IP Library › Granted Patent US 12690288
Granted Patent B2
US 12690288 · App. 18/550,282 · Granted Jul 21, 2026

Imaging element and imaging device

Inventors: Hiroshi Takahashi (Kanagawa, JP); Shigehiro Ikehara (Kanagawa, JP); Tadashi Iijima (Kanagawa, JP)
Assignee: Sony Semiconductor Solutions Corporation
H10F39/807H10F39/1865H10F39/811
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Quick Facts
Patent No.
US 12690288
App. No.
18/550,282
Granted
Jul 21, 2026
Kind
B2
Abstract

An imaging element according to the present disclosure includes a pixel, an overflow path, a pixel isolation unit, a pixel isolation electrode, an in-pixel isolation unit, and an in-pixel isolation electrode. The pixel includes a plurality of photoelectric conversion units formed in a semiconductor substrate having an interconnect region arranged on a front surface side and performs photoelectric conversion of incident light. The overflow path mutually transfers charges between the plurality of photoelectric conversion units. The pixel isolation unit is at a boundary of the pixel. The pixel isolation electrode is in the pixel isolation unit, and a first bias voltage is applied to the pixel isolation electrode. The in-pixel isolation unit isolates the plurality of photoelectric conversion units from each other. The in-pixel isolation electrode is arranged in the in-pixel isolation unit, and a second bias voltage is applied to the in-pixel isolation electrode.

Claims (50)

1 . An imaging element, comprising:

a pixel that includes a plurality of photoelectric conversion units that is formed in a semiconductor substrate having an interconnect region arranged on a front surface side and performs photoelectric conversion of incident light from a subject to generate charges;

an overflow path that mutually transfers charges between the plurality of photoelectric conversion units;

a pixel isolation unit that is arranged at a boundary of the pixel;

a pixel isolation electrode that is arranged in the pixel isolation unit and to which a first bias voltage is applied;

an in-pixel isolation unit that isolates the plurality of photoelectric conversion units from each other;

an in-pixel isolation electrode that is arranged in the in-pixel isolation unit and to which a second bias voltage is applied;

a charge holding unit that holds the generated charges;

a plurality of charge transfer units that are each arranged in a corresponding one of the plurality of photoelectric conversion units and configured to transfer charges generated by the photoelectric conversion units to the charge holding unit to cause the charge holding unit to hold the charges; and

an image signal generation unit that generates an image signal on a basis of the held charges.

2 . The imaging element according to claim 1 , wherein the second bias voltage for adjusting a potential barrier of the overflow path is applied to the in-pixel isolation electrode.

3 . The imaging element according to claim 1 ,

wherein the plurality of charge transfer units performs collective transfer, in which charges respectively generated by the plurality of photoelectric conversion units are commonly transferred to the charge holding unit and the charges generated by the plurality of photoelectric conversion units are simultaneously and collectively held in the charge holding unit, and individual transfer, in which charges respectively generated by the plurality of photoelectric conversion units are individually transferred to the charge holding unit, and

wherein the image signal generation unit generates the image signal on a basis of the charges collectively held in the charge holding unit by the collective transfer, and generates a plurality of phase difference signals for performing pupil division on the subject and detecting an image-plane phase difference on a basis of the respective charges individually held in the charge holding unit by the individual transfer.

4 . The imaging element according to claim 1 , wherein the overflow path is arranged between the in-pixel isolation unit and the pixel isolation unit.

5 . The imaging element according to claim 1 ,

wherein the pixel includes a plurality of the in-pixel isolation units, and

wherein the overflow path is arranged between the plurality of in-pixel isolation units.

6 . The imaging element according to claim 3 , wherein the second bias voltage applied to the in-pixel isolation electrode when the charges transferred by the collective transfer are generated is different from that when the charges transferred by the individual transfer are generated.

7 . The imaging element according to claim 1 , wherein the second bias voltage for adjusting an accumulation capacity of the charge in the photoelectric conversion unit is applied to the in-pixel isolation electrode.

8 . The imaging element according to claim 1 , wherein the in-pixel isolation unit is arranged on a back surface side of the semiconductor substrate.

9 . The imaging element according to claim 8 , further comprising an in-pixel isolation region that is a semiconductor region arranged on the front surface side of the semiconductor substrate in the pixel and isolating the plurality of photoelectric conversion units from each other.

10 . The imaging element according to claim 8 , further comprising:

a second in-pixel isolation unit that is the in-pixel isolation unit arranged on the front surface side of the semiconductor substrate; and

a second in-pixel isolation electrode that is the in-pixel isolation electrode arranged in the second in-pixel isolation unit.

11 . The imaging element according to claim 10 , wherein the second bias voltage different from that to the in-pixel isolation electrode is applied to the second in-pixel isolation electrode.

12 . The imaging element according to claim 8 , further comprising an in-pixel isolation unit interconnect that is arranged on the back surface side of the semiconductor substrate and applies the second bias voltage to the in-pixel isolation electrode.

13 . The imaging element according to claim 12 , wherein the in-pixel isolation unit interconnect is made of a transparent member.

14 . The imaging element according to claim 13 , wherein the in-pixel isolation unit interconnect is formed to cover the plurality of photoelectric conversion units.

15 . The imaging element according to claim 1 , wherein the in-pixel isolation unit and the in-pixel isolation electrode are formed to penetrate the semiconductor substrate.

16 . The imaging element according to claim 1 , wherein the first bias voltage for adjusting an accumulation capacity of the charge in the photoelectric conversion unit is applied to the pixel isolation electrode.

17 . The imaging element according to claim 1 , wherein the pixel isolation unit is arranged on a back surface side of the semiconductor substrate.

18 . The imaging element according to claim 17 , further comprising:

a second pixel isolation unit that is the pixel isolation unit arranged on the front surface side of the semiconductor substrate; and

a second pixel isolation electrode that is the pixel isolation electrode arranged in the second pixel isolation unit.

19 . The imaging element according to claim 17 , further comprising a pixel isolation unit interconnect that is arranged on the back surface side of the semiconductor substrate and transmits the first bias voltage to the pixel isolation unit.

20 . The imaging element according to claim 1 , wherein the pixel isolation unit and the pixel isolation electrode are formed to penetrate the semiconductor substrate.

21 . The imaging element according to claim 1 , wherein the in-pixel isolation electrode is made of a transparent member.

22 . The imaging element according to claim 1 , wherein the pixel isolation electrode is made of a transparent member.

23 . An imaging, device comprising:

a pixel that includes a plurality of photoelectric conversion units that is formed in a semiconductor substrate having an interconnect region arranged on a front surface side and performs photoelectric conversion of incident light from a subject to generate charges;

an overflow path that mutually transfers charges between the plurality of photoelectric conversion units;

a pixel isolation unit that is arranged at a boundary of the pixel;

a pixel isolation electrode that is arranged in the pixel isolation unit and to which a first bias voltage is applied;

an in-pixel isolation unit that isolates the plurality of photoelectric conversion units from each other;

an in-pixel isolation electrode that is arranged in the in-pixel isolation unit and to which a second bias voltage is applied;

a charge holding unit that holds the generated charge;

a plurality of charge transfer units that are each arranged in a corresponding one of the plurality of photoelectric conversion units and configured to transfer charges generated by the photoelectric conversion units to the charge holding unit to cause the charge holding unit to hold the charges;

an image signal generation unit that generates an image signal on a basis of the held charges; and

a processing circuit that processes the generated image signal.