Method of making a semiconductor package with graphene for die attach
A semiconductor device has a substrate with a die pad. A conductive material is disposed on the die pad. The conductive material includes a plurality of graphene-coated metal balls in a matrix. A semiconductor die is disposed on the conductive material. The conductive material is sintered using an infrared laser. A bond wire is formed between the semiconductor die and substrate. An encapsulant is deposited over the semiconductor die and bond wire.
1 . A method of making a semiconductor device, comprising:
providing a substrate including a die pad;
disposing a conductive material on the die pad, wherein the conductive material includes a plurality of graphene-coated metal balls in a matrix;
disposing a semiconductor die on the conductive material, wherein the graphene-coated metal balls are each interconnected as one graphene-coated metal ball of the plurality of graphene-coated metal balls physically contacts another graphene-coated metal ball of the plurality of graphene-coated metal balls within the conductive material to form a continuous thermal conduction path through the graphene-coated metal balls between the surface of the die pad and semiconductor die;
sintering the conductive material using an infrared laser;
forming a bond wire between the semiconductor die and substrate; and
depositing an encapsulant over the semiconductor die and bond wire.
2 . The method of claim 1 , further including sintering the conductive material after disposing the semiconductor die on the conductive material.
3 . The method of claim 1 , further including sintering the conductive material for thirty seconds or less.
4 . The method of claim 1 , wherein the semiconductor die includes a light emitting diode.
5 . The method of claim 1 , further including forming a solder bump on the substrate opposite the semiconductor die.
6 . The method of claim 1 , further including depositing the conductive material by jet printing.
7 . A method of making a semiconductor device, comprising:
providing a substrate;
disposing a conductive material over the substrate, wherein the conductive material includes a plurality of graphene-coated metal balls; and
disposing a semiconductor die over the conductive material, wherein the graphene-coated metal balls are each interconnected as one graphene-coated metal ball of the plurality of graphene-coated metal balls physically contacts another graphene-coated metal ball of the plurality of graphene-coated metal balls within the conductive material to form a continuous thermal conduction path through the graphene-coated metal balls between the surface of the die pad and semiconductor die.
8 . The method of claim 7 , further including sintering the conductive material using an infrared laser.
9 . The method of claim 8 , further including sintering the conductive material after disposing the semiconductor die over the conductive material.
10 . The method of claim 8 , further including sintering the conductive material for thirty seconds or less.
11 . The method of claim 7 , wherein the semiconductor die includes a light emitting diode.
12 . The method of claim 7 , further including forming a solder bump on the substrate opposite the semiconductor die.
13 . The method of claim 7 , further including depositing the conductive material by jet printing.
14 . A method of making a semiconductor device, comprising:
providing a substrate including a die pad;
disposing a conductive material on the die pad, wherein the conductive material includes a plurality of graphene-coated metal balls in a matrix;
disposing a semiconductor die on the conductive material, wherein the graphene-coated metal balls are each interconnected as one graphene-coated metal ball of the plurality of graphene-coated metal balls physically contacts another graphene-coated metal ball of the plurality of graphene-coated metal balls within the conductive material to form a continuous thermal conduction path through the graphene-coated metal balls between the surface of the die pad and semiconductor die;
sintering the conductive material using an infrared laser; and
depositing an encapsulant over the semiconductor die.
15 . The method of claim 14 , further including sintering the conductive material after disposing the semiconductor die on the conductive material.
16 . The method of claim 14 , further including sintering the conductive material for thirty seconds or less.
17 . The method of claim 14 , wherein the semiconductor die includes a light emitting diode.
18 . The method of claim 14 , further including forming a solder bump on the substrate opposite the semiconductor die.
19 . The method of claim 14 , further including depositing the conductive material by jet printing.
20 . A method of making a semiconductor device, comprising:
providing a substrate;
disposing a conductive material over the substrate, wherein the conductive material includes a plurality of graphene-coated metal balls; and
disposing a first semiconductor die over the conductive material, wherein the graphene-coated metal balls are each interconnected as one graphene-coated metal ball of the plurality of graphene-coated metal balls physically contacts another graphene-coated metal ball of the plurality of graphene-coated metal balls within the conductive material to form a continuous thermal conduction path through the graphene-coated metal balls between the surface of the die pad and first semiconductor die.
21 . The method of claim 20 , further including sintering the conductive material using an infrared laser.
22 . The method of claim 21 , further including sintering the conductive material after disposing the first semiconductor die over the conductive material.
23 . The method of claim 21 , further including sintering the conductive material for thirty seconds or less.
24 . The method of claim 20 , wherein the first semiconductor die includes a light emitting diode.
25 . The method of claim 20 , further including:
disposing a second semiconductor die over the conductive material; and
forming a bond wire extending from the first semiconductor die to the second semiconductor die.