Display device using semiconductor light-emitting diodes, and method for manufacturing same
Discussed is a display device that can include a base unit, a data wire and a gate wire arranged in columns and rows, respectively, and on the base unit to intersect each other, a power wire extending in a same direction as the data wire, thin film transistors connected to the data wire and the gate wire, and a semiconductor light-emitting diode electrically connected to the thin film transistors. A pair of residual assembly electrodes overlapping the semiconductor light-emitting diode are also provided.
1 . A display device comprising:
a base unit;
data wires and gate wires arranged in columns and rows, respectively, and on the base unit to intersect each other;
a power wire extending in a same direction as the data wires;
thin film transistors connected to the data wires and the gate wires;
a semiconductor light-emitting diode electrically connected to the thin film transistors; and
a pair of residual assembly electrodes, each residual assembly electrode overlapping the semiconductor light-emitting diode while not overlapping both the data wires and the power wire in a thickness direction of the base unit.
2 . The display device of claim 1 , wherein the pair of residual assembly electrodes includes:
a first residual assembly electrode protruding from a side of the data wires toward the semiconductor light-emitting diode; and
a second residual assembly electrode protruding from a side of the power wire toward the semiconductor light-emitting diode.
3 . The display device of claim 2 , wherein the first residual assembly electrode and the second residual assembly electrode are separated from each other by a gap, and
wherein the semiconductor light-emitting diode overlaps the gap.
4 . The display device of claim 1 , comprising:
a first insulating layer disposed between the pair of residual assembly electrodes and both of the data wires and the power wire;
a second insulating layer disposed between the semiconductor light-emitting diode and the pair of residual assembly electrodes; and
a third insulating layer disposed to cover the semiconductor light-emitting diode.
5 . The display device of claim 4 , wherein the data wires and the power wire each include:
a first portion overlapping the first insulating layer in a thickness direction of the base unit; and
a second portion overlapping the first insulating layer, the second insulating layer, and the third insulating layer in the thickness direction of the base unit.
6 . The display device of claim 5 , wherein the pair of residual assembly electrodes is located closer to the first portion than to the second portion.
7 . The display device of claim 5 , wherein the second insulating layer is disconnected over the second portion, and
wherein the third insulating layer is disconnected over the second portion.
8 . The display device of claim 1 , wherein a parasitic capacitance is not generated between the pair of residual assembly electrodes and both of the data wires and the power wire.
9 . A method for manufacturing a display device, the method comprising:
forming data wires and gate wires arranged in columns and rows, respectively, on a base unit to intersect each other, a power wire extending in a same direction as the data wires, and thin-film transistors connected to the data wires and the gate wires;
forming an assembly electrode to extend in the same direction as the data wires, with an extension overlapping either the data wires or the power wire in a thickness direction of the base unit;
seating a semiconductor light-emitting diode in a preset position by applying a voltage signal to the assembly electrode; and
removing the extension of the assembly electrode.
10 . The method of claim 9 , wherein the base unit includes a pair of residual assembly electrodes which remain after the removal of the extension of the assembly electrode, and
wherein the pair of residual assembly electrodes overlaps the semiconductor light-emitting diode in the thickness direction of the base unit.
11 . The method of claim 10 , wherein the pair of residual assembly electrodes includes:
a first residual assembly electrode protruding toward the semiconductor light-emitting diode on a side of the data wires; and
a second residual assembly electrode protruding toward the semiconductor light-emitting diode on a side of the power wire.
12 . The method of claim 9 , wherein the forming of the data wires and the gate wires includes forming a first insulating layer covering the data wires and the gate wires,
the forming of the assembly electrode includes forming a second insulating layer covering the assembly electrode, and
the seating of the semiconductor light-emitting diode includes seating the semiconductor light-emitting diode in the preset position and then forming a third insulating layer covering the semiconductor light-emitting diode.
13 . The method of claim 12 , wherein the forming of the third insulating layer is carried out after masking an area of overlap between the data wires and the assembly electrode and an area of overlap between the power wire and the assembly electrode.
14 . The method of claim 13 , wherein the removing of the extension includes:
selectively etching the second insulating layer which is formed in the area of overlap between the data wires and the assembly electrode and the area of overlap between the power wire and the assembly electrode; and
etching the extension of the assembly electrode which overlaps either the data wires or the power wire.
15 . The method of claim 9 , further comprising forming a via hole and a connecting electrode to electrically connect the semiconductor light-emitting diode and the thin-film transistors.
16 . The method of claim 15 , wherein the removing of the extension is performed in a process of forming of the via hole and the connecting electrode.
17 . A display device comprising:
a base unit;
data wires and gate wires on the base unit and extending in different directions;
a power wire extending in a same direction as the data wires;
an insulating layer on the data wires and the power wire;
thin film transistors connected to the data wires and the gate wires;
a semiconductor light-emitting element electrically connected to the thin film transistors; and
a pair of residual assembly electrodes on the insulating layer, each residual assembly electrode being an electrode not overlapping both the data wires and the gate wires in a thickness direction of the base unit.
18 . The display device of claim 17 , wherein the pair of residual assembly electrodes includes a first residual assembly electrode and a second residual assembly electrode that are separated from each other, and overlapping with the semiconductor light-emitting element.