IP Library › Granted Patent US 12690323
Granted Patent B2
US 12690323 · App. 18/236,039 · Granted Jul 21, 2026

Organic light emitting diode and organic light emitting device

Inventors: Byung-Gun Ahn (Paju-si, KR); Sung-Min Jo (Paju-si, KR); Myeong-Seon Cho (Paju-si, KR)
Assignee: LG Display Co., Ltd.
H10K50/13H10K50/15H10K50/16H10K50/858
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Quick Facts
Patent No.
US 12690323
App. No.
18/236,039
Granted
Jul 21, 2026
Kind
B2
Abstract

An OLED includes a plurality of emitting parts among which a first emitting part includes an electron transport layer and a second emitting part includes a hole transport layer spaced apart from a second emitting material layer. At least one of the hole transport layer and the electron transport layer may include a high refractive material, so that, an optical location of the OLED may be controlled. The OLED with driving at low power consumption, improved blue light luminous efficiency and white light luminance and a stable viewing angle may be implemented.

Claims (77)

1 . An organic light emitting diode, comprising:

a first electrode;

a second electrode facing the first electrode; and

an emissive layer disposed between the first electrode and the second electrode,

wherein the emissive layer comprises:

a first emitting part disposed between the first electrode and the second electrode;

a second emitting part disposed between the first emitting part and the second electrode;

a third emitting part disposed between the second emitting part and the second electrode;

a fourth emitting part disposed between the third emitting part and the second electrode;

a first charge generation layer disposed between the first emitting part and the second emitting part;

a second charge generation layer disposed between the second emitting part and the third emitting part; and

a third charge generation layer disposed between the third emitting part and the fourth emitting part,

wherein the first emitting part comprises:

a first emitting material layer;

a first hole transport layer disposed between the first electrode and the first emitting material layer; and

an electron transport layer disposed between the first emitting material layer and the first charge generation layer,

wherein the second emitting part comprises:

a second emitting material layer;

a second hole transport layer disposed between the second emitting material layer and the first charge generation layer and spaced apart from the second emitting material layer; and

a third hole transport layer disposed between the second emitting material layer and the second hole transport layer, and

wherein at least one of the electron transport layer or the second hole transport layer has a refractive index in a range between 1.9 and 2.1.

2 . The organic light emitting diode of claim 1 , wherein the second hole transport layer has a refractive index in a range between 1.9 and 2.0.

3 . The organic light emitting diode of claim 1 , wherein the second hole transport layer has a thickness in a range between 400 Å and 470 Å.

4 . The organic light emitting diode of claim 1 , wherein the second hole transport layer has a thickness in a range between 420 Å and 450 Å.

5 . The organic light emitting diode of claim 1 , wherein the electron transport layer has a refractive index in a range between 1.9 and 1.95.

6 . The organic light emitting diode of claim 1 , wherein the electron transport layer has a thickness in a range between 650 Å and 800 Å.

7 . The organic light emitting diode of claim 1 , wherein the electron transport layer has a thickness in a range between 700 Å and 750 Å.

8 . The organic light emitting diode of claim 1 , wherein the second hole transport layer and the electron transport layer have a refractive index in a range between 1.9 and 2.0.

9 . The organic light emitting diode of claim 1 , wherein the second hole transport layer has a thickness in a range between 370 Å and 570 Å and the electron transport layer has a thickness in a range between 100 Å and 300 Å.

10 . The organic light emitting diode of claim 1 , wherein the first emitting material layer is a red emitting material layer, the second emitting material layer is a blue emitting material layer, the fourth emitting part comprises a blue emitting material layer, and the third emitting part comprises a green emitting material layer.

11 . An organic light emitting diode, comprising:

a first electrode;

a second electrode facing the first electrode; and

an emissive layer disposed between the first electrode and the second electrode,

wherein the emissive layer comprises:

a first emitting part disposed between the first electrode and the second electrode;

a second emitting part disposed between the first emitting part and the second electrode;

a third emitting part disposed between the second emitting part and the second electrode;

a fourth emitting part disposed between the third emitting part and the second electrode;

a first charge generation layer disposed between the first emitting part and the second emitting part;

a second charge generation layer disposed between the second emitting part and the third emitting part; and

a third charge generation layer disposed between the third emitting part and the fourth emitting part,

wherein the first emitting part comprises:

a hole injection layer disposed between the first electrode and the first charge generation layer;

a first hole transport layer disposed between the hole injection layer and the first charge generation layer;

a red emitting material layer disposed between the first hole transport layer and the first charge generation layer; and

a first electron transport layer disposed between the red emitting material layer and the first charge generation layer,

wherein the second emitting part comprises:

a second hole transport layer disposed between the first charge generation layer and the second charge generation layer;

a third hole transport layer disposed between the second hole transport layer and the second charge generation layer;

a first blue emitting material layer disposed between the third hole transport layer and the second charge generation layer; and

a second electron transport layer disposed between the first blue emitting material layer and the second charge generation layer,

wherein the third emitting part comprises:

a fourth hole transport layer disposed between the second charge generation layer and the third charge generation layer;

a green emitting material layer disposed between the fourth hole transport layer and the third charge generation layer; and

a third electron transport layer disposed between the green emitting material layer and the third charge generation layer,

wherein the fourth emitting part comprises:

a fifth hole transport layer disposed between the third charge generation layer and the second electrode;

a sixth hole transport layer disposed between the fifth hole transport layer and the second electrode;

a second blue emitting material layer disposed between the sixth hole transport layer and the second electrode;

a fourth electron transport layer disposed between the second blue emitting material layer and the second electrode; and

an electron injection layer disposed between the fourth electron transport layer and the second electrode, and

wherein at least one of the first electron transport layer or the second hole transport layer has a refractive index in a range between 1.9 and 2.1.

12 . The organic light emitting diode of claim 11 , wherein the second hole transport layer has a refractive index in a range between 1.9 and 2.0.

13 . The organic light emitting diode of claim 11 , wherein the second hole transport layer has a thickness in a range between 400 Å and 470 Å.

14 . The organic light emitting diode of claim 11 , wherein the second hole transport layer has a thickness in a range between 420 Å and 450 Å.

15 . The organic light emitting diode of claim 11 , wherein the first electron transport layer has a refractive index in a range between 1.9 and 1.95.

16 . The organic light emitting diode of claim 11 , wherein the first electron transport layer has a thickness in a range between 650 Å and 800 Å.

17 . The organic light emitting diode of claim 11 , wherein the first electron transport layer has a thickness in a range between 700 Å and 750 Å.

18 . The organic light emitting diode of claim 11 , wherein the second hole transport layer and the first electron transport layer have a refractive index in a range between 1.9 and 2.0.

19 . The organic light emitting diode of claim 11 , wherein the second hole transport layer has a thickness in a range between 370 Å and 570 Å and the first electron transport layer has a thickness in a range between 100 Å and 300 Å.

20 . An organic light emitting device, comprising:

a substrate; and

the organic light emitting diode of claim 1 over the substrate.

21 . An organic light emitting device, comprising:

a substrate; and

the organic light emitting diode of claim 11 over the substrate.