Photoelectric conversion element, method for manufacturing photoelectric conversion element, solar cell module, and paddle
A photoelectric conversion element includes: a back electrode layer formed on a substrate; a photoelectric conversion layer facing a light receiving surface side of the back electrode layer and containing a chalcogen semiconductor; and a current collector electrically connected to the light receiving surface side of the photoelectric conversion layer, in which a first region including an interface between the back electrode layer and the photoelectric conversion layer and a second region not including an interface between the back electrode layer and the photoelectric conversion layer are provided on the substrate, and a joined portion between the current collector and a wiring member is formed in the second region.
1 . A photoelectric conversion element comprising:
a back electrode layer formed on a substrate;
a photoelectric conversion layer facing a light receiving surface side of the back electrode layer and containing a chalcogen semiconductor;
a transparent electrode layer facing the light receiving surface side of the photoelectric conversion layer; and
a current collector electrically connected to the transparent electrode layer, wherein
a first region including an interface between the back electrode layer and the photoelectric conversion layer and a second region not including the interface between the back electrode layer and the photoelectric conversion layer are provided on the substrate,
the second region includes an insulating layer closer to the substrate side than the current collector,
the current collector and a wiring member overlap on the insulating layer in the second region;
a joined portion between the current collector and the wiring member is formed on the insulating layer in the second region, and
the transparent electrode layer is not disposed between the current collector and the insulating layer in the second region.
2 . The photoelectric conversion element according to claim 1 , wherein
in the second region, the insulating layer is formed on the substrate without interposing the back electrode layer.
3 . The photoelectric conversion element according to claim 1 , wherein
in the second region, the insulating layer is formed on the back electrode layer.
4 . The photoelectric conversion element according to claim 1 , wherein
the insulating layer covers an end surface of the photoelectric conversion layer in a planar direction.
5 . The photoelectric conversion element according to claim 1 , wherein
the insulating layer partially covers the first region above the light receiving surface side of the photoelectric conversion layer.
6 . The photoelectric conversion element according to claim 1 , wherein
a material of the insulating layer includes at least one of Al 2 O 3 , Y 2 O 3 , ZrO 2 , MgO, HfO 2 , Bi 2 O 3 , TiO 2 , ZnO, In 2 O 3 , SnO 2 , Nb 2 O 5 , Ta 2 O 5 , SiO 2 , and Ca 3 (PO 4 ) 2 .
7 . The photoelectric conversion element according to claim 1 , wherein
a material of the current collector includes at least one of indium tin oxide, indium titanium oxide, indium zinc oxide, tin zinc doped indium oxide, tungsten doped indium oxide, hydrogen doped indium oxide, indium gallium zinc oxide, zinc tin oxide, fluorine doped tin oxide, aluminum doped zinc oxide, boron doped zinc oxide, gallium doped zinc oxide, Ni, Ti, Cr, Mo, Al, Ag, and Cu.
8 . A method for manufacturing a photoelectric conversion element, the method comprising:
forming a back electrode layer on a substrate;
forming a photoelectric conversion layer containing a chalcogen semiconductor on a light receiving surface side of the back electrode layer;
forming a transparent electrode layer on the light receiving surface side of the photoelectric conversion layer;
partially removing the photoelectric conversion layer and the transparent electrode layer to form a first region including an interface between the back electrode layer and the photoelectric conversion layer and a second region not including the interface between the back electrode layer and the photoelectric conversion layer on the substrate;
forming an insulating layer in the second region; and
forming, on the insulating layer in the second region, a joined portion between a current collector and a wiring member, the current collector being electrically connected to the transparent electrode layer;
wherein
the second region includes the insulating layer closer to the substrate side than the current collector,
the current collector and the wiring member overlap on the insulating layer in the second region, and
the transparent electrode layer is not disposed between the current collector and the insulating layer in the second region.
9 . The method for manufacturing a photoelectric conversion element according to claim 8 , further comprising
removing the back electrode layer in the second region after partially removing the photoelectric conversion layer and the transparent electrode layer.
10 . A solar cell module comprising the photoelectric conversion element according to claim 1 .
11 . A paddle comprising a plurality of solar cell modules, wherein each solar cell module of the plurality of solar cell modules is the solar cell module according to claim 10 and the plurality of solar cell modules is connected so as to be deformable from a folded state or a rolled state to a flatly unfolded state.