Light-emitting device and method for manufacturing the same

1 . A light-emitting device, comprising:

a substrate, provided with at least one light guide channel through the substrate, wherein each of the at least one light guide channel comprises a first opening and a second opening opposite to the first opening, an area of a section of the second opening is greater than an area of a section of the first opening, the substrate comprises a first substrate and a second substrate stacked, and the second substrate is configured to control a direction of light output through the light guide channel; and

a light-emitting structure, provided at a side of the substrate where the first opening is located, wherein the light-emitting structure comprises at least one light-emitting unit, each of the at least one light guide channel corresponds to at least one light-emitting unit;

wherein the first opening is located in the first substrate, and the second opening is located in the second substrate;

wherein a material of the first substrate comprises any of sapphire, silicon carbide, aluminum nitride and monocrystalline silicon with [111] crystal orientation; and a material of the second substrate comprises monocrystalline silicon with [100] crystal orientation or monocrystalline silicon with [110] crystal orientation; and

wherein the light guide channel comprises a first channel located in the first substrate and a light diffusion channel located in the second substrate.

2 . The light-emitting device of claim 1 , wherein the substrate is a silicon-on-insulator composite substrate.

3 . The light-emitting device of claim 1 , wherein the light diffusion channel includes a first side, a second side opposite to the first side, a third side and a fourth side opposite to the third side, and the first side, the second side, the third side and the fourth side all have [111] crystal orientation.

4 . The light-emitting device of claim 3 , wherein a first cross-section perpendicular to the first side and the second side in a first direction has a first trapezoidal shape, and a second cross-section perpendicular to the third side and the fourth side in the first direction has a second trapezoidal shape, wherein the first direction is a direction from the first opening to the second opening.

5 . The light-emitting device of claim 3 , wherein a section of the light diffusion channel parallel to the substrate is rectangular.

6 . The light-emitting device of claim 1 , wherein the light diffusion channel comprises a fifth side, a sixth side opposite to the fifth side, a seventh side and an eighth side opposite to the seventh side, and the fifth side, the sixth side, the seventh side and the eighth side all have [111] crystal orientation.

7 . The light-emitting device of claim 6 , wherein the fifth side and the sixth side are parallel to each other, and a cross-section perpendicular to the seventh side and the eighth side in a first direction has a trapezoidal shape, wherein the first direction is a direction from the first opening to the second opening.

8 . The light-emitting device of claim 1 , wherein

the light-emitting structure comprises a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked, and the first semiconductor layer is disposed at a side of the substrate where the first opening is located;

each of the at least one light-emitting unit comprises a first electrode and a second electrode, the first semiconductor layer is electrically connected to a driving substrate through the first electrode, and the second semiconductor layer is electrically connected to the driving substrate through the second electrode.

9 . The light-emitting device of claim 8 , further comprising: a first reflective layer provided at a side of the second semiconductor layer away from the active layer.

10 . The light-emitting device of claim 9 , further comprising: a transparent conductive layer provided between the second semiconductor layer and the first reflective layer.

11 . The light-emitting device of claim 9 , further comprising a second reflective layer, which is located on a side wall of the light guide channel.

12 . The light-emitting device of claim 8 , wherein the active layer comprises a quantum well structure, the quantum well structure comprises a first light-emitting layer and a second light-emitting layer, and a wavelength of a light emitted from the first light-emitting layer is different from a wavelength of a light emitted from the second light-emitting layer.

13 . The light-emitting device of claim 1 , further comprising: a wavelength conversion medium layer formed in the light guide channel, and the wavelength conversion medium layer comprises quantum dots or phosphor.

14 . The light-emitting device of claim 1 , wherein the light-emitting structure comprises a plurality of light-emitting units, and the light-emitting device further comprises an isolation member provided between adjacent light-emitting units.

15 . A method for manufacturing a light-emitting device, comprising:

providing a substrate, wherein the substrate comprises a first substrate and a second substrate stacked;

forming a light-emitting structure on the substrate, wherein the light-emitting structure comprises at least one light-emitting unit; and

etching the substrate to form at least one light guide channel penetrated through the first substrate and the second substrate, wherein the second substrate is configured to control a direction of light output through the light guide channel, each of the at least one light guide channel corresponds to at least one light-emitting unit, each of the at least one light guide channel comprises a first opening and a second opening opposite to the first opening, and an area of a section of the second opening is greater than an area of a section of the first opening;

wherein the first opening is located in the first substrate, and the second opening is located in the second substrate;

wherein a material of the first substrate comprises any of sapphire, silicon carbide, aluminum nitride and monocrystalline silicon with [111] crystal orientation; and a material of the second substrate comprises monocrystalline silicon with [100] crystal orientation or monocrystalline silicon with [110] crystal orientation;

wherein the light guide channel comprises a first channel located in the first substrate and a light diffusion channel located in the second substrate.

16 . The method of claim 15 , wherein etching the substrate to form at least one light guide channel penetrated through the first substrate and the second substrate comprises:

etching the second substrate to form the light diffusion channel in the second substrate, wherein the light diffusion channel comprises a first side, a second side opposite to the first side, a third side and a fourth side opposite to the third side, a distance between the first side and the second side gradually increases in a first direction, and a distance between the third side and the fourth side gradually increases in the first direction, wherein the first direction is a direction from the first opening to the second opening, and the first side, the second side, the third side and the fourth side all have [111] crystal orientation; and

etching the first substrate to form the first channel penetrated through the first substrate, so as to form the light guide channel by the first channel and the light diffusion channel.

17 . The method of claim 15 , wherein etching the substrate to form at least one light guide channel penetrated through the first substrate and the second substrate comprises:

etching the second substrate to form the light diffusion channel in the second substrate, wherein the light diffusion channel comprises a fifth side, a sixth side opposite to the fifth side, a seventh side and an eighth side opposite to the seventh side, the fifth side and the sixth side are parallel to each other, and a distance between the seventh side and the eighth side gradually increases in a first direction, wherein the first direction is a direction from the first opening to the second opening, and the fifth side, the sixth side, the seventh side and the eighth side all have [111] crystal orientation; and

etching the first substrate to form the first channel penetrated through the first substrate, so as to form the light guide channel by the first channel and the light diffusion channel.

18 . The method of claim 15 , wherein forming the light-emitting structure on the substrate comprises:

sequentially growing a first semiconductor layer, an active layer and a second semiconductor layer on the first substrate; and

forming a first electrode and a second electrode, such that the first semiconductor layer is electrically connected to a driving substrate through the first electrode, and the second semiconductor layer is electrically connected to the driving substrate through the second electrode.

19 . The method of claim 15 , further comprising: forming a wavelength conversion medium layer in the light guide channel, wherein the wavelength conversion medium layer comprises quantum dots or phosphor.