Transistor structures with interleaved body contacts and gate contacts
Structures including a field-effect transistor field-effect and methods of forming a structure including a field-effect transistor. The structure comprises a trench isolation region in a substrate, and a body contact region that extends through the trench isolation region to the substrate. The structure further comprises a field-effect transistor including a gate connector, a first gate finger that extends from the gate connector, a second gate finger that extends from the gate connector, and a source/drain region disposed between the first gate finger and the second gate finger. The gate connector is positioned over the trench isolation region. The structure further comprises a gate contact coupled to the gate connector, and a body contact that penetrates through a portion of the gate connector to the body contact region.
1 . A structure comprising:
a substrate;
a first trench isolation region in the substrate;
a field-effect transistor including a first gate connector, a first gate finger that extends from the first gate connector, a second gate finger that extends from the first gate connector, and a source/drain region disposed between the first gate finger and the second gate finger, the first gate connector positioned over the first trench isolation region;
a first body contact region that extends through the first trench isolation region to the substrate;
a first gate contact coupled to the first gate connector; and
a first body contact that penetrates through a first portion of the first gate connector to the first body contact region.
2 . The structure of claim 1 further comprising:
a dielectric spacer between the first body contact and the first portion of the first gate connector.
3 . The structure of claim 1 further comprising:
a second body contact region that extends through the first trench isolation region to the substrate; and
a second body contact that penetrates through a second portion of the first gate connector to the second body contact region.
4 . The structure of claim 3 wherein the first trench isolation region comprises a dielectric material, and the first body contact region is separated from the second body contact region by the dielectric material of the first trench isolation region.
5 . The structure of claim 3 wherein the first body contact region is positioned adjacent to the second body contact region, and the first gate contact is positioned between the first body contact and the second body contact.
6 . The structure of claim 3 wherein the first body contact region is positioned adjacent to the second body contact region, and the first body contact is positioned between the first gate contact and the second body contact.
7 . The structure of claim 3 further comprising:
a second gate contact coupled to the first gate connector,
wherein the first body contact is positioned between the first gate contact and the second gate contact.
8 . The structure of claim 7 wherein the first body contact, the second body contact, the first gate contact, and the second gate contact are interleaved in an array along a length of the first gate connector.
9 . The structure of claim 1 further comprising:
a second trench isolation region in the substrate,
wherein the field-effect transistor includes a second gate connector, the first gate finger extends longitudinally from the first gate connector to the second gate connector, the second gate finger extends longitudinally from the first gate connector to the second gate connector, and the second gate connector is positioned over the second trench isolation region.
10 . The structure of claim 9 further comprising:
a second body contact region that extends through the second trench isolation region to the substrate; and
a second body contact that penetrates through a portion of the second gate connector to the second body contact region.
11 . The structure of claim 10 further comprising:
a second gate contact coupled to the second gate connector.
12 . The structure of claim 10 further comprising:
a first dielectric spacer between the first body contact and the first portion of the first gate connector; and
a second dielectric spacer between the second body contact and the portion of the second gate connector.
13 . The structure of claim 10 wherein the first body contact region and the second body contact region comprise a doped semiconductor material, and the first body contact and the second body contact comprise a metal.
14 . The structure of claim 1 wherein the first body contact region comprises a doped semiconductor material.
15 . The structure of claim 1 further comprising:
an external resistor; and
a power supply coupled by the external resistor to the first body contact.
16 . The structure of claim 1 wherein the first body contact region is aligned with the first gate finger.
17 . The structure of claim 1 wherein the first gate finger and the second gate finger comprise a first semiconductor material having a first conductivity type, and the first body contact region comprises a second semiconductor material having a second conductivity type opposite to the first conductivity type.
18 . The structure of claim 1 wherein the first body contact comprises a metal.
19 . The structure of claim 1 wherein the first body contact and the first gate contact comprise a metal.
20 . A method comprising:
forming a trench isolation region in a substrate;
forming a field-effect transistor including a gate connector, a first gate finger that extends from the gate connector, a second gate finger that extends from the gate connector, and a source/drain region disposed between the first gate finger and the second gate finger, wherein the gate connector is positioned over the trench isolation region;
forming a body contact region that extends through the trench isolation region to the substrate;
forming a gate contact coupled to the gate connector; and
forming a body contact that penetrates through a portion of the gate connector to the body contact region.