Apparatus and method for processing substrate

1 . A system for processing a substrate, the system comprising:

a substrate rotator configured to rotate a seated substrate in a spinning manner;

a chemical solution supplier configured to supply a chemical solution to the substrate;

a chemical solution discharge line configured to discharge the chemical solution having undergone a process to an outside;

a chemical solution circulation line configured to circulate the chemical solution having undergone the process to the chemical solution supplier; and

a discharged chemical solution selector configured to discharge a chemical solution containing a first amount of process by-products to the outside through the chemical solution discharge line and to circulate a chemical solution containing a second amount of process by-products through the chemical solution circulation line;

wherein the first amount of process by-products is larger than the second amount of process by-products; and

wherein the chemical solution circulation line comprises:

an etchant replenishment line allowing etchant to be replenished therethrough;

a deionized water replenishment line allowing deionized water to be replenished therethrough;

a first tank configured to firstly store a collected chemical solution, the replenished etchant, and the replenished deionized water;

a first transport line configured to transport the chemical solution stored in the first tank with a first pump and correct a temperature of the chemical solution with a first heater during transport;

a second tank configured to secondly store the chemical solution;

a second transport line configured to transport the chemical solution stored in the second tank with a second pump and correct the temperature of the chemical solution with a second heater during transport;

a third tank configured to thirdly store the chemical solution; and

a third transport line configured to transport the chemical solution stored in the third tank with a third pump, correct the temperature of the chemical solution with a third heater during transport, and circulate the chemical solution to the chemical solution supplier.

2 . The system of claim 1 , wherein the process comprises a first process and a second process,

wherein the discharged chemical solution selector is a direction control valve configured to discharge, in a chemical solution discharge mode, the chemical solution containing the first amount of process by-products from the first process to the outside through the chemical solution discharge line,

wherein the discharged chemical solution selector is a direction control valve configured to circulate, in a chemical solution circulation mode, the chemical solution containing the second amount of process by-products from the second process through the chemical solution circulation line.

3 . The system of claim 2 , wherein the direction control valve is a three-way valve configured to allow, in the first process, an input side connected to a chemical solution collection line to communicate with the chemical solution discharge line and to allow, in the second process, the input side to communicate with the chemical solution circulation line.

4 . The system of claim 2 , further comprising:

a controller configured to apply a chemical solution discharge control signal to the direction control valve in the first process and a chemical solution circulation control signal to the direction control valve in the second process.

5 . The system of claim 3 , wherein the first process comprises:

an initial etching process of discharging a chemical solution onto the rotating substrate through a nozzle of the chemical solution supply device supplier positioned over a center of the substrate; or

a pre-rinse process of discharging a rinse solution onto the substrate through the nozzle,

wherein the second process comprises:

a first intermediate etching process of discharging the chemical solution onto the rotating substrate while the nozzle moves in a scanning manner from a position over the center of the substrate to a position over an edge of the substrate; and

a second intermediate etching process,

wherein, in the second intermediate etching process, the nozzle moves away from an area over the substrate and the substrate continues to rotate.

6 . The system of claim 5 , wherein, in the initial etching process, the substrate is rotated at a first rotational speed for a first time,

wherein, in the first intermediate etching process, the substrate is rotated at a second rotational speed higher than the first rotational speed for a second time,

wherein, in the second intermediate etching process, the substrate is rotated at a third rotational speed lower than the first rotational speed for a third time.

7 . The system of claim 4 , wherein the controller determines a rotational speed of the substrate and applies a chemical solution discharge control signal or a chemical solution circulation control signal to the direction control valve.

8 . The system of claim 4 , wherein the controller determines which process is currently in progress and applies the chemical solution discharge control signal or the chemical solution circulation control signal to the direction control valve.

9 . The system of claim 1 , wherein the discharged chemical solution selector comprises:

a first collection basin configured to be elevated up to a first height by an elevator;

a first chemical solution collection line connected to the first collection basin;

a second collection basin disposed on an outer side of the first collection basin, the second collection basin being configured to be elevated up to a second height greater than the first height by the elevator;

a second chemical solution collection line connected to the second collection basin;

a third collection basin disposed on an outer side of the second collection basin, the third collection basin being configured to be elevated up to a third height greater than the second height by the elevator; and

a third chemical solution collection line connected to the third collection basin.

