Semiconductor device structure
A semiconductor device structure and method of manufacturing the same are provided. The semiconductor device structure includes an interposer and a first electronic component. The interposer includes a first semiconductor die and a second semiconductor die. The first semiconductor die includes a first cache memory and a first memory control circuit. The second semiconductor die includes a second cache memory and a second memory control circuit. The first electronic component is disposed on the interposer and in communication with the first semiconductor die and the second semiconductor die.
1 . A semiconductor device structure, comprising:
an interposer, comprising:
a first semiconductor die comprising a first circuit region, a first cache memory and a first memory control circuit, wherein the first cache memory and the first memory control circuit are spaced apart from each other and are disposed within the first circuit region; and
a second semiconductor die comprising a second circuit region, a second cache memory and a second memory control circuit, wherein the second cache memory and the second memory control circuit are spaced apart from each other and are disposed within the second circuit region; and
a first electronic component disposed on the interposer and in communication with the first semiconductor die and the second semiconductor die.
2 . The semiconductor device structure of claim 1 , further comprising:
a redistribution structure disposed between the interposer and the first electronic component.
3 . The semiconductor device structure of claim 2 , further comprising:
a second electronic component disposed on the interposer, wherein the second electronic component is in communication with the first electronic component by the redistribution structure;
wherein the second electronic component vertically overlaps with the first memory control circuit and is free from vertically overlapping with the first cache memory.
4 . The semiconductor device structure of claim 3 , wherein the second electronic component comprises a dynamic random access memory (DRAM).
5 . The semiconductor device structure of claim 4 , wherein the first cache memory is a static random access memory (SRAM).
6 . The semiconductor device structure of claim 5 , wherein the second cache memory is the SRAM.
7 . The semiconductor device structure of claim 1 , wherein the first cache memory and the first memory control circuit of the first semiconductor die and the second cache memory and the second memory control circuit of the second semiconductor die have a mirror symmetry that the first cache memory is closer to the second cache memory than the first memory control circuit is, such that the first cache memory and the second cache memory are positioned between the first memory control circuit and the second memory control circuit.
8 . The semiconductor device structure of claim 1 , wherein the first cache memory is closer to the second memory control circuit than to the second cache memory.
9 . The semiconductor device structure of claim 1 , further comprising:
an encapsulant encapsulating the first semiconductor die and the second semiconductor die.
10 . The semiconductor device structure of claim 1 , wherein the first semiconductor die has a first surface and a second surface opposite to the first surface and facing the first electronic component, wherein the first cache memory is disposed adjacent to the second surface of the first semiconductor die.
11 . The semiconductor device structure of claim 10 , wherein the first semiconductor die comprises a through via extending from the first surface of the first semiconductor die.
12 . The semiconductor device structure of claim 1 , wherein the first electronic component is positioned above and vertically overlaps the first cache memory and the second cache memory,
wherein the first electronic component is positioned above and free from vertically overlapping the first memory control circuit and the second memory control circuit.