Semiconductor package

1 . A semiconductor package, comprising:

a package substrate having upper and lower surfaces opposing each other, and including a redistribution layer, a lower protective layer, and a plurality of support protrusions, wherein the redistribution layer has first and second pads disposed on the lower surface of the package substrate, wherein the lower protective layer has first openings and a trench, wherein the first openings expose at least a portion of each of the first pads, wherein the trench exposes the second pads, and wherein the plurality of support protrusions are disposed in the trench;

a semiconductor chip disposed on the upper surface of the package substrate and including connection pads electrically connected to the redistribution layer;

an encapsulant disposed on at least a portion of the semiconductor chip;

first connection bumps disposed in the first openings of the lower protective layer, respectively, and electrically connected to the first pads, respectively,

a passive device disposed in the trench of the lower protective layer and electrically connected to the second pads; and

a sealant covering at least a portion of the passive device and extending into the trench,

wherein at least one of the plurality of support protrusions overlaps the passive device in a direction substantially perpendicular to the lower surface of the package substrate.

2 . The semiconductor package of claim 1 , further comprising:

bump structures connecting the second pads to connection terminals of the passive device.

3 . The semiconductor package of claim 2 , wherein each of a first distance that is between the plurality of support protrusions and a second distance that is between the plurality of support protrusions and the bump structures are substantially equal to or greater than a spacing distance between the bump structures.

4 . The semiconductor package of claim 3 , wherein each of the first distance and the second distance is in a range of about 10 μm to about 200 μm.

5 . The semiconductor package of claim 1 , wherein the trench has a sidewall surrounding the second pads.

6 . The semiconductor package of claim 5 , wherein the sealant fills a space between the sidewall of the trench and the second pads.

7 . The semiconductor package of claim 5 , wherein the plurality of support protrusions are spaced apart from the sidewall of the trench by a third distance.

8 . The semiconductor package of claim 7 , wherein the third distance is in a range of about 10 μm to about 200 μm.

9 . The semiconductor package of claim 1 , wherein the plurality of support protrusions have a cylindrical shape extending perpendicularly from the lower surface of the package substrate.

10 . The semiconductor package of claim 1 , wherein lower surfaces of the plurality of support protrusions are on substantially a same level as a level of a lower surface of the lower protective layer.

11 . The semiconductor package of claim 1 ,

wherein the redistribution layer further includes third pads disposed on the upper surface of the package substrate, and

wherein the package substrate further includes an upper protective layer having second openings exposing at least a portion of each of the third pads.

12 . The semiconductor package of claim 11 , further comprising:

second connection bumps disposed in the second openings of the upper protective layer, respectively, and electrically connecting the connection pads of the semiconductor chip to the third pads, respectively.

13 . The semiconductor package of claim 11 , wherein the trench overlaps the third pads in a direction substantially perpendicular to the lower surface of the package substrate.

14 . A semiconductor package, comprising:

a package substrate having upper and lower surfaces opposing each other, and including a redistribution layer, a lower protective layer, and a plurality of support protrusions, wherein the redistribution layer includes pads disposed on the lower surface, wherein the lower protective layer has a trench exposing the pads, and wherein the plurality of support protrusions are disposed in the trench;

a semiconductor chip disposed on the upper surface of the package substrate and electrically connected to the redistribution layer;

an encapsulant covering at least a portion of the semiconductor chip;

a passive device disposed in the trench of the lower protective layer and including connection terminals facing the lower surface;

bump structures connecting the connection terminals of the passive device to the pads of the redistribution layer, respectively; and

a sealant extending into the trench and at least partially surrounding the plurality of support protrusions and the bump structures,

wherein at least one of the plurality of support protrusions overlaps the passive device in a direction substantially perpendicular to the lower surface of the package substrate.

15 . The semiconductor package of claim 14 , wherein the plurality of support protrusions and the bump structures have a circular shape.

16 . The semiconductor package of claim 15 , wherein a diameter or a width of the plurality of support protrusions is substantially a same as or smaller than a diameter or a width of the bump structures.

17 . The semiconductor package of claim 14 , wherein the bump structures include a pillar portion and a solder portion, wherein the pillar portion is in contact with the connection terminals, and the solder portion is disposed between the pillar portion and the pads.

18 . The semiconductor package of claim 14 , wherein the sealant is in contact with an entirety of a side surface of each of the plurality of support protrusions and the bump structures.

19 . A semiconductor package, comprising:

a package substrate having upper and lower surfaces opposing each other and including a redistribution layer, a lower protective layer, and a plurality of support protrusions, wherein the redistribution layer includes pads disposed on the lower surface, wherein the lower protective layer has a trench exposing the pads, and wherein the plurality of support protrusions are disposed in the trench;

a semiconductor chip disposed on the upper surface of the package substrate and electrically connected to the redistribution layer;

a passive device disposed in the trench of the lower protective layer and electrically connected to the pads; and

a sealant covering at least a portion of the passive device and disposed in the trench,

wherein the plurality of support protrusions include at least one first support protrusion and at least one second support protrusion, wherein the at least one first support protrusion overlaps the passive device in a direction substantially perpendicular to the lower surface of the package substrate, and the at least one second support protrusion does not overlap the passive device.

20 . The semiconductor package of claim 19 ,

wherein the trench has an extension area adjacent to one side of the passive device, and

wherein the at least one second support protrusion is disposed within the extension area.