IP Library › Granted Patent US 12690236
Granted Patent B2
US 12690236 · App. 19/009,354 · Granted Jul 21, 2026

Display device

Inventors: Yun Sik Joo (Goyang-si, KR); Seok Je Seong (Seongnam-si, KR); Kyung Hyun Baek (Suwon-si, KR); Hyeon Woo Shin (Hwaseong-si, KR)
Assignee: Samsung Display Co., Ltd.
H10D30/6755G02F1/136286G09G3/3233
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Quick Facts
Patent No.
US 12690236
App. No.
19/009,354
Granted
Jul 21, 2026
Kind
B2
Abstract

A display device includes a first transistor including a gate electrode, a second transistor including a lower gate electrode, an upper gate electrode, and a first end portion electrically connected to an end portion of the first transistor, a lower gate signal line extending in a first direction, an upper gate signal line disposed on the lower gate signal line and extending in a first direction, and a first connection pattern disposed on the upper gate signal line, electrically connecting the gate electrode and a second end portion of the second transistor, and intersecting the lower gate signal line and the upper gate signal line. An entirety of the upper gate signal line overlaps a part of the lower gate signal line in an overlapping area in which the lower gate signal line or the upper gate signal line overlaps the first connection pattern.

Claims (88)

1 . A display device comprising:

a first transistor including:

a first active layer disposed on a substrate, the first active layer including a first channel; and

a gate electrode disposed on the first active layer, the gate electrode overlapping the first channel;

an insulation layer disposed on the gate electrode;

a second transistor including:

a lower gate electrode disposed on the insulation layer;

a second active layer disposed on the lower gate electrode, the second active layer including a second channel overlapping the lower gate electrode, and a first end portion of the second active layer being electrically connected to an end portion of the first active layer; and

an upper gate electrode disposed on the second active layer, the upper gate electrode overlapping the second channel;

a lower gate signal line extending in a first direction, a portion of the lower gate signal line forming the lower gate electrode;

an upper gate signal line disposed on the lower gate signal line and extending in the first direction, a portion of the upper gate signal line forming the upper gate electrode; and

a first connection pattern disposed on the upper gate signal line and connecting the gate electrode and a second end portion of the second active layer, wherein

the first connection pattern intersects the lower gate signal line and the upper gate signal line in a plan view,

the lower gate signal line and the upper gate signal line extend and partially overlap each other, and

the lower gate signal line entirely overlaps the upper gate signal line in an intersecting area in which the first connection pattern intersects the lower gate signal line or the upper gate signal line and an intermediate area adjacent to the intersecting area in the first direction.

2 . The display device of claim 1 , wherein a width of the lower gate signal line in the intersecting area is greater than a width of the lower gate signal line in a non-intersecting area in which the first connection pattern does not intersect the lower gate signal line and the upper gate signal line and which is spaced apart from the intersecting area by the intermediate area between the intersecting area and the non-intersecting area.

3 . The display device of claim 2 , wherein a width of the upper gate signal line in the intersecting area is substantially equal to a width of the upper gate signal line in the non-intersecting area.

4 . The display device of claim 2 , wherein the second active layer of the second transistor is in the non-intersecting area.

5 . The display device of claim 1 , wherein a width of the upper gate signal line in the intersecting area is less than a width of the upper gate signal line in a non-intersecting area in which the first connection pattern does not intersect the lower gate signal line and the upper gate signal line and which is spaced apart from the intersecting area by the intermediate area between the intersecting area and the non-intersecting area.

6 . The display device of claim 5 , wherein a width of the lower gate signal line in the intersecting area is substantially equal to a width of the lower gate signal line in the non-intersecting area.

7 . The display device of claim 1 , wherein the first connection pattern intersects the lower gate signal line and the upper gate signal line in a second direction intersecting the first direction.

8 . The display device of claim 7 , wherein a difference between a width of the upper gate signal line and a width of the lower gate signal line in the intersecting area is greater than about 1 μm.

