Semiconductor package

1 . A semiconductor package comprising:

a die paddle;

a first lead spaced apart from the die paddle and on one side of the die paddle;

a second lead spaced apart from the die paddle and on another side of the die paddle;

a spacer on the die paddle;

a semiconductor die on the spacer;

a first wire configured to connect an upper surface of the semiconductor die to the first lead; and

a mold film configured to cover the die paddle, the first lead, the second lead, the spacer, the semiconductor die, and the first wire,

wherein a first width of the spacer is greater than a second width of the die paddle so that the spacer overlaps the first lead, and

wherein when a first length between the die paddle and the first lead is A and a second length of a portion of the spacer overlapping the first lead is B, 1/5≤B/A≤1/2 is satisfied.

2 . The semiconductor package of claim 1 , further comprising:

a second wire configured to connect the upper surface of the semiconductor die to the second lead,

wherein the spacer overlaps the second lead.

3 . The semiconductor package of claim 1 , further comprising:

an adhesive layer on a lower surface of the spacer and the spacer is attached to the die paddle and the first lead by the adhesive layer.

4 . The semiconductor package of claim 1 ,

wherein a length of an overlapping portion between the spacer and the first lead is between 10 μm to 3 mm.

5 . The semiconductor package of claim 1 ,

wherein the first wire is in contact with the upper surface of the semiconductor die at a region where the semiconductor die overlaps the spacer.

6 . The semiconductor package of claim 5 ,

wherein a third width of the semiconductor die is greater than the first width of the spacer.

7 . The semiconductor package of claim 1 ,

wherein the first width and the second width are measured in a first direction and a first length of the spacer in a second direction is shorter than a second length of the die paddle in the second direction.

8 . The semiconductor package of claim 1 , wherein:

the die paddle comprises a first side surface and a second side surface that face each other, and a third side surface and a fourth side surface that face each other,

the first lead is spaced apart from the first side surface,

the second lead is spaced apart from the second side surface, and

the semiconductor package further comprises a third lead and a fourth lead that are spaced apart from the third side surface and the fourth side surface, respectively, and face each other.

9 . The semiconductor package of claim 8 ,

wherein the first width and the second width are measured in a first direction and a first length of the spacer in a second direction is longer than a second length of the die paddle in the second direction.

10 . A semiconductor package comprising:

a die paddle;

a first lead spaced apart from the die paddle and on one side of the die paddle;

a second lead spaced apart from the die paddle and on another side of the die paddle;

a spacer on the die paddle;

a semiconductor die on the spacer;

a first wire configured to connect an upper surface of the spacer to the first lead;

a second wire configured to connect an upper surface of the semiconductor die to the first lead; and

a mold film configured to cover the die paddle, the first lead, the spacer, the semiconductor die, the first wire, and the second wire, wherein

the die paddle is apart from the first lead by a first space,

the first wire is in contact with a first region of the spacer that overlaps the first lead, and

the second wire is in contact with a second region of the semiconductor die that overlaps the first space.

11 . A semiconductor package comprising:

a die paddle having a first side surface and a second side surface;

a first lead spaced apart from the first side surface;

a second lead spaced apart from the second side surface that faces the first side surface;

a first semiconductor die attached to an upper surface of the die paddle;

a second semiconductor die attached to an upper surface of the first semiconductor die; and

a mold film configured to cover the die paddle, the first lead, the second lead, the first semiconductor die, and the second semiconductor die,

wherein a first width of the first semiconductor die is greater than a second width of the die paddle so that the first semiconductor die overlaps the first lead,

the first semiconductor die is connected to the first lead through a first wire, and

the second semiconductor die is connected to the first lead through a second wire.

12 . The semiconductor package of claim 11 , wherein:

the first semiconductor die overlaps the second lead,

the first semiconductor die is connected to the second lead through a third wire, and

the second semiconductor die is connected to the second lead through a fourth wire.

13 . The semiconductor package of claim 12 ,

wherein the first wire is connected to the upper surface of the first semiconductor die in a first area where the first semiconductor die overlaps the first lead.

14 . The semiconductor package of claim 13 ,

wherein the third wire is connected to the upper surface of the first semiconductor die in a second area where the first semiconductor die overlaps the second lead.

15 . The semiconductor package of claim 12 ,

wherein a third width of the second semiconductor die is greater than the second width of the die paddle.

16 . The semiconductor package of claim 12 ,

wherein the die paddle has a third side surface and a fourth side surface that face each other and the semiconductor package further comprises a third lead spaced apart from the third side surface and a fourth lead spaced apart from the fourth side surface.

17 . The semiconductor package of claim 16 ,

wherein the mold film is configured to cover the third lead and the fourth lead.

18 . The semiconductor package of claim 16 , wherein:

the first width and the second width are measured in a first direction,

a first length of the first semiconductor die in a second direction is longer than a second length of the die paddle in the second direction so that the first semiconductor die overlaps the third lead,

the first semiconductor die is connected to the third lead through a fifth wire, and

the second semiconductor die is connected to the third lead through a sixth wire.

19 . The semiconductor package of claim 18 , wherein:

the first semiconductor die overlaps the fourth lead,

the first semiconductor die is connected to the fourth lead through a seventh wire, and

the second semiconductor die is connected to the fourth lead through an eighth wire.