IP Library › Granted Patent US 12690296
Granted Patent B2
US 12690296 · App. 18/229,007 · Granted Jul 21, 2026

Method of manufacturing light-emitting element

Inventors: Jia-Zhe Liu (Hsinchu City, TW); Chih-Yuan Chuang (Hsinchu City, TW)
Assignee: GLOBALWAFERS CO., LTD.
H10H20/815H10D30/015H10D30/475H10D62/10H10D62/8503H10H20/01335H10H20/0137H10H20/825
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Quick Facts
Patent No.
US 12690296
App. No.
18/229,007
Granted
Jul 21, 2026
Kind
B2
Abstract

A method of manufacturing a light-emitting element, including: provide a substrate; form a nucleation layer above the substrate; form a buffer layer above the nucleation layer; form a first nitride layer being in contact with the buffer layer above the buffer layer; form a second nitride layer being in contact with the first nitride layer above the first nitride layer; form a first semiconductor layer above the second nitride layer; form a light-emitting layer above the first semiconductor layer; form a second semiconductor layer above the light-emitting layer. The light-emitting layer is adapted to emit light when electrons and holes recombine. A film thickness of the first nitride layer is smaller than a film thickness of the second nitride layer, and a growth pressure of the first nitride layer is smaller than a growth pressure of the second nitride layer.

Claims (18)

1 . A method of manufacturing a light-emitting element, comprising:

providing a substrate;

forming a nucleation layer above the substrate;

forming a buffer layer above the nucleation layer;

forming a first nitride layer above the buffer layer, wherein the first nitride layer is in contact with the buffer layer;

forming a second nitride layer above the first nitride layer, wherein the second nitride layer is in contact with the first nitride layer;

forming a first semiconductor layer above the second nitride layer;

forming a light-emitting layer above the first semiconductor layer, wherein the light-emitting layer is adapted to emit light when electrons and holes recombine; and

forming a second semiconductor layer above the light-emitting layer;

wherein a film thickness of the first nitride layer is smaller than a film thickness of the second nitride layer, and a growth pressure of the first nitride layer is smaller than a growth pressure of the second nitride layer;

wherein the growth pressure of the first nitride layer is smaller than a growth pressure of the first semiconductor layer.

2 . The method as claimed in claim 1 , wherein the growth pressure of the first nitride layer is smaller than or equal to 125 torr.

3 . The method as claimed in claim 1 , wherein the growth pressure of the second nitride layer is greater than or equal to 180 torr and is smaller than or equal to 300 torr.

4 . The method as claimed in claim 1 , wherein the growth pressure of the second nitride layer is at least twice the growth pressure of the first nitride layer.

5 . The method as claimed in claim 1 , wherein a growth temperature of the first nitride layer is smaller than a growth temperature of the second nitride layer and a growth temperature of the first semiconductor layer.

6 . The method as claimed in claim 1 , wherein the buffer layer is made of aluminum-gallium nitride (AlGaN) and has a surface aluminum (Al) concentration of 25%±10%.

7 . The method as claimed in claim 1 , wherein the first semiconductor layer comprises n-type gallium nitride and has a thickness of 1 μm and an electron concentration of 1×10 18 cm-3.

8 . The method as claimed in claim 1 , wherein the first nitride layer and the second nitride layer comprise gallium nitride (GaN).