Bonding pad structure and method for manufacturing the same

1 . A bonding pad structure, comprising:

a carrier;

a first conductive layer disposed over the carrier;

a second conductive layer disposed on the first conductive layer and contacting the first conductive layer;

a third conductive layer disposed on the second conductive layer and contacting the second conductive layer; and

a first passivation layer disposed on the first conductive layer and contacting at least one of the first conductive layer and the second conductive layer,

wherein an upper surface of the third conductive layer facing away from the carrier is exposed from the first passivation layer;

wherein the third conductive layer is not disposed between the second conductive layer and the first passivation layer;

wherein the first passivation layer contacts the second conductive layer and the third conductive layer;

wherein the first conductive layer, the second conductive layer, and the third conductive layer are stacked on each other to form a ladder shaped configuration; and

wherein the second conductive layer has an upper surface partially covered by the first passivation layer, partially covered by the third conductive layer, and partially exposed between the first passivation layer and the third conductive layer.

2 . The bonding pad structure of claim 1 , wherein the first conductive layer, the second conductive layer, and the third conductive layer have materials different from one another, and wherein a width of the first conductive layer is greater than a width of the second conductive layer which is greater than a width of the third conductive layer to form the ladder shaped configuration.

3 . The bonding pad structure of claim 2 , wherein the first conductive layer comprises a copper-containing layer, the second conductive layer comprises a nickel-containing layer, and the third conductive layer comprises a gold-containing layer.

4 . The bonding pad structure of claim 1 , wherein the third conductive layer is spaced apart from the first passivation layer by a gap between about 1.0 micrometers (μm) and about 3.0 μm.

5 . The bonding pad structure of claim 1 , wherein a width of the third conductive layer is between about 40.0 μm and about 60.0 μm.

6 . The bonding pad structure of claim 1 , further comprising:

a conductive bump disposed on the third conductive layer,

wherein the conductive bump comprises a gold bump.

7 . The bonding pad structure of claim 1 , further comprising:

a conductive pad disposed over the carrier; and

a dielectric layer disposed over the carrier and covering the conductive pad,

wherein the first conductive layer penetrates the dielectric layer to contact the conductive pad.

8 . The bonding pad structure of claim 1 , wherein the third conductive layer is physically separated from the first passivation layer, and a lateral surface of the third conductive layer is spaced apart from a lateral surface of the second conductive layer, such that the lateral surface of the third conductive layer is uncovered by and exposed from the first passivation layer.

9 . The bonding pad structure of claim 1 , wherein the first passivation layer contacts a lateral surface of the third conductive layer, and the second conductive layer is not exposed from the first passivation layer.

10 . The bonding pad structure of claim 1 , further comprising:

a second passivation layer disposed between the third conductive layer and the first passivation layer,

wherein the first conductive layer is physically separated from the first passivation layer by the second conductive layer.

11 . The bonding pad structure of claim 1 , wherein the second conductive layer is physically separated from the first passivation layer, and a lateral surface of the third conductive layer and a lateral surface of the second conductive layer are substantially coplanar.