wherein the prefabricated passive electronic component comprises a coax magnetic inductor layer (CMIL) structure; and

a cavity sidewall connection comprising the conductive material on the cavity sidewalls and providing electrical continuity from a first surface of the substrate and to a second surface of the substrate.

2 . The electronic device of claim 1 , wherein the core layer is a glass core layer.

3 . The electronic device of claim 2 , wherein the substrate includes:

at least one first dielectric layer on a first surface of the glass core layer;

a first contact pad on the at least one first dielectric layer;

at least one second dielectric layer on a second surface of the glass core layer;

a second contact pad on the at least one second dielectric layer; and

wherein the cavity sidewall connection provides electrical continuity between the cavity sidewalls, the first contact pad, and the second contact pad.

4 . The electronic device of claim 3 , wherein the prefabricated passive electronic component has first and second electrical contacts to the first surface of the substrate.

5 . The electronic device of claim 3 , including multiple first contact pads on the first surface of the substrate in electrical contact with multiple cavity sidewall connections, wherein the first contact pads are connected together as a single net connection.

6 . The electronic device of claim 3 , wherein the prefabricated passive electronic component includes at least one contact on the first surface of the substrate and at least one second contact on the second surface of the substrate.

7 . The electronic device of claim 1 , wherein the CMIL structure includes a first contact pad on the first surface of the substrate and a second contact pad on the second surface of the substrate.

8 . The electronic device of claim 1 , including a mold material between the conductive material on the cavity sidewalls and the prefabricated passive electronic component.

9 . A method of making an electronic device, the method comprising:

forming a cavity in a core layer of a substrate;

plating sidewalls of the core layer that define the cavity with a conductive material;

disposing a prefabricated passive electronic component in the cavity, wherein the prefabricated passive electronic component comprises a coax magnetic inductor layer (CMIL) structure; and

forming a cavity sidewall connection in the substrate that provides electrical continuity between a first surface of the substrate and a second surface of the substrate via the conductive material on the sidewalls.

10 . The method of claim 9 , wherein the forming the cavity in the substrate includes forming a cavity in a glass core layer, and wherein plating the sidewalls includes plating sidewalls of the glass core layer with a layer of the conductive material.

11 . The method of claim 10 , wherein the prefabricated passive electronic component:

includes first and second contacts electrically connected to contact pads on the first surface of the substrate.

12 . The method of claim 10 , wherein forming the cavity sidewall connection includes:

forming at least one first dielectric layer on a first surface of the glass core layer;

forming a first contact pad on the at least one first dielectric layer;

forming at least one second dielectric layer on a second surface of the glass core layer; and

forming a second contact pad on the at least one second dielectric layer, wherein the first and second contact pads are electrically connected to the conductive material on the sidewalls.

13 . The method of claim 12 , including:

forming multiple first contact pads on the first surface of the substrate and multiple second contact pads on the second surface of the substrate;

connecting the first contact pads together as a first single net connection; and

connecting the second contact pads together as a second single net connection.

14 . The method of claim 10 ,

wherein the CMIL structure includes a first contact pad on the first surface of the substrate and a second contact pad on the second surface of the substrate.

15 . The method of claim 10 , including forming a through glass via in the core layer and filling the through glass via with the conductive material.

16 . The method of claim 9 ,

wherein the forming the cavity in the core layer of the substrate includes forming a cavity in an organic material.

17 . The method of claim 16 , including forming contact pads on the first surface of the substrate, wherein the contact pads are electrically connected to the CMIL structure.

18 . An electronic device comprising:

a substrate including a core layer;

a first prefabricated passive electronic component disposed in a first cavity within the core layer, wherein:

the first cavity is defined by a first sidewall of the core layer;

a conductive material is on the first sidewall of the core layer; and

the first prefabricated passive electronic component comprises a first inductor structure;

a second prefabricated passive electronic component disposed in a second cavity within the core layer and adjacent to the first cavity, wherein:

the second cavity is defined by a second sidewall of the core layer;

the conductive material is on the second sidewall of the core layer; and

the second prefabricated passive electronic component comprises a second inductor structure; and

a cavity sidewall connection located between the first and second cavities and providing electrical continuity between a first surface of the core layer and a second surface of the core layer through the conductive material on at least one of the first sidewall and the second sidewall of the core layer.

19 . The electronic device of claim 18 , wherein the cavity sidewall connection comprises the conductive material on both of the first sidewall and the second sidewall.

20 . The electronic device of claim 18 , wherein:

the first inductor structure is a first coax magnetic inductor layer (CMIL) structure;

the second inductor structure is a second CMIL structure;

each of the first and second CMIL structures comprise at least one through hole extending through a magnetic material; and

the core layer is glass.