Display device and manufacturing method of display device

1 . A manufacturing method of a display device, comprising:

preparing a processing substrate by forming a lower electrode above a substrate, forming a rib comprising an aperture overlapping the lower electrode, and forming a partition including a lower portion located on the rib and an upper portion located on the lower portion and protruding from a side surface of the lower portion;

forming an organic layer on the lower electrode in the aperture;

forming an upper electrode on the organic layer;

forming a first transparent layer on the upper electrode;

forming a second transparent layer on the first transparent layer;

forming a sealing layer after forming the second transparent layer;

forming a patterned resist on the sealing layer after forming the sealing layer;

removing the sealing layer exposed from the resist by dry etching; and

continuously removing the second transparent layer and the first transparent layer exposed from the resist by ashing, wherein

the first transparent layer and the second transparent layer are formed of organic materials different from each other,

a refractive index of the second transparent layer is less than a refractive index of the first transparent layer,

in the forming the upper electrode, the upper electrode is in direct contact with the side surface of the lower portion of the partition,

in the forming the first transparent layer and the second transparent layer, the first transparent layer and the second transparent layer expose a part of the upper electrode,

in the forming the sealing layer,

the sealing layer covers the second transparent layer on the partition, covers the second transparent layer immediately above the lower electrode and is in contact with the partition, and

the sealing layer is in direct contact with the part of the upper electrode, the dry etching etches the part of the upper electrode after removing the sealing layer, and

an etching rate of the dry etching of the upper electrode is lower than an etching rate of the dry etching of the sealing layer.

2 . The manufacturing method of claim 1 , wherein

the refractive index of the first transparent layer is greater than or equal to 1.7, and

the refractive index of the second transparent layer is less than or equal to 1.6.

3 . The manufacturing method of claim 1 , wherein

a main chain of the organic material for forming the second transparent layer consists of carbon, and the organic material for forming the second transparent layer contains fluorine in a substituent.

4 . The manufacturing method of claim 1 , wherein

the second transparent layer is formed of at least one of polytetrafluoroethylene (PTFE), polyvinylidene fluoride (PVDF) and 2-(perfluorohexyl)ethyl acrylate.

5 . The manufacturing method of claim 1 , wherein

the organic layer, the upper electrode, the first transparent layer and the second transparent layer formed immediately above the upper portion of the partition are spaced apart from the organic layer, the upper electrode, the first transparent layer and the second transparent layer formed immediately above the lower electrode in the aperture.

6 . The manufacturing method of claim 1 , wherein

the sealing layer is formed of an inorganic insulating material, and

a refractive index of the sealing layer is greater than the refractive index of the second transparent layer.

7 . The manufacturing method of claim 1 , further comprising:

removing the upper electrode exposed from the resist by wet etching after the ashing; and

removing the organic layer exposed from the resist by ashing.

8 . The manufacturing method of claim 1 , wherein

the upper electrode is formed of an alloy of magnesium and silver,

the sealing layer is formed of silicon nitride, and

the alloy of magnesium and silver has a higher resistance to the dry etching compared to the silicon nitride.

9 . The manufacturing method of claim 1 , wherein

the dry etching is stopped by the upper electrode.

10 . The manufacturing method of claim 1 , wherein

the upper electrode is an etching stopper layer of the dry etching, and

a progress of the dry etching is stopped in the etching stopper layer.

11 . A manufacturing method of a display device, comprising:

preparing a processing substrate by forming a lower electrode above a substrate, forming a rib comprising an aperture overlapping the lower electrode, and forming a partition including a lower portion located on the rib and an upper portion located on the lower portion and protruding from a side surface of the lower portion;

forming an organic layer on the lower electrode in the aperture;

forming an upper electrode on the organic layer;

forming a first transparent layer on the upper electrode;

forming a second transparent layer on the first transparent layer;

forming a sealing layer after forming the second transparent layer;

forming a patterned resist on the sealing layer after forming the sealing layer;

removing the sealing layer exposed from the resist by dry etching; and

continuously removing the second transparent layer and the first transparent layer exposed from the resist by ashing,

wherein

the first transparent layer and the second transparent layer are formed of organic materials different from each other,

a refractive index of the second transparent layer is less than a refractive index of the first transparent layer,

the sealing layer covers the second transparent layer on the partition, covers the second transparent layer immediately above the lower electrode and is in contact with the partition,

the upper electrode is in direct contact with the side surface of the lower portion of the partition,

a part of the upper electrode is exposed from the first transparent layer and the second transparent layer,

the sealing layer is in direct contact with the part of the upper electrode,

the dry etching etches the part of the upper electrode after removing the sealing layer, and

the upper electrode has a higher resistance to the dry etching compared to the sealing layer.

12 . The manufacturing method of claim 11 , wherein

the upper electrode is formed of an alloy of magnesium and silver,

the sealing layer is formed of silicon nitride, and

the alloy of magnesium and silver has a higher resistance to the dry etching compared to the silicon nitride.

13 . The manufacturing method of claim 11 , wherein

the dry etching is stopped by the upper electrode.

14 . The manufacturing method of claim 11 , wherein

the upper electrode is an etching stopper layer of the dry etching, and

a progress of the dry etching is stopped in the etching stopper layer.

15 . A manufacturing method of a display device, comprising:

preparing a processing substrate by forming a lower electrode above a substrate, forming a rib comprising an aperture overlapping the lower electrode, and forming a partition including a lower portion located on the rib and an upper portion located on the lower portion and protruding from a side surface of the lower portion;

forming an organic layer on the lower electrode in the aperture;

forming an upper electrode on the organic layer;

forming a first transparent layer on the upper electrode;

forming a second transparent layer on the first transparent layer;

forming a sealing layer on the second transparent layer;

forming a patterned resist on the sealing layer;

removing the sealing layer exposed from the resist by dry etching; and

continuously removing the second transparent layer and the first transparent layer exposed from the resist by ashing,

wherein

the first transparent layer and the second transparent layer are formed of organic materials different from each other,

a refractive index of the second transparent layer is less than a refractive index of the first transparent layer,

the upper electrode is in direct contact with the side surface of the lower portion of the partition,

the upper electrode includes a first area and a second area,

the first area of the upper electrode is covered with the first transparent layer and the second transparent layer,

the second area of the upper electrode is not covered with the first transparent layer and the second transparent layer,

the sealing layer is in direct contact with the second transparent layer, the second area of the upper electrode, and the side surface of the lower portion of the partition,

the dry etching etches the second area of the upper electrode after removing the sealing layer, and

the upper electrode has a higher resistance to the dry etching compared to the sealing layer.

16 . The manufacturing method of claim 15 , wherein

the upper electrode is formed of an alloy of magnesium and silver,

the sealing layer is formed of silicon nitride, and

the alloy of magnesium and silver has a higher resistance to the dry etching compared to the silicon nitride.

17 . The manufacturing method of claim 15 , wherein

the dry etching is stopped by the upper electrode.

18 . The manufacturing method of claim 15 , wherein

the upper electrode is an etching stopper layer of the dry etching, and

a progress of the dry etching is stopped in the etching stopper layer.