IP Library Granted Patent US 12690300
Granted Patent B2
US 12690300 · App. 17/992,656 · Granted Jul 21, 2026

Light-emitting element and display device including the same

Inventors: Dong Gyun Kim (Seoul, KR); Jun Bo Sim (Suwon-si, KR); Hee Yeon Yoo (Hwaseong-si, KR); Jeong In Choi (Anyang-si, KR); Chul Jong Yoo (Seongnam-si, KR); Yo Han Lee (Hwaseong-si, KR); Sung Ae Jang (Busan, KR); Hyun Min Cho (Seoul, KR); Hyung Rae Cha (Seoul, KR)
Assignee: Samsung Display Co., Ltd.
H10H20/8312H10H20/857H10W90/00
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12690300
App. No.
17/992,656
Granted
Jul 21, 2026
Kind
B2
Abstract

A light-emitting element comprises a core comprising a first semiconductor layer, a second semiconductor layer provided on the first semiconductor layer, and an emissive layer provided between the first semiconductor layer and the second semiconductor layer, and a first element insulating film around a side surface of the core, wherein the first element insulating film comprises a composite of an insulating member and an elastic member.

Claims (50)

1 . A light-emitting element comprising:

a core comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an emissive layer between the first semiconductor layer and the second semiconductor layer; and

a first element insulating film around a side surface of the core,

wherein the first element insulating film comprises a composite of an insulating member and an elastic member, such that a space between materials of the insulating member is filled with the elastic member, and

wherein the first element insulating film comprises an interface formed between the insulating member and the elastic member, and the interface directly contacts a side surface of the emissive layer.

2 . The light-emitting element of claim 1 , wherein the elastic member is around a border of the materials of the insulating member.

3 . The light-emitting element of claim 1 , wherein a portion of the elastic member is around a side surface of the first semiconductor layer.

4 . The light-emitting element of claim 3 , wherein the insulating member is on the elastic member and a portion of the insulating member is around a side surface of the second semiconductor layer.

5 . The light-emitting element of claim 3 , wherein the first element insulating film comprises a plurality of layers of the insulating member and the elastic member arranged alternately with each other.

6 . The light-emitting element of claim 1 , wherein the insulating member comprises at least one of amorphous SiO 2 or amorphous Al 2 O 3 .

7 . The light-emitting element of claim 1 , wherein the elastic member comprises at least one of graphene or carbon nanotubes.

8 . The light-emitting element of claim 1 , wherein the elastic member comprises an insulating material having an elastic modulus of 150 GPa or more.

9 . The light-emitting element of claim 8 , wherein the elastic member comprises at least one of HfO 2 or ZrO 2 .

10 . A light-emitting element comprising:

a core comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an emissive layer between the first semiconductor layer and the second semiconductor layer;

a first element insulating film around a side surface of the core; and

a second element insulating film around an outer surface of the first element insulating film,

wherein the first element insulating film comprises a crystalline insulating material,

wherein an elastic modulus of the first element insulating film is greater than an elastic modulus of the second element insulating film, wherein the first element insulating film comprises a composite of an insulating member and an elastic member, such that a space between materials of the insulating member is filled with the elastic member, and wherein the first element insulating film comprises an interface formed between the insulating member and the elastic member, and the interface directly contacts a side surface of the emissive layer.

11 . The light-emitting element of claim 10 , wherein the first element insulating film has an elastic modulus of 150 GPa or more.

12 . The light-emitting element of claim 11 , wherein the first element insulating film comprises at least one of HfO 2 or ZrO 2 .

13 . The light-emitting element of claim 12 , wherein the first element insulating film comprises a composite material doped with at least one of aluminum (AI), scandium (Sc), yttrium (Y), lanthanum (La), lutetium (Lu), or lawrencium (Lr).

14 . The light-emitting element of claim 13 , wherein the second element insulating film comprises at least one of amorphous SiO 2 or amorphous Al 2 O 3 .

15 . A display device comprising:

a first electrode and a second electrode on a substrate and spaced apart from each other;

light-emitting elements between the first electrode and the second electrode, each light-emitting element having a first end and a second end;

a first connection electrode in contact with the first end of each of the light-emitting elements; and

a second connection electrode in contact with the second end of each of the light-emitting elements,

wherein each of the light-emitting elements comprises:

a core comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an emissive layer between the first semiconductor layer and the second semiconductor layer; and

a first element insulating film around a side surface of the core,

wherein the first element insulating film comprises a crystalline insulating material with an elastic modulus of 150 GPa or more,

wherein the first element insulating film further comprises an amorphous insulating material, and forms a composite of the amorphous insulating material and the crystalline insulating material, and

wherein the first semiconductor layer, the emissive layer, and the second semiconductor layer are sequentially arranged in a direction crossing a thickness direction of the substrate.

16 . The display device of claim 15 , wherein the first element insulating film comprises at least one of HfO 2 or ZrO 2 .

17 . The display device of claim 15 , wherein each of the light-emitting elements comprises a second element insulating film around a side surface of the first element insulating film,

wherein the second element insulating film comprises an amorphous insulating material with an elastic modulus of 150 GPa or less, and

wherein the core, the first element insulating film, and the second element insulating film are sequentially arranged in a thickness direction of the substrate.

18 . The display device of claim 17 , wherein the second element insulating film comprises at least one of SiO 2 or Al 2 O 3 .

19 . The display device of claim 15 , wherein the first element insulating film comprises a plurality of layers of the amorphous insulating material and the crystalline insulating material arranged alternately with each other.

20 . An electronic device comprising:

a first electrode and a second electrode on a substrate and spaced apart from each other;

light-emitting elements between the first electrode and the second electrode, each light-emitting element having a first end and a second end;

a first connection electrode in contact with the first end of each of the light-emitting elements; and

a second connection electrode in contact with the second end of each of the light-emitting elements,

wherein each of the light-emitting elements comprises:

a core comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an emissive layer between the first semiconductor layer and the second semiconductor layer; and

a first element insulating film around a side surface of the core, wherein the first element insulating film comprises a crystalline insulating material with an elastic modulus of 150 GPa or more,

wherein the first element insulating film further comprises an amorphous insulating material, and forms a composite of the amorphous insulating material and the crystalline insulating material, and

wherein the first semiconductor layer, the emissive layer, and the second semiconductor layer are sequentially arranged in a direction crossing a thickness direction of the substrate.