Electrically-conductive metal oxide film including a metal oxide having a first metal selected from a metal of group 4 of the periodic table and a second metal selected from a metal of group 13 of the periodic table, and semiconductor element and semiconductor device including the same
An electrically-conductive metal oxide film that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. An electrically-conductive metal oxide film comprising: a metal oxide as a major component, wherein the metal oxide includes at least a first metal selected from a metal of Group 4 of the periodic table and a second metal selected from a metal of Group 13 of the periodic table. The electrically-conductive metal oxide film is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.
1 . A multilayer structure comprising:
a semiconductor layer; and
a conductive metal oxide film and a metal layer that are positioned over the semiconductor layer, wherein
the conductive metal oxide film comprises a metal oxide as a major component,
the metal oxide includes at least a first metal selected from a metal of Group 4 of the periodic table and a second metal selected from a metal of Group 13 of the periodic table,
the metal layer comprises at least the first metal,
the semiconductor layer comprises at least the second metal and a dopant,
the conductive metal oxide film is in direct contact with the semiconductor layer,
where an amount of the first metal relative to a total amount of the first metal and the second metal is x in terms of a composition ratio in the metal oxide, x satisfies 0.5<x<1.0, and
the composition ratio of the first metal relative to the total amount of the first metal and the second metal contained in the metal oxide is greater than a composition ratio of the dopant to the semiconductor layer.
2 . The multilayer structure according to claim 1 ,
wherein the first metal is titanium.
3 . The multilayer structure according to claim 1 ,
wherein the second metal is gallium.
4 . The multilayer structure according to claim 1 ,
wherein the metal oxide is a crystalline metal oxide.
5 . The multilayer structure according to claim 4 ,
wherein the metal oxide has a corundum structure.
6 . The multilayer structure according to claim 1 ,
wherein the conductive metal oxide film is between the semiconductor layer and the metal layer.
7 . The multilayer structure according to claim 1 ,
wherein the conductive metal oxide film is in ohmic contact with the semiconductor layer.
8 . A semiconductor element, comprising:
a semiconductor layer; and
a conductive metal oxide film and a metal layer that are positioned over the semiconductor layer, wherein
the conductive metal oxide film comprises a metal oxide as a major component,
the metal oxide includes at least a first metal selected from a metal of Group 4 of the periodic table and a second metal selected from a metal of Group 13 of the periodic table,
the metal layer comprises at least the first metal,
the semiconductor layer comprises at least the second metal and a dopant,
the conductive metal oxide film is in direct contact with the semiconductor layer,
where an amount of the first metal relative to a total amount of the first metal and the second metal is x in terms of a composition ratio in the metal oxide, x satisfies 0.5<x<1.0, and
the composition ratio of the first metal relative to the total amount of the first metal and the second metal contained in the metal oxide is greater than a composition ratio of the dopant to the semiconductor layer.
9 . The semiconductor element according to claim 8 ,
wherein the semiconductor element is a vertical device.
10 . The semiconductor element according to claim 8 ,
wherein the semiconductor element is a power device.
11 . A semiconductor device, comprising:
the semiconductor element according to claim 8 ;
a board; and
a jointing material,
wherein the semiconductor element is bonded with the board by the jointing material, and
wherein the board is a circuit board or a heat dissipation board.
12 . The semiconductor device according to claim 11 ,
wherein the semiconductor device is a power module, an inverter, or a converter.
13 . The semiconductor device according to claim 11 ,
wherein the semiconductor device is a power card.
14 . A semiconductor system, comprising:
the semiconductor element according to claim 8 .