Micro semiconductor device and micro semiconductor structure

1 . A micro semiconductor device, comprising:

an epitaxial structure; and

an optical layer, disposed on the epitaxial structure, wherein the optical layer is a multi-layer film structure comprising a first film layer, a second film layer, and a third film layer disposed between the first film layer and the second film layer, wherein a refractive index of the first film layer and a refractive index of the second film layer are both greater than a refractive index of the third film layer, a thickness of the third film layer is greater than a thickness of the first film layer and a thickness of the second film layer, and a reflectivity of the optical layer to an external light of the micro semiconductor device is greater than a self-luminescence of the epitaxial structure of the micro semiconductor device,

wherein the optical layer further comprises an optical stacking layer disposed between the first film layer and the second film layer, the optical stacking layer comprises at least one high refractive index layer and at least one low refractive index layer disposed in pairs and alternately, a thickness of the at least one low refractive index layer is greater than a thickness of the at least one high refractive index layer,

wherein the thickness of the first film layer or the thickness of the second film layer is 60% or less of the thickness of the at least one high refractive index layer.

2 . The micro semiconductor device according to claim 1 , wherein a reflectivity of the external light is greater than twice a reflectivity of the self-luminescence.

3 . The micro semiconductor device according to claim 2 , wherein a wavelength of the external light is from 240 nanometers to 400 nanometers.

4 . The micro semiconductor device according to claim 2 , wherein the optical layer has a cut-off wavelength from 380 nanometers to 440 nanometers.

5 . The micro semiconductor device according to claim 1 , wherein the epitaxial structure has an upper surface and a lower surface opposite to each other and a peripheral surface connecting the upper surface and the lower surface, and the self-luminescence emerges from the upper surface, wherein the optical layer is disposed on the upper surface, the lower surface, or a combination of the upper surface and the lower surface.

6 . The micro semiconductor device according to claim 5 , further comprising:

a visible light reflective layer, disposed on the upper surface of the epitaxial structure with the optical layer disposed on the lower surface, or, disposed on the lower surface of the epitaxial structure with the optical layer disposed on the upper surface.

7 . The micro semiconductor device according to claim 5 , further comprising:

an external light transmitting layer, disposed on the upper surface of the epitaxial structure with the optical layer disposed on the lower surface, or, disposed on the lower surface of the epitaxial structure with the optical layer disposed on the upper surface.

8 . The micro semiconductor device according to claim 5 , wherein the optical layer comprises a first sub-optical layer and a second sub-optical layer, the first sub-optical layer and the second sub-optical layer are located on the upper surface and the lower surface, respectively, and the external light reflected by the first sub-optical layer and the second sub-optical layer has different wavelengths.

9 . A micro semiconductor structure, comprising:

a substrate; and

at least one micro semiconductor device, disposed on the substrate, wherein the at least one micro semiconductor device comprises:

an epitaxial structure; and

an optical layer, disposed on the epitaxial structure, wherein the optical layer is a multi-layer film structure comprising a first film layer, a second film layer, and a third film layer disposed between the first film layer and the second film layer, wherein a refractive index of the first film layer and a refractive index of the second film layer are both greater than a refractive index of the third film layer, a thickness of the third film layer is greater than a thickness of the first film layer and a thickness of the second film layer, and a reflectivity of the optical layer to an external light of the micro semiconductor device is greater than a self-luminescence of the epitaxial structure of the micro semiconductor device,

wherein the optical layer further comprises an optical stacking layer disposed between the first film layer and the second film layer, the optical stacking layer comprises at least one high refractive index layer and at least one low refractive index layer disposed in pairs and alternately, a thickness of the at least one low refractive index layer is greater than a thickness of the at least one high refractive index layer,

wherein the thickness of the first film layer or the thickness of the second film layer is 60% or less of the thickness of the at least one high refractive index layer.

10 . The micro semiconductor structure according to claim 9 , further comprising:

a sacrificial layer, disposed between the optical layer and the substrate, wherein the substrate is a temporary substrate, and a Young's modulus of the optical layer is greater than a Young's modulus of the sacrificial layer.

11 . The micro semiconductor structure according to claim 9 , wherein the substrate is a circuit substrate, the at least one micro semiconductor device is a plurality of micro semiconductor devices with light in different colors, and the micro semiconductor devices with light in different colors comprise the optical stacking layer with different thicknesses, respectively.