Image sensing device including multi-thickness substrate
An image sensing device includes a semiconductor substrate including photoelectric conversion regions that correspond to unit pixels, respectively, each photoelectric conversion region generating photocharges through conversion of incident light, and a plurality of first color filters disposed over a first surface of the semiconductor substrate to transmit incident light of a first color to the photoelectric conversion regions of first unit pixels. The first unit pixels have different substrate thicknesses from one another.
1 . An image sensing device comprising:
a semiconductor substrate including photoelectric conversion regions, each photoelectric conversion region generating photocharges through conversion of incident light; and
a plurality of first color filters disposed over a first surface of the semiconductor substrate to transmit incident light of a first color to the photoelectric conversion regions of first unit pixels,
wherein the first unit pixels have different substrate thicknesses from one another.
2 . The image sensing device according to claim 1 , wherein the plurality of first color filters is arranged adjacent to each other in an (N×N) array, where N is a natural number equal to or greater than 2.
3 . The image sensing device according to claim 1 , further comprising:
a plurality of second color filters arranged adjacent to each other over the first surface of the semiconductor substrate to transmit incident light of a second color to the photoelectric conversion regions of second unit pixels; and
a plurality of third color filters arranged adjacent to each other over the first surface of the semiconductor substrate to transmit incident light of a third color to the photoelectric conversion regions of third unit pixels,
wherein,
the second unit pixels have different substrate thicknesses from one another, and
the third unit pixels have different substrate thicknesses from one another.
4 . The image sensing device according to claim 3 , wherein the first to third color filters are arranged in a Bayer pattern.
5 . The image sensing device according to claim 1 , wherein the semiconductor substrate includes a plurality of trenches etched in a direction away from the first surface.
6 . The image sensing device according to claim 5 , wherein the plurality of trenches has different depths from one another.
7 . The image sensing device according to claim 5 , further comprising:
an anti-reflection layer formed between the semiconductor substrate and the plurality of first color filters and filling the plurality of trenches.
8 . The image sensing device according to claim 1 , wherein the first unit pixels include photoelectric conversion regions having different sizes from one another.
9 . An image sensing device comprising:
a pixel array including a plurality of sub-pixel blocks, each sub-pixel block including a plurality of unit pixels configured to generate photocharges through photoelectric conversion of incident light corresponding to a certain color,
wherein,
the plurality of unit pixels of the sub-pixel block includes photoelectric conversion regions that are located within a substrate to perform the photoelectric conversion of the incident light and have different sizes from one another.
10 . The image sensing device according to claim 9 , wherein:
the substrate includes a plurality of trenches etched in a direction away from a surface of the substrate through which the incident light is received.
11 . The image sensing device according to claim 10 , wherein the plurality of trenches has different depths from one another.
12 . The image sensing device according to claim 10 , wherein each of the plurality of unit pixels includes an anti-reflection layer formed over the substrate and filling the plurality of trenches.
13 . The image sensing device according to claim 9 , wherein the plurality of sub-pixel blocks includes:
a first sub-pixel block in which a plurality of first unit pixels that generates photocharges through photoelectric conversion of incident light of a first color is arranged adjacent to each other;
a second sub-pixel block in which a plurality of second unit pixels that generates photocharges through photoelectric conversion of incident light of a second color is arranged adjacent to each other; and
a third sub-pixel block in which a plurality of third unit pixels that generates photocharges through photoelectric conversion of incident light of a third color is arranged adjacent to each other.
14 . The image sensing device according to claim 13 , wherein the first to third sub-pixel blocks are arranged in a Bayer pattern.
15 . The image sensing device according to claim 13 , wherein each of the first to third sub-pixel blocks includes a plurality of trenches.
16 . The image sensing device according to claim 15 , wherein the plurality of trenches has different depths from one another.
17 . The image sensing device according to claim 9 , wherein the photoelectric conversion regions have different thicknesses from one another.
18 . The image sensing device according to claim 9 , wherein:
the pixel array includes a plurality of sub-pixel arrays, and
wherein,
the plurality of sub-pixel blocks having a same color in each sub-pixel array are formed to have substrate thicknesses of a same pattern.
19 . The image sensing device according to claim 9 , wherein one of the plurality of unit pixels has a region whose depth is greater than those of regions of remaining unit pixels that are defined with corresponding trenches.
20 . The image sensing device according to claim 9 , wherein the plurality of unit pixels is arranged adjacent to each other in an (N×N) array, where N is a natural number equal to or greater than 2.