Method of manufacturing a semiconductor device by filling mask- defined trenches with an insulating film
A method for manufacturing a semiconductor device includes: forming a mask film such that it covers part of a first trench, thereby dividing the first trench in the longitudinal direction to form one or more second trenches; filling a first insulating film into the second trenches; removing the mask film; and forming a second insulating film such that it covers the entire first trench.
1 . A method for manufacturing a semiconductor device, comprising:
forming a mask film to cover part of a first trench, thereby dividing the first trench in the longitudinal direction to form one or more second trenches;
filling a first insulating film into the one or more second trenches;
removing the mask film; and
forming a second insulating film to cover the entire first trench,
wherein the mask film is formed such that a length of a first side of the mask film, the first side constituting a contour of each second trench and the first side extending in a width direction of the first trench, is equal to or larger than a length of a second side of the mask film, the second film constituting the contour of each second trench and extending in the longitudinal direction of the first trench.
2 . The method for manufacturing a semiconductor device according to claim 1 , wherein at least one of the first insulating film and the second insulating film is formed by an atomic layer deposition (ALD) process.
3 . The method for manufacturing a semiconductor device according to claim 1 , wherein the mask film includes a resin.
4 . The method for manufacturing a semiconductor device according to claim 1 , wherein at least one of the first insulating film and the second insulating film is formed by a chemical vapor deposition process.
5 . The method for manufacturing a semiconductor device according to claim 1 , wherein at least one of the first insulating film and the second insulating film is formed of silicon oxide material.
6 . The method for manufacturing a semiconductor device according to claim 1 , wherein at least one of the first insulating film and the second insulating film is formed of TEOS (tetra-ethyl ortho-silicate).
7 . A method for manufacturing a semiconductor device, comprising:
forming a multi-layer stack wherein first insulating layers and second insulating layers are alternately stacked one by one;
forming a first trench in the multi-layer stack;
forming a mask film to cover part of the first trench, thereby dividing the first trench in the longitudinal direction to form one or more second trenches;
filling a first insulating film into the one or more second trenches;
removing the mask film; and
forming a second insulating film to cover the entire first trench,
wherein the mask film is formed such that a length of a first side of the mask film, the first side constituting a contour of each second trench and the first side extending in a width direction of the first trench, is equal to or larger than a length of a second side of the mask film, the second film constituting the contour of each second trench and extending in the longitudinal direction of the first trench.
8 . The method for manufacturing a semiconductor device according to claim 7 , wherein after forming the multi-layer stack, heat treating the semiconductor device.
9 . The method for manufacturing a semiconductor device according to claim 7 , further comprising forming pillars in the multi-layer stack.