Semiconductor device and manufacturing method of semiconductor device
A semiconductor device may include: a first gate structure in a first memory block and including stacked first gate lines, the first gate lines extending from a plane center region to a plane edge region; a second gate structure in a second memory block adjacent to the first memory block and including stacked second gate lines, the second gate lines extending from the plane center region to the plane edge region; an isolation insulating structure located a) between the first gate structure and the second gate structure and b) in the plane edge region, the isolation insulating structure including stacked insulating plates and insulating pillars extending through the insulating plates; and a slit structure located a) between the first gate structure and the second gate structure and b) in the plane center region, the slit structure connected to the isolation insulating structure, and including irregularities on a sidewall thereof.
1 . A semiconductor device comprising:
a first gate structure in a first memory block and including stacked first gate lines, the first gate lines extending from a plane center region to a plane edge region;
a second gate structure in a second memory block adjacent to the first memory block and including stacked second gate lines, the second gate lines extending from the plane center region to the plane edge region;
an isolation insulating structure located a) between the first gate structure and the second gate structure and b) in the plane edge region, the isolation insulating structure including insulating pillars arranged in a first direction and insulating plates which are stacked and connecting the insulating pillars; and
a slit structure located a) between the first gate structure and the second gate structure and b) in the plane center region, the slit structure connected to the isolation insulating structure, and including irregularities on a sidewall thereof.
2 . The semiconductor device of claim 1 , wherein the plane edge region and the plane center region are adjacent to each other in the first direction, and the first gate lines and the second gate lines extend in the first direction.
3 . The semiconductor device of claim 1 , wherein the insulating plates extend in the first direction.
4 . The semiconductor device of claim 1 , wherein the insulating plates have a greater width than the insulating pillars in a second direction intersecting the first direction.
5 . The semiconductor device of claim 1 , further comprising insulating layers located in the plane edge region and stacked alternately with the insulating plates.
6 . The semiconductor device of claim 5 , wherein the insulating layers extend between the stacked first gate lines and between the stacked second gate lines.
7 . The semiconductor device of claim 1 , wherein the sidewall of the slit structure includes a convex portion and a concave portion.
8 . The semiconductor device of claim 1 , wherein a sidewall of each of the insulating plates includes a convex portion and a concave portion.
9 . The semiconductor device of claim 1 , wherein the first gate structure and the second gate structure are electrically isolated from each other by the isolation insulating structure and the slit structure.
10 . The semiconductor device of claim 1 , further comprising:
a first channel structure extending through the first gate structure; and
first contact structures extending through the first gate structure and connected to the first gate lines, respectively.
11 . A semiconductor device comprising:
a dummy stack including sacrificial layers and insulating layers that are alternately stacked;
a first gate structure adjacent to the dummy stack in a first direction and including stacked first gate lines;
a second gate structure adjacent to the dummy stack in the first direction and including stacked second gate lines;
first contact structures extending through the first gate structure and connected to the first gate lines, respectively;
second contact structures extending through the second gate structure and connected to the second gate lines, respectively;
a slit structure extending between the first gate structure and the second gate structure; and
an isolation insulating structure connected to the slit structure and extending between the first gate structure and the second gate structure to protrude into the dummy stack.
12 . The semiconductor device of claim 11 , wherein the first gate structure and the second gate structure are adjacent to each other in a second direction intersecting the first direction, and the slit structure and the isolation insulating structure extend in the first direction.
13 . The semiconductor device of claim 11 , wherein the first gate structure and the second gate structure are electrically isolated from each other by the slit structure, the isolation insulating structure, and the dummy stack.
14 . The semiconductor device of claim 11 , wherein the insulating layers extend between the stacked first gate lines and between the stacked second gate lines.
15 . The semiconductor device of claim 11 , wherein the isolation insulating structure comprises:
stacked insulating plates; and
insulating pillars extending through the stacked insulating plates.
16 . The semiconductor device of claim 15 , wherein the insulating layers extend between the insulating pillars.
17 . The semiconductor device of claim 15 , wherein a sidewall of each of the insulating plates includes irregularities.
18 . The semiconductor device of claim 11 , wherein a sidewall of the slit structure includes irregularities.
19 . The semiconductor device of claim 1 , wherein:
the first gate structure includes a cell region and a contact region, and
the cell region and the contact region are disposed at the plane center region.
20 . The semiconductor device of claim 1 , further comprising:
a dummy stack including sacrificial layers and insulating layers that are alternately stacked,
wherein the dummy stack is adjacent to the first gate structure and the second gate structure in a first direction, and
wherein the isolation insulating structure protrudes into the dummy stack.