Light-emitting device and electronic apparatus including the same

1 . A light-emitting device comprising:

a first electrode;

a second electrode facing the first electrode; and

an interlayer arranged between the first electrode and the second electrode and comprising an emission layer, wherein

the interlayer comprises a contact layer, the contact layer consisting of:

an electron-transporting host; and

a hole-transporting host,

the contact layer is in direct contact with the emission layer, and

the emission layer comprises a first dopant and a second dopant,

wherein an amount of the electron-transporting host in the contact layer is in a range of about 55 wt % to about 85 wt % based on 100 wt % of a total amount of the electron-transporting host and the hole-transporting host, and

wherein the interlayer further comprises an electron transport layer, and the contact layer and the electron transport layer are in direct contact with each other.

2 . The light-emitting device of claim 1 , wherein

the first electrode is an anode,

the second electrode is a cathode, and

the interlayer further comprises a hole transport region arranged between the first electrode and the emission layer and comprising a hole injection layer, a hole transport layer, or any combination thereof.

3 . The light-emitting device of claim 1 , wherein

the first electrode is an anode,

the second electrode is a cathode, and

the interlayer further comprises an electron transport region arranged between the second electrode and the emission layer and comprising an electron transport layer, an electron injection layer, or any combination thereof.

4 . The light-emitting device of claim 1 , wherein the emission layer is configured to emit blue light.

5 . The light-emitting device of claim 1 , wherein the electron-transporting host and the hole-transporting host each have a T 1 energy level of greater than 2.8 eV.

6 . The light-emitting device of claim 1 , wherein

the contact layer comprises a first layer and a second layer,

the interlayer further comprises the electron transport layer and a hole transport layer,

the first layer comprises an electron-transporting host and a hole-transporting host, and the hole-transporting host is greater in amount than that of the electron-transporting host,

the second layer comprises an electron-transporting host and a hole-transporting host, and the electron-transporting host is greater in amount than that of the hole-transporting host,

the first layer is in direct contact with the hole transport layer, and

the second layer is in direct contact with the electron transport layer.

7 . The light-emitting device of claim 1 , wherein one of the first dopant or the second dopant is a phosphorescent dopant, and the other of the first dopant or the second dopant is a fluorescent dopant.

8 . The light-emitting device of claim 1 , wherein in one of the first dopant or the second dopant, intersystem crossing occurs more frequently than emission of light.

9 . The light-emitting device of claim 1 , wherein one of the first dopant or the second dopant is a phosphorescent dopant, and the other of the first dopant or the second dopant is a fluorescent dopant, and in the phosphorescent dopant, intersystem crossing occurs more frequently than emission of light.

10 . The light-emitting device of claim 7 , wherein the fluorescent dopant is a thermally activated delayed fluorescence dopant.

11 . The light-emitting device of claim 1 , wherein the hole-transporting host is one of compounds HT-01 to HT-17:

12 . The light-emitting device of claim 1 , wherein the electron-transporting host is one of compounds ET-01 to ET-015:

13 . The light-emitting device of claim 7 , wherein the phosphorescent dopant is one of compounds 1 to 120:

14 . The light-emitting device of claim 7 , wherein the fluorescent dopant is one of compounds D-01 to D-52:

15 . An electronic apparatus comprising the light-emitting device of claim 1 .

16 . The electronic apparatus of claim 15 , further comprising a thin-film transistor,

wherein the thin-film transistor comprises a source electrode and a drain electrode, and

the first electrode of the light-emitting device is electrically connected to the source electrode or the drain electrode.