9 . The display device of claim 7 , wherein the first connection pattern extends in the second direction.

10 . A display device comprising:

a first transistor including:

a first active layer disposed on a substrate, the first active layer including a first channel; and

a gate electrode disposed on the first active layer, the gate electrode overlapping the first channel;

an insulation layer disposed on the gate electrode;

a second transistor including:

a lower gate electrode disposed on the insulation layer;

a second active layer disposed on the lower gate electrode, the second active layer including a second channel overlapping the lower gate electrode, and a first end portion of the second active layer being electrically connected to an end portion of the first active layer; and

an upper gate electrode disposed on the second active layer, the upper gate electrode overlapping the second channel;

a lower gate signal line extending in a first direction, a portion of the lower gate signal line forming the lower gate electrode;

an upper gate signal line disposed on the lower gate signal line and extending in the first direction, a portion of the upper gate signal line forming the upper gate electrode; and

a first connection pattern disposed on the upper gate signal line and connecting the gate electrode and a second end portion of the second active layer, wherein

the first connection pattern intersects the lower gate signal line and the upper gate signal line in a plan view,

the upper gate signal line and the lower gate signal line extend and partially overlap each other, and

the upper gate signal line entirely overlaps the lower gate signal line in an intersecting area in which the first connection pattern intersects the lower gate signal line or the upper gate signal line and an intermediate area adjacent to the intersecting area in the first direction.

11 . The display device of claim 10 , wherein a width of the lower gate signal line in the intersecting area is less than a width of the lower gate signal line in a non-intersecting area in which the first connection pattern does not intersect the lower gate signal line and the upper gate signal line and which is spaced apart from the intersecting area by the intermediate area between the intersecting area and the non-intersecting area.

12 . The display device of claim 11 , wherein a width of the upper gate signal line in the intersecting area is substantially equal to a width of the upper gate signal line in the non-intersecting area.

13 . The display device of claim 11 , wherein the second active layer of the second transistor is in the non-intersecting area.

14 . The display device of claim 10 , wherein a width of the upper gate signal line in the intersecting area is greater than a width of the upper gate signal line in a non-intersecting area in which the first connection pattern does not intersect the lower gate signal line and the upper gate signal line and which is spaced apart from the intersecting area by the intermediate area between the intersecting area and the non-intersecting area.

15 . The display device of claim 14 , wherein a width of the lower gate signal line in the intersecting area is substantially equal to a width of the lower gate signal line in the non-intersecting area.

16 . The display device of claim 10 , wherein the first connection pattern intersects the lower gate signal line and the upper gate signal line in a second direction intersecting the first direction.

17 . The display device of claim 16 , wherein a difference between a width of the lower gate signal line and a width of the upper gate signal line in the intersecting area is greater than about 1 μm.

18 . The display device of claim 16 , wherein the first connection pattern extends in the second direction.

19 . A mobile phone comprising:

a display device comprising:

a first transistor including:

a first active layer disposed on a substrate, the first active layer including a first channel; and

a gate electrode disposed on the first active layer, the gate electrode overlapping the first channel;

an insulation layer disposed on the gate electrode;

a second transistor including:

a lower gate electrode disposed on the insulation layer;

a second active layer disposed on the lower gate electrode, the second active layer including a second channel overlapping the lower gate electrode, and a first end portion of the second active layer being electrically connected to an end portion of the first active layer; and

an upper gate electrode disposed on the second active layer, the upper gate electrode overlapping the second channel;

a lower gate signal line extending in a first direction, a portion of the lower gate signal line forming the lower gate electrode;

an upper gate signal line disposed on the lower gate signal line and extending in the first direction, a portion of the upper gate signal line forming the upper gate electrode; and

a first connection pattern disposed on the upper gate signal line and connecting the gate electrode and a second end portion of the second active layer, wherein

the first connection pattern intersects the lower gate signal line and the upper gate signal line in a plan view,

the lower gate signal line and the upper gate signal line extend and partially overlap each other, and

the lower gate signal line entirely overlaps the upper gate signal line in an intersecting area in which the first connection pattern intersects the lower gate signal line or the upper gate signal line and an intermediate area adjacent to the intersecting area in the first direction.

