IP Library › Granted Patent US 12690263
Granted Patent B2
US 12690263 · App. 18/129,576 · Granted Jul 21, 2026

Dual p-body dose reverse-conducting (DPD-RC) IGBT structure

Inventors: Zhibo Guo (San Jose, CA); Karthik Padmanabhan (Palo Alto, CA); Lingpeng Guan (San Jose, CA); Madhur Bobde (Sunnyvale, CA)
Assignee: ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
H10D84/617H10D8/422H10D12/441H10D12/481H10D64/112H10D64/117
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Quick Facts
Patent No.
US 12690263
App. No.
18/129,576
Granted
Jul 21, 2026
Kind
B2
Abstract

A reverse conducting IGBT comprising a substrate having a top side and a back side opposite the top side, one or more IGBT top side cells, one or more diode top side cells including, an IGBT back side collector region is formed in the back side of the substrate underneath the one or more IGBT top side cells, and a boundary area formed in the back side of the substrate underneath a portion of the one or more diode top side cells.

Claims (20)

1 . A reverse conducting IGBT comprising:

a substrate having a top side and a back side opposite the top side doped with ions of a first conductivity type wherein the first conductivity type is opposite a second conductivity type;

one or more IGBT top side cells including, an IGBT body region formed in the top side of the substrate and doped with ions of the second conductivity type, and an IGBT source region formed in the IGBT body region heavily doped with ions of the first conductivity type;

one or more diode top side cells including, a diode anode region formed in the top side substrate layer doped with ions of the second conductivity type;

an IGBT back side collector region formed in the back side of the substrate underneath the one or more IGBT top side cells and heavily doped with ions of the second conductivity type;

a boundary area formed in the back side of the substrate underneath a portion of the one or more diode top side cells and heavily doped with ions of the second conductivity type, wherein the boundary area is adjacent to or contiguous with the IGBT back side collector region, whereby the boundary area overlaps a portion of the one or more diode top side cells, wherein the size of the boundary area is chosen to significantly reduce the snapback voltage of the IGBT and the reverse recovery charge of the diode due to hole injection from nearby IGBT body diode regions into a diode substrate region.

2 . The reverse conducting IGBT of claim 1 further comprising a back side diode cathode region formed in the back side of the substrate underneath a portion of the one or more diode top side cells and heavily doped with ions of the first conductivity type.

3 . The reverse conducting IGBT of claim 2 wherein the boundary area separates the back side diode cathode region from the front side IGBT region.

4 . The reverse conducting IGBT of claim 2 wherein the back side diode cathode region is surrounded by the IGBT back side collector region and wherein the boundary area is between the back side diode cathode region and the IGBT back side collector region.

5 . The reverse conducting IGBT of claim 4 wherein the boundary area surrounds the back side diode cathode region.

6 . The reverse conducting IGBT of claim 2 wherein two or more diode cathode regions are separated by two or more corresponding boundary areas and a portion of the IGBT back side collector region.

7 . The reverse conducting IGBT of claim 1 wherein a buffer region is formed in the back side of the substrate and heavily doped with ions of the first conductivity type and wherein the IGBT back side collector region and boundary area are formed in the buffer region.

8 . The reverse conducting IGBT of claim 1 wherein the one or more IGBT top side cells further include a planar gate electrode over the top surface of the substrate and insulated from the substrate.

9 . The reverse conducting IGBT of claim 1 wherein the one or more IGBT top side cells further include a trench gate electrode formed in a trench in the top side of the substrate and insulated from the substrate.

10 . The reverse conducting IGBT of claim 1 wherein the one or more IGBT top side cells further include a planar gate electrode over the top surface of the substrate insulated from the substrate and an IGBT charge balancing electrode formed in a trench in the top side of the substrate insulated from the substrate.

11 . The reverse conducting IGBT of claim 10 wherein the one or more diode top cells further includes one or more diode charge balancing electrode formed in a trench in the top side of the substrate insulated from the substrate.

12 . The reverse conducting IGBT of claim 11 wherein the diode top cells further include one or more diode anode contact regions formed in the diode anode region heavily doped with ions of the second conductivity type.

13 . The reverse conducting IGBT of claim 1 wherein the one or more IGBT top side cells further include an IGBT emitter region heavily doped with ions of the second conductivity type and formed next to the IGBT source region.

14 . The reverse conducting IGBT of claim 1 wherein the diode anode region has a lower dopant concentration than the IGBT body region.

15 . The reverse conducting IGBT of claim 1 , wherein the diode anode region has a lower dose of ions of the second conductivity type than the IGBT body region.