Display device manufacturing method
According to one embodiment, a display device manufacturing method includes preparing a processing substrate including a lower electrode, a rib including and a partition, forming a first organic layer covering the lower electrode, and a second organic layer located on the upper portion, forming a first upper electrode located on the first organic layer and a second upper electrode located on the second organic layer, forming a sealing layer, forming a resist covering a part of the sealing layer, performing anisotropic dry etching using the resist as a mask to reduce a thickness of the sealing layer exposed from the resist, and performing isotropic dry etching using the resist as a mask and using a mixture gas of fluorine-based gas and oxygen to remove the sealing layer exposed from the resist.
1 . A display device manufacturing method comprising:
preparing a processing substrate where a lower electrode, a rib including an aperture overlapping the lower electrode, and a partition including a lower portion arranged on the rib and an upper portion arranged on the lower portion and protruding from a side surface of the lower portion, are formed above a substrate;
simultaneously forming a first organic layer covering the lower electrode, and a second organic layer separated from the first organic layer and located on the upper portion;
simultaneously forming a first upper electrode located on the first organic layer and being in contact with the lower portion, and a second upper electrode separated from the first upper electrode and located on the second organic layer;
forming a sealing layer located above the first upper electrode and the second upper electrode and covering the partition;
forming a resist covering a part of the sealing layer, performing anisotropic dry etching using the resist as a mask to reduce a thickness of the sealing layer exposed from the resist; and
performing isotropic dry etching using the resist as a mask and using a mixture gas of fluorine-based gas and oxygen to remove the sealing layer exposed from the resist,
wherein
the rib is formed on the lower electrode, is in direct contact with the lower electrode, and covers a peripheral portion of the lower electrode,
the lower portion of the partition is formed on the rib and is in direct contact with the rib,
the upper portion of the partition is formed on the lower portion of the partition and is in direct contact with the lower portion of the partition,
the first organic layer is in direct contact with the lower electrode through the aperture,
the second organic layer is in direct contact with the upper portion of the partition,
the first upper electrode is in direct contact with the first organic layer,
the second upper electrode is in direct contact with the second organic layer,
the sealing layer is in direct contact with the lower portion of the partition and the upper portion of the partition,
the lower electrode, the first organic layer and the first upper electrode are stacked in a third direction,
the peripheral portion of the lower electrode is located between the substrate and the rib in the third direction,
the peripheral portion of the lower electrode is closer to the substrate compared to the rib the lower portion of the partition is located between the rib and the upper portion of the partition in the third direction,
the rib is closer to the substrate compared to the upper portion of the partition in the third direction,
the second organic layer is located between the upper portion of the partition and the second upper electrode in the third direction,
the upper portion of the partition is closer to the substrate compared to the second upper electrode in the third direction,
the second upper electrode is located between the second organic layer and the sealing layer in the third direction,
the second organic layer is closer to the substrate compared to the sealing layer in the third direction,
a first cap layer located between the first upper electrode and the sealing layer in the third direction, and a second cap layer separated from the first cap layer and located between the second upper electrode and the sealing layer in the third direction are formed,
the first cap layer is in direct contact with the first upper electrode and the sealing layer, and
the second cap layer is in direct contact with the second upper electrode and the sealing layer.
2 . The method of claim 1 , wherein
the first organic layer and the second organic layer include light emitting layers formed of a same material.
3 . The method of claim 1 , wherein
the sealing layer is formed of a silicon nitride.
4 . The method of claim 3 , wherein
the sealing layer is formed at a temperature lower than or equal to 120° C.
5 . The method of claim 1 , wherein
an etching reactive gas for performing the anisotropic dry etching does not contain oxygen.
6 . The method of claim 1 , wherein
a mixture ratio of fluorine-based gas to oxygen in the mixed gas is in the range of 80:20 to 60:40 at fluorine-based gas:oxygen (volume ratio).
7 . The method of claim 1 , wherein
a processing time of the isotropic dry etching is shorter than a processing time of the anisotropic dry etching.
8 . The method of claim 1 , wherein
the first cap layer and the second cap layer are etching stopper layers for the isotropic dry etching.
9 . The method of claim 1 , further comprising:
after removing the sealing layer, performing etching using the resist as a mask to remove a part of the second cap layer, a part of the second upper electrode, and a part of the second organic layer.
10 . The method of claim 1 , wherein
the lower electrode, the first organic layer and the first upper electrode are stacked in a third direction, and
a width of the upper portion of the partition in a first direction orthogonal to the third direction is greater than a width of the lower portion of the partition in the first direction.
11 . The method of claim 10 , wherein
the lower portion of the partition is formed of a conductive material.
12 . The method of claim 11 , wherein
the upper portion of the partition is formed of a conductive material.
13 . The method of claim 10 , wherein
a thickness of the partition in the third direction is greater than a thickness of the rib in the third direction.
14 . The method of claim 10 , wherein
a thickness of the sealing layer in the third direction between the upper portion of the partition and the resist is greater than a thickness of the lower portion of the partition in the third direction.