Display panel and thin film transistor including a control electrode comprising molybdenum, nitrogen and chlorine
A method for manufacturing a display panel is provided, the method including forming a semiconductor pattern on a base layer, applying at least one insulation layer on the semiconductor pattern, and applying a control electrode on the insulation layer so as to overlap at least a portion of the semiconductor pattern. The applying of the control electrode includes depositing molybdenum to form a preliminary electrode layer, forming a photoresist pattern on the preliminary electrode layer, and applying an etching gas to dry-etch the preliminary electrode layer. In an embodiment, in the dry-etching, the etching gas may include a nitrogen trifluoride gas, an oxygen gas, and a chlorine gas. Accordingly, it is possible to implement a manufacturing process of an eco-friendly display panel while increasing the yield and reliability of the display panel manufacturing process.
1 . A display panel comprising:
a base layer;
at least one thin film transistor on the base layer; and
a light emitting element electrically coupled to the at least one thin film transistor,
wherein the at least one thin film transistor comprises:
a first semiconductor pattern on the base layer; and
a first control electrode on the first semiconductor pattern, and overlapping at least a portion of the first semiconductor pattern, and
wherein the first control electrode comprises molybdenum, nitrogen and chlorine.
2 . The display panel of claim 1 , wherein the first control electrode comprises:
an electrode main body part comprising the molybdenum; and
a residue on a surface of the electrode main body part, and comprising the nitrogen and the chlorine.
3 . The display panel of claim 2 , wherein the electrode main body part comprises:
an upper surface parallel to the base layer; and
a side surface extended from the upper surface, and
wherein the residue is on the side surface of the electrode main body part.
4 . The display panel of claim 3 , wherein the residue is not on the upper surface.
5 . The display panel of claim 1 , wherein the first semiconductor pattern comprises an active region, a source region, and a drain region, and
wherein the first control electrode overlaps the active region.
6 . The display panel of claim 1 , further comprising a first insulation layer on the base layer, and covering the first semiconductor pattern,
wherein the first insulation layer is between the first semiconductor pattern and the first control electrode.
7 . The display panel of claim 1 , wherein the first control electrode does not comprise any sulfur.
8 . The display panel of claim 1 , wherein a width of the first control electrode is about 1.5 micrometers to about 2.5 micrometers.
9 . A thin film transistor comprising:
a first semiconductor pattern comprising an active region, a source region, and a drain region;
at least one insulation layer on the first semiconductor pattern; and
a first control electrode on the at least one insulation layer, and overlapping the active region of the first semiconductor pattern, wherein the first control electrode comprises molybdenum, nitrogen and chlorine.
10 . The thin film transistor of claim 9 , wherein the first control electrode comprises:
an electrode main body part comprising the molybdenum; and
a residue on a surface of the electrode main body part, and comprising the nitrogen and the chlorine.