Semiconductor device and method for producing semiconductor device

1 . A semiconductor device comprising:

a frame body having a wall surface;

an insulating substrate surrounded by the frame body, the insulating substrate having a first metal layer and a second metal layer on a surface, the second metal layer being located between the first metal layer and the wall surface;

a semiconductor chip including an electrode and provided on the first metal layer; and

a bonding wire having a first wire connected to the electrode, a second wire connected to the second metal layer, and an intermediate wire between the first wire and the second wire,

wherein, viewing from a direction perpendicular to the surface of the insulating substrate, a second angle formed between a second direction in which the second wire extends and the wall surface is smaller than a first angle formed between a first direction in which the intermediate wire extends and the wall surface.

2 . The semiconductor device according to claim 1 , wherein a difference between the first angle and the second angle is 10 degrees or more and 90 degrees or less.

3 . The semiconductor device according to claim 1 , wherein the semiconductor chip is a metal oxide semiconductor field effect transistor or an insulated gate bipolar transistor; and the electrode is a gate electrode pad.

4 . The semiconductor device according to claim 1 , wherein when the bonding wire is formed, the first wire is formed before the second wire.

5 . A method for producing a semiconductor device, the method comprising:

preparing an insulating substrate surrounded by a frame body having a wall surface, the insulating substrate having a first metal layer and a second metal layer on a surface, the second metal layer being located between the first metal layer and the wall surface;

disposing a semiconductor chip including an electrode on the first metal layer;

forming a first wire of a bonding wire on the electrode;

forming an intermediate wire of the bonding wire, the intermediate wire extending in a first direction; and

forming a second wire of the bonding wire on the second metal layer, the second wire extending in a second direction,

wherein, viewing from a direction perpendicular to the surface of the insulating substrate, a second angle formed between the second direction and the wall surface is smaller than a first angle formed between the first direction and the wall surface.

6 . The method for producing a semiconductor device according to claim 5 , wherein

the bonding wire is formed by a wedge bonding apparatus having a bonding head,

the bonding head is moved in the first direction in the forming the intermediate wire, and

the bonding head is moved in the second direction after the forming the second wire.

7 . The method for producing a semiconductor device according to claim 5 , wherein an angle formed between the first direction and the second direction is 10 degrees or more and 45 degrees or less.

8 . The method for producing a semiconductor device according to claim 5 , wherein an angle formed between the first direction and the second direction is 20 degrees or more and 45 degrees or less.

9 . The method for producing a semiconductor device according to claim 6 , wherein the bonding head is rotated in a plane horizontal to a surface of the second metal layer before the forming the second wire.

10 . The method for producing a semiconductor device according to claim 5 , wherein the semiconductor chip is a metal oxide semiconductor field effect transistor or an insulated gate bipolar transistor; and the electrode is a gate electrode pad.

11 . The semiconductor device according to claim 1 , wherein a difference between the first angle and the second angle is 20 degrees or more and 45 degrees or less.

12 . The semiconductor device according to claim 1 , wherein the second angle is 60 degrees or more and 80 degrees or less.

13 . A semiconductor device comprising:

a frame body having a wall surface;

an insulating substrate surrounded by the frame body, the insulating substrate having a first metal layer and a second metal layer on a surface, the second metal layer being located between the first metal layer and the wall surface;

a semiconductor chip including an electrode and provided on the first metal layer; and

a bonding wire having a first wire connected to the electrode, a second wire connected to the second metal layer, and an intermediate wire between the first wire and the second wire, the second wire including a first end and a second end, the first end being connected to the intermediate wire, the second end being opposite to the first end, both the first and second ends being in contact with the second metal layer,

wherein, a distance between the first and second ends along a first direction that extends from the first end to the second end is greater than a distance between the first and second ends along a second direction perpendicular to the wall surface.

14 . The semiconductor device according to claim 13 , wherein viewing from a direction perpendicular to the surface of the insulating substrate, a first angle formed between the first direction and the wall surface is smaller than a second angle formed between a third direction in which the intermediate wire extends and the wall surface, and a difference between the first angle and the second angle is 10 degrees or more and 90 degrees or less.

15 . The semiconductor device according to claim 14 , wherein a difference between the first angle and the second angle is 20 degrees or more and 45 degrees or less.

16 . The semiconductor device according to claim 13 , wherein the semiconductor chip is a metal oxide semiconductor field effect transistor or an insulated gate bipolar transistor; and the electrode is a gate electrode pad.

17 . The semiconductor device according to claim 13 , wherein when the bonding wire is formed, the first wire is formed before the second wire.

18 . The semiconductor device according to claim 13 , wherein the second angle is 60 degrees or more and 80 degrees or less.