20 . The mobile phone of claim 19 , wherein a width of the lower gate signal line in the intersecting area is greater than a width of the lower gate signal line in a non-intersecting area in which the first connection pattern does not intersect the lower gate signal line and the upper gate signal line and which is spaced apart from the intersecting area by the intermediate area between the intersecting area and the non-intersecting area.

21 . The mobile phone of claim 20 , wherein a width of the upper gate signal line in the intersecting area is substantially equal to a width of the upper gate signal line in the non-intersecting area.

22 . The mobile phone of claim 20 , wherein the second active layer of the second transistor is in the non-intersecting area.

23 . The mobile phone of claim 19 , wherein a width of the upper gate signal line in the intersecting area is less than a width of the upper gate signal line in a non-intersecting area in which the first connection pattern does not intersect the lower gate signal line and the upper gate signal line and which is spaced apart from the intersecting area by the intermediate area between the intersecting area and the non-intersecting area.

24 . The mobile phone of claim 23 , wherein a width of the lower gate signal line in the intersecting area is substantially equal to a width of the lower gate signal line in the non-intersecting area.

25 . A mobile phone comprising:

a display device comprising:

a first transistor including:

a first active layer disposed on a substrate, the first active layer including a first channel; and

a gate electrode disposed on the first active layer, the gate electrode overlapping the first channel;

an insulation layer disposed on the gate electrode;

a second transistor including:

a lower gate electrode disposed on the insulation layer;

a second active layer disposed on the lower gate electrode, the second active layer including a second channel overlapping the lower gate electrode, and a first end portion of the second active layer being electrically connected to an end portion of the first active layer; and

an upper gate electrode disposed on the second active layer, the upper gate electrode overlapping the second channel;

a lower gate signal line extending in a first direction, a portion of the lower gate signal line forming the lower gate electrode;

an upper gate signal line disposed on the lower gate signal line and extending in the first direction, a portion of the upper gate signal line forming the upper gate electrode; and

a first connection pattern disposed on the upper gate signal line and connecting the gate electrode and a second end portion of the second active layer, wherein

the first connection pattern intersects the lower gate signal line and the upper gate signal line in a plan view,

the upper gate signal line and the lower gate signal line extend and partially overlap each other, and

the upper gate signal line entirely overlaps the lower gate signal line in an intersecting area in which the first connection pattern intersects the lower gate signal line or the upper gate signal line and an intermediate area adjacent to the intersecting area in the first direction.

26 . The mobile phone of claim 25 , wherein a width of the lower gate signal line in the intersecting area is less than a width of the lower gate signal line in a non-intersecting area in which the first connection pattern does not intersect the lower gate signal line and the upper gate signal line and which is spaced apart from the intersecting area by the intermediate area between the intersecting area and the non-intersecting area.

27 . The mobile phone of claim 26 , wherein a width of the upper gate signal line in the intersecting area is substantially equal to a width of the upper gate signal line in the non-intersecting area.

28 . The mobile phone of claim 26 , wherein the second active layer of the second transistor is in the non-intersecting area.

29 . The mobile phone of claim 25 , wherein a width of the upper gate signal line in the intersecting area is greater than a width of the upper gate signal line in a non-intersecting area in which the first connection pattern does not intersect the lower gate signal line and the upper gate signal line and which is spaced apart from the intersecting area by the intermediate area between the intersecting area and the non-intersecting area.

30 . The mobile phone of claim 29 , wherein a width of the lower gate signal line in the intersecting area is substantially equal to a width of the lower gate signal line in the non-intersecting area.