Semiconductor device having drive circuit configured to output voltages applied to plurality of gate electrodes
In a semiconductor device, a semiconductor element having a plurality of gate electrodes including a first gate electrode and a second gate electrode. An electrical connection member is electrically connected to a front surface electrode of the semiconductor element. A cell region of the semiconductor element includes a first cell region that allows a current to flow between the front surface electrode and a back surface electrode when the first gate electrode is applied with a voltage, and a second cell region that allows a current to flow between the front surface electrode and the back surface electrode when the second gate electrode is applied with a voltage. The semiconductor element and a control circuit are configured to generate a time difference in cutting off the current between the first cell region and the second cell region.
1 . A semiconductor device comprising:
a semiconductor element including a substrate, a front surface electrode disposed adjacent to a front surface of the substrate, a back surface electrode disposed adjacent to a back surface of the substrate, and a plurality of gate electrodes disposed adjacent to the front surface of the substrate, the semiconductor element being configured so that an electrical conduction and cutoff between the front surface electrode and the back surface electrode is controlled by application of voltages to the plurality of gate electrodes;
a control circuit including a connection circuit that connects a drive circuit and the plurality of gate electrodes, the drive circuit being configured to output the voltages applied to the plurality of gate electrodes; and
an electrical connection member disposed on a front surface side of the semiconductor element and electrically connected to the front surface electrode, wherein
the plurality of gate electrodes include a first gate electrode and a second gate electrode,
the semiconductor element has a cell region,
the cell region includes a first cell region that allows a current to flow between the front surface electrode and the back surface electrode when the first gate electrode is applied with the voltage, and a second cell region that allows a current to flow between the front surface electrode and the back surface electrode when the second gate electrode is applied with the voltage,
the semiconductor element and the control circuit are configured to generate a time difference in current cutoff between the first cell region and the second cell region at a time of cutting off the currents flowing through the first cell region and the second cell region,
the electrical connection member is disposed so as to cover a part of the front surface side of the semiconductor element,
the first cell region is disposed to be included in a part located outside of the part below the electrical connection member in the semiconductor element, and
the second cell region is disposed to be included in the part below the electrical connection member in the semiconductor element.
2 . The semiconductor device according to claim 1 , wherein
the semiconductor element and the control circuit are configured to cut off the current in the first cell region before the current in the second cell region is cut off, at the time of cutting off the currents flowing through the first cell region and the second cell region.
3 . The semiconductor device according to claim 1 , wherein
the part of the semiconductor element below the electrical connection member includes the second cell region other than the first cell region, and
the part of the semiconductor element outside of the part below the electrical connection member includes the first cell region and the second cell region.
4 . The semiconductor device according to claim 1 , wherein
the drive circuit and the first gate electrode are short-circuited, and
the drive circuit and the second gate electrode are connected to each other via a resistor.
5 . The semiconductor device according to claim 1 , wherein
the drive circuit and the first gate electrode are connected to each other via a first resistor, and
the drive circuit and the second gate electrode are connected to each other via a second resistor having a resistance value larger than that of the first resistor.
6 . The semiconductor device according to claim 1 , wherein
the drive circuit and the first gate electrode are connected to each other via a first resistor,
the drive circuit and the second gate electrode are connected to each other via a second resistor having a resistance value equal to that of the first resistor,
the first gate electrode and the surface electrode are connected via a circuit in which a fourth resistor and a first capacitor are connected in series, and
the second gate electrode and the surface electrode are connected to each other via a circuit in which a fifth resistor and a second capacitor having a capacitance larger than that of the first capacitor are connected in series.
7 . The semiconductor device according to claim 1 , wherein
the first gate electrode is connected to a first drive circuit,
the second gate electrode is connected to a second drive circuit, and
the first drive circuit has a driving capability higher than that of the second drive circuit.
8 . The semiconductor device according to claim 1 , wherein
the drive circuit is short-circuited to the first gate electrode and the second gate electrode, and
the first cell region has a threshold voltage larger than a threshold voltage of the second cell region.
9 . The semiconductor device according to claim 1 , wherein
the drive circuit and the first gate electrode are connected to each other via a first resistor,
the drive circuit and the second gate electrode are connected to each other via a second resistor having a resistance value equal to that of the first resistor, and
the first cell region has a threshold voltage larger than a threshold voltage of the second cell region.