10 . The system of claim 9 , wherein the discharged chemical solution selector further comprises:

a controller configured to apply an elevation control signal to the elevator to raise and lower the first collection basin, the second collection basin, and the third collection basin according to the process such that the chemical solution containing the first amount of process by-products is discharged to the outside through the chemical solution discharge line, and the chemical solution containing the second amount of process by-products is circulated through the chemical solution circulation line.

11 . An A system for processing a substrate, the system comprising:

a substrate rotator configured to rotate a seated substrate in a spinning manner;

a chemical solution supplier configured to supply a chemical solution to the substrate;

a chemical solution discharge line configured to discharge the chemical solution having undergone a process to an outside;

a chemical solution circulation line configured to circulate the chemical solution having undergone the process to the chemical solution supplier; and

a discharged chemical solution selector configured to discharge a chemical solution containing a first amount of process by-products to the outside through the chemical solution discharge line and to circulate a chemical solution containing a second amount of process by-products through the chemical solution circulation line, wherein the first amount of process by-products is larger than the second amount of process by-products,

wherein the discharged chemical solution selector is a direction control valve configured to discharge, in a chemical solution discharge mode, the chemical solution containing first amount of process by-products from a first process to the outside through the chemical solution discharge line and to circulate, in a chemical solution circulation mode, the chemical solution containing the second amount of process by-products from a second process through the chemical solution circulation line,

the system further comprising:

a controller configured to apply a chemical solution discharge control signal to the direction control valve in the first process and a chemical solution circulation control signal to the direction control valve in the second process,

wherein the first process comprises:

an initial etching process of discharging a chemical solution onto the rotating substrate through a nozzle of the chemical solution supplier positioned over a center of a substrate,

wherein the second process comprises:

a first intermediate etching process of discharging the chemical solution onto the rotating substrate while the nozzle moves in a scanning manner from a position over the center of the substrate to a position over an edge of the substrate; and

a second intermediate etching process,

wherein, in the second intermediate etching process, the nozzle moves away from an area over the substrate and the substrate continues to rotate,

wherein the discharged chemical solution selector comprises:

a first collection basin configured to be elevated up to a first height by an elevator;

a first chemical solution collection line connected to the first collection basin;

a second collection basin disposed on an outer side of the first collection basin, the second collection basin being configured to be elevated up to a second height greater than the first height by the elevator;

a second chemical solution collection line connected to the second collection basin;

a third collection basin disposed on an outer side of the second collection basin, the third collection basin being configured to be elevated up to a third height greater than the second height by the elevating device elevator; and

a third chemical solution collection line connected to the third collection basin,

wherein the controller is configured to apply an elevation control signal to the elevator to raise and lower the first collection basin, the second collection basin, and the third collection basin according to the process such that the chemical solution containing the first amount of process by-products is discharged to the outside through the chemical solution discharge line, and the chemical solution containing the second amount of process by-products is circulated through the chemical solution circulation line,

wherein the chemical solution circulation line comprises:

an etchant replenishment line allowing etchant to be replenished therethrough;

a deionized water replenishment line allowing deionized water to be replenished therethrough;

a first tank configured to firstly store a collected chemical solution, replenished etchant, and replenished deionized water;

a first transport line configured to transport the chemical solution stored in the first tank with a first pump and correct a temperature of the chemical solution with a first heater during transport;

a second tank configured to secondly store the chemical solution;

a second transport line configured to transport the chemical solution stored in the second tank with a second pump and correct the temperature of the chemical solution with a second heater during transport;

a third tank configured to thirdly store the chemical solution; and

a third transport line configured to transport the chemical solution stored in the third tank with a third pump, correct the temperature of the chemical solution with a third heater during transport, and circulate the chemical solution to the chemical solution supplier.