Semiconductor light reception

1 . A device comprising:

a detector surface comprising reaction sites for supporting biological or chemical samples;

a plurality of spaced apart doped areas formed in a semiconductor formation, wherein the semiconductor formation receives excitation light and emission light from the detector surface, the plurality of spaced apart doped areas defining photodiodes;

a plurality of spaced apart doped regions formed in the semiconductor formation, wherein respective ones of the plurality of spaced apart doped regions are associated to respective ones of the doped areas, and wherein the respective ones of the doped regions are disposed in a receive light path of the excitation light and emission light intermediate the detector surface and the respective ones of the doped areas; and

wherein respective doped regions of the plurality of spaced apart doped regions formed in the semiconductor formation produce respective electric fields that impact a travel direction of electrons generated in the respective doped regions as a result of photons of the excitation light being absorbed in the respective doped regions, wherein the respective doped regions have a junction depth greater than an absorption depth of a center wavelength of the excitation light, wherein the junction depth of the respective doped regions is less than an absorption depth of a center wavelength of the emission light, wherein junctions of the respective doped regions are spaced apart from the respective associated doped areas, and wherein junctions of the respective associated doped areas are spaced apart from the respective doped regions.

2 . The device of claim 1 , wherein a junction depth of respective junctions defined by the respective doped regions is configured so that a percentage of photons at a center wavelength of the emission light absorbed at elevations of the semiconductor formation below the respective junctions is about 2× or more than a percentage of photons at a center wavelength of the excitation light absorbed at elevations of the semiconductor formation below the respective junctions.

3 . The device of claim 1 , wherein the respective doped regions are configured to cause drift of the electrons generated in the respective doped regions as a result of photons of the excitation light and emission light being absorbed in the respective doped regions in a direction toward a light entry surface of the semiconductor formation.

4 . The device of claim 1 , wherein the respective doped regions are dimensioned to feature a junction depth longer than an absorption depth of light in the blue wavelength band, the depth being shorter than an absorption depth of light in the red wavelength band.

5 . The device of claim 1 , wherein the respective doped regions comprise a first set of respective doped regions having a first junction depth, and a second set of respective doped regions having a second junction depth, the second junction depth being less than the first junction depth.

6 . The device of claim 1 , wherein the respective doped regions comprise a first set of respective doped regions having a first junction depth and being configured for wavelength separation of light in the green wavelength band, and a second set of respective doped regions having a second junction depth, the second junction depth being less than the first junction depth and being configured for wavelength separation of light in the blue wavelength band.

7 . The device of claim 1 , wherein the semiconductor formation comprises vertically extending deep trench isolation formations separating the respective doped regions, wherein a doped region of the plurality of spaced apart doped regions laterally contacts first and second ones of the vertically extending deep trench isolation formations.

8 . The device of claim 1 , wherein the respective doped regions define a light entry surface of the semiconductor formation, wherein the respective doped regions have a junction depth greater than an absorption depth of a center wavelength of the excitation light, and wherein the junction depth of the respective doped regions is less than an absorption depth of a center wavelength of the emission light, wherein the plurality of spaced apart doped areas and the plurality of spaced apart doped regions are separated by a vertical spacing distance, wherein the plurality of spaced apart doped areas have a common top elevation and the plurality of spaced apart doped regions have a common bottom elevation, and wherein the semiconductor formation is undoped between the common top elevation of the plurality of spaced apart doped areas and the common bottom elevation of the plurality of spaced apart doped regions, wherein respective ones of the plurality of spaced apart doped regions are aligned to respective ones of the doped areas, and wherein alignment of respective ones of the plurality of spaced apart doped regions to respective ones of the doped areas is characterized by vertically extending central axes of respective ones of the doped areas extending through respective ones of the doped regions, wherein respective ones of the reaction sites of the detector surface are associated to respective ones of the plurality of spaced apart doped areas, wherein the device includes a light energy exciter for illuminating sites of the reactions sites, wherein the device is controlled so that the light energy exciter directs excitation light toward a plurality of adjacent ones of the reaction sites simultaneously for simultaneous excitation of samples supported respectively by the plurality of adjacent ones of the reaction sites.

9 . The device of claim 8 , wherein the semiconductor formation on which the plurality of spaced apart doped areas and the plurality of spaced apart doped regions are formed includes a p-substrate or n-substrate.

10 . The device of claim 1 , wherein the semiconductor formation intermediate the respective doped regions and the respective associated doped areas forms junction interfaces with the respective doped areas.

11 . The device of claim 1 , wherein a bottom elevation of the respective doped regions defined by the junctions of the respective doped regions is spaced apart from a top elevation of the respective doped areas defined by the junctions of the respective doped areas.

12 . The device of claim 1 , wherein a bottom elevation of the respective doped regions defined by the junctions of the respective doped regions is spaced apart from a top elevation of the respective doped areas defined by the junctions of the respective doped areas, and wherein the respective doped regions are provided as n-doped regions on a p-substrate.

13 . A device comprising:

a detector surface for supporting biological or chemical samples;

an array of doped areas formed in a semiconductor formation, wherein the semiconductor formation receives excitation light and emission light from the detector surface, and wherein doped areas of the array of doped areas define photodiodes;

a doped region formed in the semiconductor formation in a receive light path of the excitation light and emission light intermediate the detector surface and a doped area of the array of doped areas;

an array of doped regions formed in the semiconductor formation, wherein the array of doped regions comprises the doped region, and wherein respective ones of doped regions defining the array of doped regions are respectively associated to one doped area of the array of doped areas; and

wherein the doped region is configured to impact a travel direction of electrons generated in the doped region as a result of photon absorption, and wherein junctions of the respective doped regions are spaced apart from the respective associated doped areas.

14 . The device of claim 13 , wherein the respective ones of doped regions defining the array of doped regions are respectively disposed in the receive light path of the excitation light and emission light intermediate the detector surface and one doped area of the array of doped areas.

15 . The device of claim 13 , wherein the doped region produces an electric field that impacts a travel direction of electrons generated in the doped region as a result of photon absorption.

16 . The device of claim 13 , wherein the doped region is configured to cause drift of the electrons generated in the doped region as a result of photons of the excitation light being absorbed in the doped region.

17 . The device of claim 13 , wherein a bottom elevation of the respective doped regions defined by the junctions of the respective doped regions is spaced apart from a top elevation of the respective doped areas defined by junctions of the respective doped areas.

18 . The device of claim 13 , wherein a bottom elevation of the respective doped regions defined by the junctions of the respective doped regions is spaced apart from a top elevation of the respective doped areas defined by junctions of the respective doped areas, and wherein the respective doped regions are provided as n-doped regions on a p-substrate.

19 . A device comprising:

a detector surface comprising reaction sites for supporting biological or chemical samples;

a plurality of spaced apart doped areas formed in a semiconductor formation, wherein the semiconductor formation receives excitation light and emission light from the detector surface, the plurality of spaced apart doped areas defining photodiodes;

a plurality of spaced apart doped regions formed in the semiconductor formation, wherein respective ones of the plurality of spaced apart doped regions are associated to respective ones of the doped areas, and wherein the respective ones of the doped regions are disposed in a receive light path of the excitation light and emission light intermediate the detector surface and the respective ones of the doped areas; and

wherein respective doped regions of the plurality of spaced apart doped regions formed in the semiconductor formation produce respective electric fields that impact a travel direction of electrons generated in the respective doped regions as a result of photons of the excitation light being absorbed in the respective doped regions, and wherein the semiconductor formation intermediate the respective doped regions and the respective associated doped areas forms junction interfaces with the respective doped areas.