Semiconductor device and method of manufacturing the same
A semiconductor device includes a first element disposed in a first region and including a high-dielectric-constant insulating film, a second element disposed in a second region, and an element isolation portion disposed between the first region and the second region and electrically isolating between the first element and the second element. A step portion is formed on the surface of the element isolation portion. The semiconductor device further includes a dummy pattern that straddles the step portion. The dummy pattern includes a first high-dielectric-constant insulating film and a conductive film covering the upper surface of the first high-dielectric-constant insulating film. The first high-dielectric-constant insulating film is exposed from both side surfaces of the dummy pattern. The semiconductor device further includes a sidewall insulating film covering the first high-dielectric-constant insulating film exposed from both side surfaces of the dummy pattern.
1 . A semiconductor device comprising:
a first element disposed in a first region and including a first high-dielectric-constant insulating film;
a second element disposed in a second region; and
an element isolation portion disposed between the first region and the second region, the element isolation portion electrically isolating between the first element and the second element,
wherein a step portion is formed on a surface of the element isolation portion,
wherein the semiconductor device comprises a dummy pattern straddling the step portion,
wherein the dummy pattern includes:
the first high-dielectric-constant insulating film; and
a conductive film covering an upper surface of the first high-dielectric-constant insulating film,
wherein the first high-dielectric-constant insulating film is exposed from both side surfaces of the dummy pattern, and
wherein the semiconductor device comprises a sidewall insulating film covering the first high-dielectric-constant insulating film exposed from the both side surfaces of the dummy pattern.
2 . The semiconductor device according to claim 1 ,
wherein a step height of the step portion is greater than a film thickness of the first high-dielectric-constant insulating film.
3 . The semiconductor device according to claim 1 ,
wherein the step portion is configured by:
a step surface;
a first terrace surface located on a side of the first region with respect to the step surface; and
a second terrace surface located on a side of the second region with respect to the step surface,
wherein each of the step surface, the first terrace surface and the second terrace surface is formed on the element isolation portion.
4 . The semiconductor device according to claim 1 ,
wherein the step portion is configured by:
a step surface;
a first terrace surface located on a side of the first region with respect to the step surface; and
a second terrace surface located on a side of the second region with respect to the step surface,
wherein the first terrace surface and the step surface are formed on a semiconductor region adjacent to the element isolation portion in the first region, and
wherein the second terrace surface is formed on the element isolation portion.
5 . The semiconductor device according to claim 1 , comprising:
a semiconductor substrate having a main surface and a trench disposed on the main surface; and
an insulating film filling the trench of the semiconductor substrate,
wherein the element isolation portion is configured by the trench and the insulating film.
6 . The semiconductor device according to claim 1 ,
wherein the second element is configured so as not to include an insulating film having high-dielectric-constant.
7 . The semiconductor device according to claim 1 ,
wherein the second element includes:
a second high-dielectric-constant insulating film; and
an insulating film located under the second high-dielectric-constant insulating film.
8 . The semiconductor device according to claim 1 ,
wherein a material configuring the first high-dielectric-constant insulating film has a dielectric constant higher than a dielectric constant of silicon nitride.
9 . The semiconductor device according to claim 1 ,
wherein the first high-dielectric-constant insulating film includes:
a dielectric layer formed of a material having a dielectric constant higher than a dielectric constant of silicon nitride; and
a fine metal particle dispersed in the dielectric layer.
10 . The semiconductor device according to claim 9 ,
wherein the dielectric layer includes a first metal, and
wherein the fine metal particle is configured by a second metal different from the first metal.