Methods and apparatus for processing a substrate
Methods and apparatus for processing a substrate are provided herein. For example, a processing volume for processing a substrate and a pressure system in fluid communication with the processing volume and comprising a throttle valve assembly including a housing, a sensing device disposed in an interior of the housing, and a fan open to the interior of the housing, wherein, during operation of the pressure system to control a pressure within the processing volume, the sensing device is responsive to temperature changes in the interior of the housing such that the fan remains off when a temperature of the interior of the housing is less than a predetermined temperature and automatically turns on when the temperature within interior of the housing is equal to or greater than the predetermined temperature.
1 . A processing chamber, comprising:
a processing volume for processing a substrate; and
a pressure system in fluid communication with the processing volume and comprising a throttle valve assembly including a housing, a sensor disposed in an interior of the housing, and a fan open to the interior of the housing,
wherein, during operation of the pressure system to control a pressure within the processing volume, the sensor is responsive to temperature changes in the interior of the housing such that the fan remains off when a temperature of the interior of the housing is less than a predetermined temperature and automatically turns on when the temperature within interior of the housing is equal to or greater than the predetermined temperature.
2 . The processing chamber of claim 1 , wherein the sensor is at least one of a thermocouple or a thermistor.
3 . The processing chamber of claim 2 , wherein the thermistor is a negative temperature coefficient thermistor.
4 . The processing chamber of claim 1 , further comprising a throttle controller configured to control an on-off switching of a throttle valve of the throttle valve assembly and control a current applied to the fan to control a speed of the fan when the temperature within interior of the housing is equal to or greater than the predetermined temperature.
5 . The processing chamber of claim 1 , wherein the fan is open to the interior of the housing via an aperture defined therethrough.
6 . The processing chamber of claim 1 , wherein the fan is open to the interior of the housing via a plurality of apertures defined therethrough.
7 . The processing chamber of claim 1 , wherein the predetermined temperature is about 30° C. to about 50° C.
8 . The processing chamber of claim 1 , wherein the predetermined temperature is less than 30° C.
9 . The processing chamber of claim 1 , wherein the processing chamber is a chemical vapor deposition chamber configured to fabricate a field effect transistor (FET) on the substrate.
10 . The processing chamber of claim 9 , wherein the field effect transistor is a 7 nm FinFET.
11 . A pressure system configured for use with a processing chamber, comprising:
a throttle valve assembly including a housing, a sensor disposed in an interior of the housing, and a fan open to the interior of the housing,
wherein, during operation of the pressure system to control a pressure within a processing volume, the sensor is responsive to temperature changes in the interior of the housing such that the fan remains off when a temperature of the interior of the housing is less than a predetermined temperature and automatically turns on when the temperature within interior of the housing is equal to or greater than the predetermined temperature.
12 . The pressure system of claim 11 , wherein the sensor is at least one of a thermocouple or a thermistor.
13 . The pressure system of claim 12 , wherein the thermistor is a negative temperature coefficient thermistor.
14 . The pressure system of claim 11 , further comprising a throttle controller configured to control an on-off switching of a throttle valve of the throttle valve assembly and control a current applied to the fan to control a speed of the fan when the temperature within interior of the housing is equal to or greater than the predetermined temperature.
15 . The pressure system of claim 11 , wherein the fan is open to the interior of the housing via an aperture defined therethrough.
16 . The pressure system of claim 11 , wherein the fan is open to the interior of the housing via a plurality of apertures defined therethrough.
17 . The pressure system of claim 11 , wherein the predetermined temperature is about 30° C. to about 50° C.
18 . The pressure system of claim 11 , wherein the predetermined temperature is less than 30° C.
19 . The pressure system of claim 11 , wherein the pressure system is configured for use with a chemical vapor deposition chamber configured to fabricate a field effect transistor (FET) on a substrate.