High voltage semiconductor device and method of manufacturing same
Disclosed is a high voltage semiconductor device and a method of manufacturing the same and, more particularly, a high voltage semiconductor device and a method of manufacturing the same enabling more effective integration through improvement of breakdown voltage (BV) characteristics during device turn-on and/or turn-off and consequent improvement of specific on-resistance (Rsp) characteristics by forming or including a floating gate and/or a connection structure on a substrate, between a gate electrode and a drain.
1 . A high voltage semiconductor device comprising:
a substrate;
a drift region on the substrate;
a body region on the substrate;
a drain in the drift region;
a source in the body region;
a gate insulating film on the substrate, and a gate electrode on the gate insulating film;
an insulating pattern on the gate electrode and the substrate;
a conductive field plate on the insulating pattern; and
a first floating gate between the gate electrode and the drain, wherein:
the insulating pattern extends continuously from an uppermost surface of the gate electrode to an uppermost surface of the floating gate, and
the conductive field plate comprises a first plate having one end on the gate electrode and an opposite end on the first floating gate, and a second plate spaced apart from the first plate and having one end on the first floating gate.
2 . The high voltage semiconductor device of claim 1 , further comprising:
a body contact, adjacent to or in contact with the source.
3 . The high voltage semiconductor device of claim 1 , further comprising:
a deep well in the substrate, under the drift region; and
a buried layer in the substrate, under the deep well.
4 . The high voltage semiconductor device of claim 1 , further comprising a second floating gate, physically spaced apart from the first floating gate, wherein the first and second floating gates are on the substrate.
5 . The high voltage semiconductor device of claim 1 , wherein the floating gate is substantially coplanar with the gate electrode.
6 . The high voltage semiconductor device of claim 1 , wherein the floating gate has a substantially identical composition and a substantially identical height as the gate electrode.
7 . The high voltage semiconductor device of claim 6 , comprising a plurality of the floating gates, physically spaced apart from each other on the substrate, and between the gate electrode and the drain.
8 . The high voltage semiconductor device of claim 1 , further comprising:
an insulating spacer on a sidewall of the floating gate.
9 . The high voltage semiconductor device of claim 1 , further comprising:
a drain contact connecting the drain and a drain electrode;
a connection structure connected to the drain contact.
10 . The high voltage semiconductor device of claim 9 , wherein the connection structure has a substantially identical composition and a substantially identical height as the gate electrode.
11 . The high voltage semiconductor device of claim 10 , wherein the connection structure has a substantially uniform thickness and is substantially coplanar with the gate electrode.
12 . The high voltage semiconductor device of claim 9 , wherein one end of the insulating pattern is on an uppermost surface of the connection structure.
13 . The high voltage semiconductor device of claim 12 , wherein the floating gate has a substantially uniform thickness and is substantially coplanar with the gate electrode.
14 . The high voltage semiconductor device of claim 12 , wherein the floating gate has a substantially identical composition and a substantially identical height as the gate electrode.
15 . The high voltage semiconductor device of claim 14 , further comprising:
an insulating film between the floating gate and the substrate.
16 . The high voltage semiconductor device of claim 15 , comprising a plurality of the field plates, physically spaced apart from each other, on the insulating pattern.
17 . The high voltage semiconductor device of claim 4 , wherein the second plate has an opposite end on the second floating gate.
18 . The high voltage semiconductor device of claim 17 , wherein the conductive field plate further comprises a third plate spaced apart from the second plate and closer to the drain than is the second plate.
19 . The high voltage semiconductor device of claim 18 , wherein the opposite end of the second plate is on a first side of the second floating gate, and the one end of the third plate is on an opposite side of the second plate.
20 . The high voltage semiconductor device of claim 9 , wherein the gate electrode, the first floating gate, and the connection structure include conductive polysilicon, a metal, a conductive metal nitride, or a combination thereof.