IP Library › Granted Patent US 12690313
Granted Patent B2
US 12690313 · App. 17/835,368 · Granted Jul 21, 2026

Light-emitting diode

Inventors: Xiushan Zhu (Xiamen, CN); Yan Li (Xiamen, CN)
Assignee: Xiamen San'an Optoelectronics Co., Ltd.
H10H20/857H10H20/815H10H20/832H10H20/835H10H20/856H10H29/8322H10H29/8325
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Quick Facts
Patent No.
US 12690313
App. No.
17/835,368
Granted
Jul 21, 2026
Kind
B2
Abstract

A light-emitting diode includes a light-emitting structure, a first insulating layer and a first electrode layer. The first electrode layer is formed on the first insulating layer and in the first opening, and is electrically connected to the first semiconductor layer through the first opening. The first electrode layer includes a first metal reflective layer and a stress adjustment layer. The first metal reflective layer in the first opening is in contact with the first semiconductor layer, and located between the first semiconductor layer and the stress adjustment layer. The first metal reflective layer and the stress adjustment layer contain a same metal element, and a content of the same metal element in the first metal reflective layer is greater than that in the stress adjustment layer.

Claims (36)

1 . A light-emitting diode, comprising:

a light-emitting structure, including a first semiconductor layer, an active layer and a second semiconductor layer stacked sequentially;

a first insulating layer, covering the light-emitting structure and defined with a first opening to expose a portion of the first semiconductor layer; and

a first electrode layer, formed on the first insulating layer and in the first opening, and electrically connected to the first semiconductor layer through the first opening; wherein the first electrode layer includes a first metal reflective layer and a stress adjustment layer, and the first metal reflective layer is located between the first semiconductor layer and the stress adjustment layer;

wherein the first metal reflective layer and the stress adjustment layer contain a same metal element, a content of the same metal element in the first metal reflective layer is greater than that in the stress adjustment layer, and the same metal element is aluminum;

wherein the light-emitting diode further comprises a metal adhesive layer, and the metal adhesive layer is disposed between the exposed portion of the first semiconductor layer in the first opening and a portion of the first metal reflective layer in the first opening;

wherein the first electrode layer further comprises a diffusion prevention layer, an etch stop layer, and an adhesive layer; and

wherein the first metal reflective layer is located between the metal adhesive layer and the diffusion prevention layer, the diffusion prevention layer is located between the first metal reflective layer and the stress adjustment layer, the stress adjustment layer is located between the diffusion prevention layer and the etch stop layer, and the etch stop layer is located between the stress adjustment layer and the adhesive layer.

2 . The light-emitting diode according to claim 1 , wherein the first metal reflective layer in the first opening is in contact with the first semiconductor layer.

3 . The light-emitting diode according to claim 1 , further comprising:

a first pad electrode, electrically connected to the first semiconductor layer, wherein the first electrode layer on the first insulating layer is in electrical contact with the first pad electrode; and

a second electrode, electrically connected to the second semiconductor layer.

4 . The light-emitting diode according to claim 1 , wherein a reflectivity of the same metal element is greater than 70%.

5 . The light-emitting diode according to claim 1 , wherein the stress adjustment layer comprises an aluminum alloy.

6 . The light-emitting diode according to claim 1 , wherein the stress adjustment layer is an aluminum-copper alloy.

7 . The light-emitting diode according to claim 1 , wherein the first metal reflective layer has a thickness in a range of 100 nanometers (nm) to 500 nm, and the stress adjustment layer has a thickness in a range of 100 nm to 500 nm.

8 . The light-emitting diode according to claim 1 , wherein the diffusion prevention layer comprises at least one metal selected from the group consisting of titanium, platinum, nickel, copper, chromium, zinc, palladium, rhodium, iridium, ruthenium, and tungsten.

9 . The light-emitting diode according to claim 8 , wherein the diffusion prevention layer has a thickness in a range of 50 nm to 300 nm.

10 . The light-emitting diode according to claim 1 , wherein the etch stop layer comprises at least one metal selected from the group consisting of chromium, gold, platinum, tungsten, nickel and titanium.

11 . The light-emitting diode according to claim 10 , wherein the etch stop layer has a thickness in a range of 5 nm to 2000 nm.

12 . The light-emitting diode according to claim 10 , wherein the etch stop layer includes a platinum layer having a thickness in a range of 5 nm to 300 nm.

13 . The light-emitting diode according to claim 1 , wherein the adhesive layer has a thickness in a range of 2 nm to 50 nm, and the adhesive layer comprises at least one metal selected from the group consisting of titanium and chromium.

14 . The light-emitting diode according to claim 1 , wherein the metal adhesive layer comprises at least one metal selected from the group consisting of chromium, titanium, and nickel.

15 . The light-emitting diode according to claim 14 , wherein the metal adhesive layer has a thickness in a range of 0.5 nm to 10 nm.

16 . A light-emitting diode, comprising:

a light-emitting structure, including a first semiconductor layer, an active layer and a second semiconductor layer stacked sequentially;

a first insulating layer, covering the light-emitting structure and defined with a first opening to expose a portion of the first semiconductor layer; and

a first electrode layer, formed on the first insulating layer and in the first opening, and electrically connected to the first semiconductor layer through the first opening; wherein the first electrode layer includes a first metal reflective layer and a stress adjustment layer, and the first metal reflective layer is located between the first semiconductor layer and the stress adjustment layer;

wherein the first metal reflective layer and the stress adjustment layer contain a same metal element, a content of the same metal element in the first metal reflective layer is greater than that in the stress adjustment layer, and the same metal element is aluminum;

wherein the first electrode layer further comprises an etch stop layer and an adhesive layer, and the etch stop layer is located between the first metal reflective layer and the adhesive layer;

wherein the light-emitting diode further comprises:

a second insulating layer, covering the first electrode layer and being defined with a second opening to expose a portion of the first electrode layer, wherein the adhesive layer is in contact with the second insulating layer;

a first pad electrode, electrically connected to the first semiconductor layer, wherein the first electrode layer on the first insulating layer is in electrical contact with the first pad electrode; and

a second pad electrode, being electrically connected to the second semiconductor layer;

wherein the adhesive layer in the first electrode layer is defined with a through hole at least partially overlapped with the second opening; and

wherein the first pad electrode is in contact with the etch stop layer through the second opening and the through hole.