10 . The semiconductor device according to claim 1 , wherein
the drive circuit and the first gate electrode are connected to each other via a first resistor,
the drive circuit and the second gate electrode are connected to each other via a second resistor having a resistance value equal to that of the first resistor,
the first gate electrode and the back surface electrode are connected to each other via a first bidirectional Zener diode,
the second gate electrode and the back surface electrode are connected to each other via a second bidirectional Zener diode,
a breakdown voltage of the first bidirectional Zener diode on a first gate electrode side is larger than a voltage applied to the first gate electrode in a normal operation of the semiconductor element,
a breakdown voltage of the second bidirectional Zener diode on a second gate electrode side is larger than a voltage applied to the second gate electrode in the normal operation of the semiconductor element,
a breakdown voltage of the first bidirectional Zener diode and a breakdown voltage of the second bidirectional Zener diode are equal to each other on a back surface electrode side, and
the first cell region has a threshold voltage larger than a threshold voltage of the second cell region.
11 . The semiconductor device according to claim 1 , wherein
the connection circuit is disposed in a region of the semiconductor element in which no cell is arranged.
12 . A semiconductor device comprising:
a semiconductor element including a substrate, a front surface electrode disposed adjacent to a front surface of the substrate, a back surface electrode disposed adjacent to a back surface of the substrate, and a plurality of gate electrodes disposed adjacent to the front surface of the substrate, the semiconductor element being configured so that an electrical conduction and cutoff between the front surface electrode and the back surface electrode is controlled by application of voltages to the plurality of gate electrodes;
a control circuit including a connection circuit that connects a drive circuit and the plurality of gate electrodes, the drive circuit being configured to output the voltages applied to the plurality of gate electrodes; and
an electrical connection member disposed on a front surface side of the semiconductor element and electrically connected to the front surface electrode, wherein
the plurality of gate electrodes include a first gate electrode and a second gate electrode,
the semiconductor element has a cell region,
the cell region includes a first cell region that allows a current to flow between the front surface electrode and the back surface electrode when the first gate electrode is applied with the voltage, and a second cell region that allows a current to flow between the front surface electrode and the back surface electrode when the second gate electrode is applied with the voltage,
the semiconductor element and the control circuit are configured to generate a time difference in current cutoff between the first cell region and the second cell region at a time of cutting off the currents flowing through the first cell region and the second cell region,
the drive circuit and the first gate electrode are connected to each other via a first resistor,
the drive circuit and the second gate electrode are connected to each other via a second resistor having a resistance value equal to that of the first resistor,
the second gate electrode and the back surface electrode are connected to each other via a bidirectional Zener diode, and
a breakdown voltage of the bidirectional Zener diode on a second gate electrode side is larger than a voltage applied to the second gate electrode in a normal operation of the semiconductor element.
13 . The semiconductor device according to claim 1 , wherein
the drive circuit and the first gate electrode are connected to each other via a first resistor,
the drive circuit and the second gate electrode are connected to each other via a second resistor having a resistance value equal to that of the first resistor,
the first gate electrode and the back surface electrode are connected to each other via a first bidirectional Zener diode,
the second gate electrode and the back surface electrode are connected to each other via a second bidirectional Zener diode,
a breakdown voltage of the first bidirectional Zener diode on a first gate electrode side is larger than a voltage applied to the first gate electrode in a normal operation of the semiconductor element;
a breakdown voltage of the second bidirectional Zener diode on a second gate electrode side is larger than a voltage applied to the second gate electrode in the normal operation of the semiconductor element; and
a breakdown voltage of the second bidirectional Zener diode on a back surface electrode side is smaller than a breakdown voltage of the first bidirectional Zener diode on a back surface electrode side.
14 . A semiconductor device comprising:
a semiconductor element including a substrate, a front surface electrode disposed adjacent to a front surface of the substrate, a back surface electrode disposed adjacent to a back surface of the substrate, and a plurality of gate electrodes disposed adjacent to the front surface of the substrate, the semiconductor element being configured so that an electrical conduction and cutoff between the front surface electrode and the back surface electrode is controlled by application of voltages to the plurality of gate electrodes;
a control circuit including a connection circuit that connects a drive circuit and the plurality of gate electrodes, the drive circuit being configured to output the voltages applied to the plurality of gate electrodes; and
an electrical connection member disposed on a front surface side of the semiconductor element and electrically connected to the front surface electrode, wherein
the plurality of gate electrodes include a first gate electrode and a second gate electrode,
the semiconductor element has a cell region,
the cell region includes a first cell region that allows a current to flow between the front surface electrode and the back surface electrode when the first gate electrode is applied with the voltage, and a second cell region that allows a current to flow between the front surface electrode and the back surface electrode when the second gate electrode is applied with the voltage,
the semiconductor element and the control circuit are configured to generate a time difference in current cutoff between the first cell region and the second cell region at a time of cutting off the currents flowing through the first cell region and the second cell region,
the drive circuit and the first gate electrode are connected to each other via a first resistor,
the drive circuit and the second gate electrode are connected to each other via a second resistor having a resistance value equal to that of the first resistor, and
the second gate electrode and the front surface electrode are connected to each other via a circuit in which a third resistor and a capacitor are connected in series.