IP Library Granted Patent US 12690289
Granted Patent B2
US 12690289 · App. 18/600,460 · Granted Jul 21, 2026

Solar cell and photovoltaic module

Inventors: Huimin Li (Haining, CN); Menglei Xu (Haining, CN); Jie Yang (Haining, CN); Xinyu Zhang (Haining, CN)
Assignees: ZHEJIANG JINKO SOLAR CO., LTD.; JINKO SOLAR CO., LTD.
H10F77/12H10F10/10
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Quick Facts
Patent No.
US 12690289
App. No.
18/600,460
Granted
Jul 21, 2026
Kind
B2
Abstract

Embodiments of the present disclosure relate to a solar cell and a photovoltaic module. The solar cell includes: a substrate, a tunneling layer formed on a rear surface of the substrate, and a doped conductive layer formed on the tunneling layer. The tunneling layer includes first regions and second regions, the first regions interleave with the second regions in a first direction, and the first regions include first dopant atoms. The doped conductive layer includes first doped regions formed on the first regions and second doped regions formed on the second regions. The first doped regions and the second doped regions have different doping types, the first doped regions include the first dopant atoms, and an atomic percentage of the first dopant atoms in the first doped regions is lower than an atomic percentage of the first dopant atoms in the first regions.

Claims (36)

1 . A solar cell, comprising:

a substrate, having a front surface and a rear surface opposite to each other;

a tunneling layer, formed on the rear surface of the substrate; and

a doped conductive layer, formed on the tunneling layer;

wherein the tunneling layer includes first regions and second regions, the first regions interleave with the second regions in a first direction, and the first regions include first dopant atoms;

wherein the doped conductive layer includes first doped regions and second doped regions, each first doped region of the first doped regions is formed on a respective first region of the first regions, and each second doped region of the second doped regions is formed on a respective second region of the second regions; and

wherein the first doped regions have a doping type different from a doping type of the second doped regions, the first doped regions include the first dopant atoms, and an atomic percentage of the first dopant atoms in the first doped regions is lower than an atomic percentage of the first dopant atoms in the first regions.

2 . The solar cell according to claim 1 , wherein a ratio of the atomic percentage of the first dopant atoms in the first regions to the atomic percentage of the first dopant atoms in the first doped regions ranges from 1 to 5.

3 . The solar cell according to claim 2 , wherein the atomic percentage of the first dopant atoms in the first regions ranges from 1% to 10%.

4 . The solar cell according to claim 2 , wherein the atomic percentage of the first dopant atoms in the first doped regions ranges from 0.2% to 5%.

5 . The solar cell according to claim 1 , wherein in a direction perpendicular to the rear surface of the substrate and away from the substrate, the atomic percentage of the first dopant atoms in the first doped regions reduces in gradient.

6 . The solar cell according to claim 1 , wherein one respective first region of the first regions includes a first portion contacting with the substrate, and an atomic percentage of the first dopant atoms in the first portion is higher than the atomic percentage of the first dopant atoms in the respective first region.

7 . The solar cell according to claim 6 , wherein the atomic percentage of the first dopant atoms in the first portion ranges from 2% to 20%.

8 . The solar cell according to claim 6 , wherein in a direction perpendicular to the rear surface of the substrate, a ratio of a thickness of the first portion to a thickness of the respective first region ranges from 0.25 to 0.5.

9 . The solar cell according to claim 1 , wherein one respective first region of the first regions includes a second portion contacting with a corresponding first doped region, and an atomic percentage of the first dopant atoms in the second portion is higher than the atomic percentage of the first dopant atoms in the respective first region.

10 . The solar cell according to claim 9 , wherein the atomic percentage of the first dopant atoms in the second portion ranges from 2% to 20%.

11 . The solar cell according to claim 9 , wherein in a direction perpendicular to the rear surface of the substrate, a ratio of a thickness of the second portion to a thickness of the respective first portion ranges from 0.25 to 0.5.

12 . A photovoltaic module, comprising:

at least one cell string, formed by connecting a plurality of solar cells;

at least one encapsulation layer, configured to cover a surface of the at least one cell string; and

at least one cover plate, configured to cover a surface of the at least one encapsulation layer away from the at least one cell string;

wherein each solar cell of the plurality of solar cells includes:

a substrate, having a front surface and a rear surface opposite to each other;

a tunneling layer, formed on the rear surface of the substrate; and

a doped conductive layer, formed on the tunneling layer;

wherein the tunneling layer includes first regions and second regions, the first regions interleave with the second regions in a first direction, and the first regions include first dopant atoms;

wherein the doped conductive layer includes first doped regions and second doped regions, each first doped region of the first doped regions is formed on a respective first region of the first regions, and each second doped region of the second doped regions is formed on a respective second region of the second regions; and

wherein the first doped regions have a doping type different from a doping type of the second doped regions, the first doped regions include the first dopant atoms, and an atomic percentage of the first dopant atoms in the first doped regions is lower than an atomic percentage of the first dopant atoms in the first regions.

13 . The photovoltaic module according to claim 12 , wherein a ratio of the atomic percentage of the first dopant atoms in the first regions to the atomic percentage of the first dopant atoms in the first doped regions ranges from 1 to 5.

14 . The photovoltaic module according to claim 13 , wherein the atomic percentage of the first dopant atoms in the first regions ranges from 1% to 10%.

15 . The photovoltaic module according to claim 13 , wherein the atomic percentage of the first dopant atoms in the first doped regions ranges from 0.2% to 5%.

16 . The photovoltaic module according to claim 12 , wherein one respective first region of the first regions includes a first portion contacting with the substrate, and an atomic percentage of the first dopant atoms in the first portion is higher than the atomic percentage of the first dopant atoms in the respective first region.

17 . The photovoltaic module according to claim 16 , wherein the atomic percentage of the first dopant atoms in the first portion ranges from 2% to 20%.

18 . The photovoltaic module according to claim 16 , wherein in a direction perpendicular to the rear surface of the substrate, a ratio of a thickness of the first portion to a thickness of the respective first region ranges from 0.25 to 0.5.

19 . The photovoltaic module according to claim 12 , wherein one respective first region of the first regions includes a second portion contacting with a corresponding first doped region, and an atomic percentage of the first dopant atoms in the second portion is higher than the atomic percentage of the first dopant atoms in the respective first region.

20 . The photovoltaic module according to claim 19 , wherein in a direction perpendicular to the rear surface of the substrate, a ratio of a thickness of the second portion to a thickness of the respective first portion ranges from 0.25 to 0.5.