Display device and manufacturing method of display device
View Patent ↗The present disclosure provides a display device and a manufacturing method thereof. The display device includes: a driving substrate; light-emitting elements electrically connected to the driving substrate through a connecting part, and first intervals formed between two adjacent light-emitting elements; a light-shielding layer filled in the first intervals between the two adjacent light-emitting elements; and an encapsulation substrate disposed corresponding to the light-emitting elements. The encapsulation substrate includes a buffer layer, and a surface of a light-emitting part facing away from the driving substrate is in contact with to the buffer layer.
1 . A display device, wherein the display device comprises:
a driving substrate;
at least two light-emitting elements, the light-emitting elements comprising a light-emitting part and a connecting part formed on the light-emitting part, the light-emitting element electrically connected to the driving substrate through the connecting part, adjacent two of the light-emitting elements emitting light with different colors, and a first interval formed between the adjacent two of the light-emitting elements;
a light-shielding layer filled in the first interval between the adjacent two of the light-emitting elements, wherein the light-shielding layer is in direct contact with both of the adjacent two of the light-emitting elements; and
an encapsulation substrate disposed corresponding to the light-emitting elements; the encapsulation substrate comprising a buffer layer, and a surface of the light-emitting part away from the driving substrate being in contact with the buffer layer;
wherein the display device further comprises a first encapsulation layer formed on the driving substrate and cladding at least one portion of the connecting part;
wherein a top surface of the light-shielding layer facing away from the first encapsulation layer is flush with a surface of the light-emitting part of the light-emitting elements facing away from the first encapsulation layer;
wherein the encapsulation substrate further comprises: a first substrate disposed facing the light-emitting elements; the buffer layer being formed on a side of the first substrate facing the light-emitting elements; and a supporting layer formed on the first substrate, disposed around the buffer layer, and directly supported on the driving substrate;
wherein the buffer layer has a plurality of second intervals, positioned vertically opposite to the first interval, wherein a portion of the light-shielding layer is also filled in the second intervals; wherein one end of the light-shielding layer in the second interval is in direct contact with the light-shielding layer in the first interval, and another end is in direct contact with the first substrate;
wherein a third interval is formed between the supporting layer, the buffer layer, and the light-emitting elements, and a portion of the light-shielding layer is also filled in the third interval; wherein one end of the light-shielding layer in the third interval is in contact with the first encapsulation layer, and another end is in direct contact with the first substrate.
2 . The display device in claim 1 , wherein the first encapsulation layer is transparent.
3 . The display device in claim 2 , wherein a light transmittance of the first encapsulation layer is greater than 99%.
4 . The display device in claim 1 , wherein a light transmittance of the buffer layer is greater than or equal to 95%.
5 . The display device in claim 1 , wherein the buffer layer is in contact with the light-emitting elements and the light-shielding layer.
6 . The display device in claim 1 , wherein one end of the light-shielding layer in the third interval is in contact with the first encapsulation layer, and another end is in contact with the buffer layer.
7 . The display device in claim 1 , wherein the driving substrate comprises a second substrate and a thin film transistor array layer formed on the second substrate; the connecting part of the light-emitting elements is electrically connected to the thin film transistor array layer, and a light transmittance of the thin film transistor array layer is greater than 80%.