Radiation-emitting component and method for producing a radiation-emitting component

1 . A radiation-emitting component comprising:

a radiation-emitting emitter having a front side;

an optical element arranged on the front side; and

a dielectric filter arranged between the front side and the optical element,

wherein the optical element comprises a plurality of reflection surfaces and a plurality of radiation exit surfaces,

wherein each of the reflection surfaces has an angle of inclination of between 45° and 80°, inclusive, with respect to the front side,

wherein the emitter is configured to emit electromagnetic radiation generated that is reflected at the reflection surfaces towards the radiation exit surfaces and emerges from the optical element via the radiation exit surfaces,

wherein a main emission direction of the radiation-emitting component includes an exit angle between 10° and 80°, inclusive, with the front side, and

wherein the dielectric filter is configured to transmit radiation having an entrance angle within a first angular range and to reflect radiation having an entrance angle within a second angular range.

2 . The radiation-emitting component according to claim 1 , further comprising a mirror layer arranged on each of the reflection surfaces.

3 . The radiation-emitting component according to claim 1 , wherein the emitter is configured to emit at least 70% of a total radiation emitted by the emitter through the front side of the emitter.

4 . The radiation-emitting component according to claim 1 ,

wherein the emitter is a Lambertian emitter, and

wherein the emitter is an inorganic semiconductor chip or an organic light-emitting diode element.

5 . A method for producing the radiation-emitting component according to claim 1 , the method comprising:

providing at least one radiation-emitting emitter;

forming at least one optical element; and

forming, in a base material, a plurality of reflection surfaces and a plurality of radiation exit surfaces such that each of the reflection surfaces has an angle of inclination of between 45° and 80°, inclusive, with respect to a main extension plane of the optical element,

wherein the optical element is arranged at the front side of the emitter.

6 . The method according to claim 5 ,

wherein a plurality of emitters is provided in a first compound,

wherein a plurality of optical elements is fabricated in a second compound on the first compound,

wherein a compound of the first and second compounds is separated into a plurality of components, and

wherein each optical element is assigned exactly one emitter.

7 . The method according to claim 5 ,

wherein the optical element is produced on a carrier element, and

wherein the carrier element is applied to the front side of the emitter with a side facing away from the optical element.

8 . The method according to claim 5 , further arranging a mirror layer on each of the reflection surfaces.

9 . The method according to claim 5 , further comprising:

arranging at least one dielectric filter at the front side before arranging the at least one optical element,

wherein the dielectric filter is configured to transmit radiation having the entrance angle within the first angular range and to reflect radiation having the entrance angle within the second angular range.

10 . A radiation-emitting component comprising:

a radiation-emitting emitter having a front side; and

an optical element arranged on the front side,

wherein the optical element comprises a plurality of reflection surfaces and a plurality of radiation exit surfaces,

wherein each of the reflection surfaces has an angle of inclination of between 45° and 80°, inclusive, with respect to the front side,

wherein the emitter is configured to emit electromagnetic radiation generated that is reflected at the reflection surfaces towards the radiation exit surfaces and emerges from the optical element via the radiation exit surfaces,

wherein a main emission direction of the radiation-emitting component includes an exit angle between 10° and 80°, inclusive, with the front side, and

a surface of a semiconductor body of the radiation-emitting emitter facing the front side is roughened and a roughness of the semiconductor body is filled with a planarization layer comprising SiO2.

11 . The radiation-emitting component according to claim 10 , further comprising a mirror layer arranged on each of the reflection surfaces.

12 . The radiation-emitting component according to claim 10 , wherein the emitter is configured to emit at least 70% of a total radiation emitted by the emitter through the front side of the emitter.

13 . The radiation-emitting component according to claim 10 ,

wherein the emitter is a Lambertian emitter, and

wherein the emitter is an inorganic semiconductor chip or an organic light-emitting diode element.